2D planar field emission devices based on individual ZnO nanowires

Qing Zhao,ChengKuang Huang,Rui Zhu,Jun Xu,Li Chen,Dapeng Yu
DOI: https://doi.org/10.1016/j.ssc.2011.08.010
IF: 1.934
2011-01-01
Solid State Communications
Abstract:2D planar field emission devices based on individual ZnO nanowires were achieved on Si/SiO2 substrate via a standard e-beam lithography method. The anode, cathode and ZnO nanowires were on the same substrate; so the electron field emission is changed to 2D. Using e-beam lithography, the emitter (cathode) to anode distance could be precisely controlled. Real time, in situ observation of the planar field emission was realized in a scanning electron microscope. For individual ZnO nanowires, an onset voltage of 200 V was obtained at 1 nA. This innovative approach provides a viable and practical methodology to directly implement into the integrated field emission electrical devices for achieving “on-chip” fabrication.
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