Precisely-controlled Fabrication of Single ZnO Nanoemitter Arrays and Their Possible Application in Low Energy Parallel Electron Beam Exposure.

H. He,J. C. She,Y. F. Huang,S. Z. Deng,N. S. Xu
DOI: https://doi.org/10.1039/c2nr11636g
IF: 6.7
2012-01-01
Nanoscale
Abstract:Precisely-controlled fabrication of single ZnO nanoemitter arrays and their possible application in low energy parallel electron beam exposure are reported. A well defined polymethyl methacrylate (PMMA) nanohole template was employed for local solution-phase growth of single ZnO nanoemitter arrays. Chlorine plasma etching for surface smoothing and pulsed-laser illumination in nitrogen for nitrogen doping were performed, which can significantly enhance the electron emission and improve the emitter-to-emitter uniformity in performance. Mechanisms responsible for the field emission enhancing effect are proposed. Low voltage (368 V) e-beam exposure was performed by using a ZnO nanoemitter array and a periodical hole pattern (0.72-1.26 μm in diameter) was produced on a thin (25 nm) PMMA. The work demonstrates the feasibility of utilizing single ZnO nano-field emitter arrays for low voltage parallel electron beam lithography.
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