Zno Nanowire Field Electron Emitters

Juncong She,Tao Cao,Shaozhi Deng,Jun Chen,Ningsheng Xu

DOI: https://doi.org/10.1109/ivnc.2015.7225564

2015-01-01

Abstract:This talk gives an overview on the precisely-controlled fabrication, optimization of the field electron emission performance, and the potential application of the zinc oxide nanoemitter arrays. The related nanofabrication methods, material and device physics are discussed.

What problem does this paper attempt to address?

Precisely-controlled Fabrication of Single ZnO Nanoemitter Arrays and Their Possible Application in Low Energy Parallel Electron Beam Exposure.

H. He,J. C. She,Y. F. Huang,S. Z. Deng,N. S. Xu

DOI: https://doi.org/10.1039/c2nr11636g

IF: 6.7

2012-01-01

Nanoscale

Abstract:Precisely-controlled fabrication of single ZnO nanoemitter arrays and their possible application in low energy parallel electron beam exposure are reported. A well defined polymethyl methacrylate (PMMA) nanohole template was employed for local solution-phase growth of single ZnO nanoemitter arrays. Chlorine plasma etching for surface smoothing and pulsed-laser illumination in nitrogen for nitrogen doping were performed, which can significantly enhance the electron emission and improve the emitter-to-emitter uniformity in performance. Mechanisms responsible for the field emission enhancing effect are proposed. Low voltage (368 V) e-beam exposure was performed by using a ZnO nanoemitter array and a periodical hole pattern (0.72-1.26 μm in diameter) was produced on a thin (25 nm) PMMA. The work demonstrates the feasibility of utilizing single ZnO nano-field emitter arrays for low voltage parallel electron beam lithography.
ZnO Nanowire Field Emitter Arrays: Fabrication, Field Emission Mechanism and Applications

Jun Chen,Zhipeng Zhang,Guofu Zhang,Long Zhao,Yicong Chen,Juncong She,Shaozhi Deng,Ningsheng Xu

DOI: https://doi.org/10.1364/pfe.2015.pt1e.2

2015-01-01

Abstract:ZnO nanowires with good field emission properties were prepared by a non-catalyst thermal oxidization method. The study of temperature dependent field emission shows that the defects play an important role in the field emission process. Addressable field emitter arrays using ZnO nanowires were fabricated and applied in a display device. Good gate-controlled characteristics and the display of video images are realized. The results demonstrate that feasibility of large area ZnO nanowire field emitter arrays.
Field Emission from Oxide Nanowires: Mechanism and Applications

Jun Chen,Yicong Chen,Zhufan Lin,Long Zhao,Daokun Chen,Kun Wang,Zhipeng Zhang,Guofu Zhang,Juncong She,Shaozhi Deng,Ningsheng Xu

DOI: https://doi.org/10.1109/ivnc.2018.8520166

2018-01-01

Abstract:In this invited talk, our recent progresses in the research of field emission from several oxide nanowires and their applications in vacuum microelectronic devices will be reviewed. Field emission properties from of CuO, $WO_{3-x}$ and ZnO nanowires were studied and their field emission mechanism were discussed. Applications of nanowire field emitter in gated field emitter, flat panel x-ray source and imaging detector were explored. Prototype of flat panel X-ray source using ZnO nanowire field emitters was fabricated and its high resolution imaging capability was demonstrated. The feasibility of a large area high-sensitive detector using ZnO nanowire field emitters is also verified.
Fabrication Of Zno Nanowire Field Emitter Arrays For Field Emission Display Application

K. Huang,Y. L. Ke,G. F. Zhang,Jun Chen,S. Z. Deng,N. S. Xu

2011-01-01

Abstract:ZnO nanowire field emitter arrays were fabricated for field emission display application by combining a microfabrication and self-assembly processes. The ZnO nanowires were synthesized without catalyst by thermal oxidation of zinc thin film. In order to improve its performance and fabrication compatibility with device structure, the effects of oxidation temperature and film deposition method were studied. The characteristics of the ZnO nanowire field emitter arrays in a fully-sealed 3.5 inch field emission device will be presented.
Stable, Self-Ballasting Field Emission from Zinc Oxide Nanowires Grown on an Array of Vertically Aligned Carbon Nanofibers

C. Li,Y. Zhang,M. Mann,P. Hiralal,H. E. Unalan,W. Lei,B. P. Wang,D. P. Chu,D. Pribat,G. A. J. Amaratunga,W. I. Milne

DOI: https://doi.org/10.1063/1.3380597

IF: 4

2010-01-01

Applied Physics Letters

Abstract:A structure composed of zinc oxide nanowires (ZNWs) grown hydrothermally on an array of vertically aligned carbon nanofibers (CNFs) was fabricated and its field emission properties determined and compared with bare CNF arrays. The combination produced a macroscopic turn-on field of 1.2 V/μm which was found to be the lowest reported from ZNWs deposited on a two-dimensional substrate and much less than the equivalent CNFs array (5.2 V/μm). Crucially, field emission was found to be much more stable at higher pressures of 5×10−6 mbar without exhibiting current degradation for a fixed external field, while emitting with a current density of 1 mA/cm2, the current density typically required for backlighting and field emission displays. We propose a self-ballasting mechanism, in which the low carrier density in the zinc oxide prevents current runaway in the presence of adsorbed species.
Fabrication of ZnO Nanowire Field Emitter Arrays with Self-Aligned Focus Electrode Structure

Yuanming Liu,Long Zhao,Zhipeng Zhang,Daokun Chen,Guofu Zhang,Juncong She,Shaozhi Deng,Ningsheng Xu,Jun Chen

DOI: https://doi.org/10.1109/ivnc.2016.7551525

2016-01-01

Abstract:ZnO nanowire field emitter arrays with self-aligned focus electrode were designed. The simulation of the electron trajectory verified the focusing characteristics of designed structure. The ZnO nanowire field emitter arrays were successfully fabricated and the addressing operation was realized.
Fabrication and Characterization of Gated ZnO Nanowire Field Electron Emitters

Laitang Luo,Juncong She,Shaozhi Deng,Jun Chen,Ningsheng Xu

DOI: https://doi.org/10.1109/ivnc.2016.7551526

2016-01-01

Abstract:Nanofabrication procedure was developed to obtain uniform zinc oxide (ZnO) nanowire arrays. The geometric uniformity of the nanowire and the surface smoothness were improved by optimizing the fabrication processes. Array of gated ZnO nano-emitter was fabricated to realize the low driving voltage triode structure.
Fabrication of ZnO Nanowires by Vapor-Phase Deposition and Their Field Emission Properties

Zhang Qifeng,Rong Yi,Chen Xianxiang,Zhang Gengmin,Zhang Zhaoxiang,Xue Zengquan,Chen Changqi,Wu Jinlei

DOI: https://doi.org/10.3969/j.issn.1674-4926.2006.07.014

2006-01-01

Chinese Journal of Semiconductors

Abstract:Unoriented ZnO nanowires are fabricated either on the surface of silicon wafer or at the tip of needle-like tungsten by vapor-phase deposition.Both the plane field emission and tip field emission of ZnO nanowires are studied using a field emission microscope.The results show that for unoriented ZnO nanowire thin films,the electric field intensities corresponding to the turn-on voltage and threshold voltage of field emission are 4.7 and 7.6V/μm,which are much lower than those of aligned nanowire arrays.The enhancement of the field emission ability is attributed to the fact that the field-induced screening effect can be effectively avoided due to the widely spaced intervals that exist between the unoriented nanowires.The field emission of the tungsten tip also can be effectively improved by assembling ZnO nanowires on the tip,which presents a potential application of ZnO nanowire on the probe of electron microscopes with ultrahigh resolution.
Field Emission from Zinc Oxide Nanostructures and Its Degradation

Jing Xiao,Gengmin Zhang,Xin Bai,Ligang Yu,Xingyu Zhao,Dengzhu Guo

DOI: https://doi.org/10.1016/j.vacuum.2008.07.005

IF: 4

2008-01-01

Vacuum

Abstract:Arrays of zinc oxide (ZnO) nanowires and nanobelts were synthesized by the thermal evaporation of mixed powders of ZnO and graphite. Neither catalyst nor vacuum environment was involved in the fabrication. For comparison, the ZnO nanowires were grown on a pre-deposited transitional ZnO film on a brass substrate and the ZnO nanobelts were grown directly on a Si substrate. Their field emission properties were systematically measured. Current density of 10μA/cm2 was achieved at the fields of 5.7 and 6.2V/μm from the nanowires and nanobelts, respectively. Also, the emission sites were found to distribute uniformly on the whole cathode. In the preliminary test on the stability, the ZnO nanobelts, which were sharp at the tip but wide at the root, exhibited better robustness than the ZnO nanowires. The post-test scanning electron microscopy (SEM) observation showed that the degradation of their field emission capability resulted from the breaking of the nanowires, which was tentatively attributed to the resistive heating during the field emission. In contrast, the shedding of the ZnO from the substrate was not so serious as imagined.
Fabrication of Large-Area ZnO Nanowire Field Emitter Arrays by Thermal Oxidation for High-Current Application

Libin Wang,Yangyang Zhao,Keshuang Zheng,Juncong She,Shaozhi Deng,Ningsheng Xu,Jun Chen

DOI: https://doi.org/10.1016/j.apsusc.2019.04.169

IF: 6.7

2019-01-01

Applied Surface Science

Abstract:Large-area ZnO nanowire field emitter arrays have important applications in flat-panel displays, light sources, photodetectors and X-ray sources, where it is crucial to realize a high field emission current and current density over a large-area. In this paper, large-area ZnO nanowire arrays with various array spacings were prepared by the thermal oxidation technique from patterned Zn film arrays, and their field emission properties were studied. The results show that the Zn array density is related to the nanowire length and population density. A mechanism is proposed wherein the stress-induced process and mass transport process both play key roles in the growth. Herein, ZnO nanowire arrays in a 4.7 x 4.7 cm(2) area exhibited a sufficient quantity of emission sites and diminished field screening effect and a high current of 12.9 mA with a current density of 0.58 mA/cm(2). This work provides useful guidance for optimizing ZnO nanowires and enhancing field emission current performance for large-area ZnO nanowire field emission devices.
Field Emission Properties of Zinc Oxide Nanowires Fabricated by Thermal Evaporation

Weiwei Wang,Gengmin Zhang,Ligang Yu,Xin Bai,Zhaoxiang Zhang,Xingyu Zhao

DOI: https://doi.org/10.1016/j.physe.2006.08.008

2007-01-01

Abstract:Arrays of randomly oriented zinc oxide (ZnO) nanowires were fabricated on silicon wafers via a simple thermal evaporation method. During the fabrication, the temperature around the substrate was below 500°C. The products were analyzed by conventional means and determined to be single crystals of wurtzite-type ZnO that grew along the c-axis. These nanowires were 10–100nm in diameter and 10–100μm in length, suggesting a possible high field enhancement factor. The dependence of the field emission current on the anode–cathode voltage (I–V behavior) of the ZnO nanowire arrays was measured in a lab-built ultrahigh vacuum system with a base pressure of 10−7Pa. After surface cleaning by heat treatment, two characteristic electric fields, under which 10μA/cm2 and 1mA/cm2 current densities were extracted, were measured to be 4.0 and 4.7V/μm, respectively. As observed with a transparent anode, emission occurred uniformly over the whole sample surface. A 72h-long test on emission stability was performed under a constant voltage of 2.75kV. The current dropped occasionally to approximately 80% of the initial value during the test owing to the poor adherence of the nanowires to the substrate. These preliminary results have shown the perspective of, as well as a major drawback to, a ZnO nanowire array being developed into a cold electron source to be used in future electronic devices.
Optimizing the Field Emission Properties of ZnO Nanowire Arrays by Precisely Tuning the Population Density and Application in Large-Area Gated Field Emitter Arrays.

Yufeng Li,Zhipeng Zhang,Guofu Zhang,Long Zhao,Shaozhi Deng,Ningsheng Xu,Jun Chen

DOI: https://doi.org/10.1021/acsami.6b13994

IF: 9.5

2017-01-01

ACS Applied Materials & Interfaces

Abstract:Zinc oxide (ZnO) nanowires are prepared for application in large area gated field emitter arrays (FEAs). By oxidizing Al-coated Zn films, the population density of the ZnO nanowires was tuned precisely by varying the thickness of the Al film. The nanowire density decreased linearly as the thickness of the Al film increased. Optimal field emission properties with a turn-on field of 6.21 V μm and current fluctuations less than 1% are obtained. This can be explained by the minimized screening effect and good electrical conductivity of the back-contact layer. The mechanism responsible for the linear variation in the nanowire density is investigated in detail. Addressable FEAs using the optimal ZnO nanowire cathodes were fabricated and applied in a display device. Good gate-controlled characteristics and the display of video images are realized. The results indicate that ZnO nanowires could be applied in large area FEAs.
Field Emission from Nonaligned Zinc Oxide Nanowires

GM Zhang,QF Zhang,Y Pei,LA Chen

DOI: https://doi.org/10.1016/j.vacuum.2004.06.005

IF: 4

2004-01-01

Vacuum

Abstract:Zinc oxide (ZnO) nanowires with an average diameter of 15nm were grown using a vapor phase transport process. Field emission was achieved from these nanowires in spite of their random orientation. The electric field for the extraction of a 10μA/cm2 current density was measured to range from 4.4 to 5.0V/μm, and that for a 1mA/cm2 current density from 7.6 to 8.7V/μm, depending on whether the sample was submitted to a heat treatment. The results exhibit the potential application of ZnO nanowires as field emitters in future flat panel displays.
Controlled Synthesis and Field Emission Properties of Zno Nanostructures with Different Morphologies

YH Huang,Y Zhang,L Liu,SS Fan,Y Wei,J He

DOI: https://doi.org/10.1166/jnn.2006.086

2006-01-01

Journal of Nanoscience and Nanotechnology

Abstract:By simply controlling atmosphere, rods, tetraleg-rods, and arrays of ZnO nanostructures have been fabricated respectively through pure zinc powder evaporation without catalyst at temperature of 650 - 700 degrees C. Investigations through HRTEM and XRD showed that the growth of the synthesized ZnO nanostructures was controlled by vapor-solid mechanism. Field emission measurements revealed that all of the structures, owing to their very low turn-on voltage, sufficient emission current and proper linearity of 1/V - Ln(l/V2), are likely to be potential candidates as a field emitter. The results also indicated that field emission properties are relative to morphology and size of the tips of ZnO nanostructures, and the nanorods with sharp tips possess the first-class FE property.
Field Emission Properties of ZnO Nanowire Array Directly Grown from Zinc Substrate

L. H. Cai,J. Chen,S. M. Zhang,S. Z. Deng,J. C. She,N. S. Xu

DOI: https://doi.org/10.1109/ivnc.2007.4480967

2007-01-01

Abstract:ZnO nanowires were grown by direct oxidation of ZnO substrate. The field emission from ZnO nanowire has been studied. The obtained results indicated that the ZnO nanowire has good field emission properties.
ZnO Nanowire and $\hbox{ws}_{2}$ Nanotube Electronics

Husnu Emrah Unalan,Yang,Yan Zhang,Pritesh Hiralal,Daniel Kuo,Sharvari Dalal,Tim Butler,Seung Nam Cha,Jae Eun Jang,Konstantina Chremmou,Georgios Lentaris,Di Wei,Rital Rosentsveig,Kenichi Suzuki,Hidetoshi Matsumoto,Mie Minagawa,Yasuhiko Hayashi,Manish Chhowalla,Akihiko Tanioka,William I. Milne,Reshef Tenne,Gehan A. J. Amaratunga

DOI: https://doi.org/10.1109/ted.2008.2005166

IF: 3.1

2008-01-01

IEEE Transactions on Electron Devices

Abstract:In this paper, we report on the synthesis and applications of semiconducting nanostructures. Nanostructures of interest were zinc oxide (ZnO) nanowires and tungsten disulfide (WS2) nanotubes where transistors/phototransistors and photovoltaic (PV) energy conversion cells have been fabricated. ZnO nanowires were grown with both high- and low-temperature approaches, depending on the application. Individual ZnO nanowire side-gated transistors revealed excellent performance with a field-effect mobility of 928 cm(2)/V . s. ZnO networks were proposed for large-area macroelectronic devices as a less lithographically intense alternative to individual nanowire transistors where mobility values in excess of 20 cm(2)/V . s have been achieved. Flexible PV devices utilizing ZnO nanowires as electron acceptors and for photoinduced charge separation and transport have been presented. Phototransistors were fabricated using individual WS2 nanotubes, where clear sensitivity to visible light has been observed. The results presented here simply reveal the potential use of inorganic nanowires/tubes for various optoelectronic devices.
Preparation of ZnO Nanowires for High Emission Current Field Emitter Arrays

Libing Wang,Long Zhao,Zhipeng Zhang,Juncong She,Shaozhi Deng,Ningsheng Xu,Jun Chen

DOI: https://doi.org/10.1109/ivnc.2017.8051592

2017-01-01

Abstract:ZnO nanowires have potential applications as large area field emitters for plat panel x-ray source and high emission current is needed for such application. In this study, patterned ZnO nanowires with different separations have been fabricated on ITO coated glass substrate by thermal oxidation technique. It is found that the separation of the patterns affects the growth of ZnO nanowires. The field emission characteristics were investigated. The results indicate that by adopting a proper separation, high current density could be achieved.
Fabrication of ZnO Nanowire Field-Emitter Arrays with Focusing Capability

Yuanming Liu,Long Zhao,Zhipeng Zhang,Daokun Chen,Guofu Zhang,Juncong She,Shaozhi Deng,Ningsheng Xu,Jun Chen

DOI: https://doi.org/10.1109/ted.2018.2817290

IF: 3.1

2018-01-01

IEEE Transactions on Electron Devices

Abstract:ZnO nanowire field-emitter arrays (FEAs) show great application potentials in large-area vacuum microelectronics devices. However, the electron divergence is an issue which should be addressed. In this paper, ZnO nanowire FEAs with co-planar focus electrode were designed. A four-mask fabrication process and lift-off process were adopted to achieve the integration of focus electrode. The device demonstrated line-addressing and focusing capability with a spacing of 5 mm between anode and cathode, and the linewidth of field-emission images was reduced from 2.25 to 1.35 mm when the focus voltage changed from 50 to -50 V. Besides, line-shaped emission patterns were observed during focusing process, which was attributed to the emission pattern from the ZnO nanowire and the asymmetrical focusing electrical field.
Recent Progress on ZnO Nanowires Cold Cathode and Its Applications.

Yicong Chen,Shaozhi Deng,Ningsheng Xu,Jun Chen

DOI: https://doi.org/10.3390/nano11082150

2021-01-01

Abstract:A cold cathode has many applications in high frequency and high power electronic devices, X-ray source, vacuum microelectronic devices and vacuum nanoelectronic devices. After decades of exploration on the cold cathode materials, ZnO nanowire has been regarded as one of the most promising candidates, in particular for large area field emitter arrays (FEAs). Numerous works on the fundamental field emission properties of ZnO nanowire, as well as demonstrations of varieties of large area vacuum microelectronic applications, have been reported. Moreover, techniques such as modifying the geometrical structure, surface decoration and element doping were also proposed for optimizing the field emissions. This paper aims to provide a comprehensive review on recent progress on the ZnO nanowire cold cathode and its applications. We will begin with a brief introduction on the synthesis methods and discuss their advantages/disadvantages for cold cathode applications. After that, the field emission properties, mechanism and optimization will be introduced in detail. Then, the development for applications of large-area ZnO nanowire FEAs will also be covered. Finally, some future perspectives are provided.
Efficient field emission from ZnO nanoneedle arrays

Y. W. Zhu,H. Z. Zhang,X. C. Sun,S. Q. Feng,J. Xu,Q. Zhao,B. Xiang,R. M. Wang,D. P. Yu

DOI: https://doi.org/10.1063/1.1589166

IF: 4

2003-07-07

Applied Physics Letters

Abstract:Well-aligned arrays of ZnO nanoneedles were fabricated using a simple vapor phase growth. The diameters of the nanoneedle tips are as small as several nanometers, which is highly in favor of the field emission. Field-emission measurements using the nanoneedle arrays as cathode showed emission current density as high as 2.4 mA/cm2 under the field of 7 V/μm, and a very low turn-on field of 2.4 V/μm. Such a high emission current density is attributed to the high aspect ratio of the nanoneedles. The high emission current density, high stability, and low turn-on field make the ZnO nanoneedle arrays one of the promising candidates for field-emission displays.

physics, applied

Zno Nanowire Field Electron Emitters

Precisely-controlled Fabrication of Single ZnO Nanoemitter Arrays and Their Possible Application in Low Energy Parallel Electron Beam Exposure.

ZnO Nanowire Field Emitter Arrays: Fabrication, Field Emission Mechanism and Applications

Field Emission from Oxide Nanowires: Mechanism and Applications

Fabrication Of Zno Nanowire Field Emitter Arrays For Field Emission Display Application

Stable, Self-Ballasting Field Emission from Zinc Oxide Nanowires Grown on an Array of Vertically Aligned Carbon Nanofibers

Fabrication of ZnO Nanowire Field Emitter Arrays with Self-Aligned Focus Electrode Structure

Fabrication and Characterization of Gated ZnO Nanowire Field Electron Emitters

Fabrication of ZnO Nanowires by Vapor-Phase Deposition and Their Field Emission Properties

Field Emission from Zinc Oxide Nanostructures and Its Degradation

Fabrication of Large-Area ZnO Nanowire Field Emitter Arrays by Thermal Oxidation for High-Current Application

Field Emission Properties of Zinc Oxide Nanowires Fabricated by Thermal Evaporation

Optimizing the Field Emission Properties of ZnO Nanowire Arrays by Precisely Tuning the Population Density and Application in Large-Area Gated Field Emitter Arrays.

Field Emission from Nonaligned Zinc Oxide Nanowires

Controlled Synthesis and Field Emission Properties of Zno Nanostructures with Different Morphologies

Field Emission Properties of ZnO Nanowire Array Directly Grown from Zinc Substrate

ZnO Nanowire and $\hbox{ws}_{2}$ Nanotube Electronics

Preparation of ZnO Nanowires for High Emission Current Field Emitter Arrays

Fabrication of ZnO Nanowire Field-Emitter Arrays with Focusing Capability

Recent Progress on ZnO Nanowires Cold Cathode and Its Applications.

Efficient field emission from ZnO nanoneedle arrays