Field Emission Properties of ZnO Nanowire Array Directly Grown from Zinc Substrate

L. H. Cai,J. Chen,S. M. Zhang,S. Z. Deng,J. C. She,N. S. Xu

DOI: https://doi.org/10.1109/ivnc.2007.4480967

2007-01-01

Abstract:ZnO nanowires were grown by direct oxidation of ZnO substrate. The field emission from ZnO nanowire has been studied. The obtained results indicated that the ZnO nanowire has good field emission properties.

What problem does this paper attempt to address?

Field Emission and Optical Properties of ZnO Nanowires Grown Directly on Conducting Brass Substrates.

Kaifu Huo,Jijiang Fu,Hongwei Ni,Yemin Hu,Guixiang Qian,Paul K. Chu,Zheng Hu

DOI: https://doi.org/10.1166/jnn.2009.ns78

2009-01-01

Journal of Nanoscience and Nanotechnology

Abstract:Large-area and uniform ZnO nanowires have been produced directly on a conducting brass substrate by annealing a Cu0.66Zn0.34 foil under a mixture of argon and oxygen. The morphology, structure, and composition of the ZnO nanowires are characterized by X-ray diffraction, electron microscopy, energy-dispersive X-ray spectrometry, and X-ray photoelectron spectroscopy. The ZnO nanowires with diameters of about 40-70 nm and lengths up to micrometers grow preferentially along the [001] direction. Since the Cu0.66Zn0.34 foil serves as both the Zn source and substrate, the synthesis and assembly of the ZnO nanowires on a conducting substrate is accomplished in one step, and good intrinsic adhesion and robust electrical contact between the ZnO nanowires and conducting substrate are realized. This ZnO configuration forms an ideal field emitter and good field emission properties are corroborated in this study. Photoluminescence studies indicate that these ZnO nanowires have good optical quality exhibiting strong ultraviolet (UV) emission at 383 nm and a weak visible emission band centered around 485 nm at room temperature. The good field emission and optical properties suggest that ZnO nanowires fabricated by this method have promising applications in nano-optoelectronic and field emission devices.
Field Emission from Nonaligned Zinc Oxide Nanowires

GM Zhang,QF Zhang,Y Pei,LA Chen

DOI: https://doi.org/10.1016/j.vacuum.2004.06.005

IF: 4

2004-01-01

Vacuum

Abstract:Zinc oxide (ZnO) nanowires with an average diameter of 15nm were grown using a vapor phase transport process. Field emission was achieved from these nanowires in spite of their random orientation. The electric field for the extraction of a 10μA/cm2 current density was measured to range from 4.4 to 5.0V/μm, and that for a 1mA/cm2 current density from 7.6 to 8.7V/μm, depending on whether the sample was submitted to a heat treatment. The results exhibit the potential application of ZnO nanowires as field emitters in future flat panel displays.
Field Emission from Zinc Oxide Nanowire Arrays Grown Directly from Brass

Jing Xiao,Gengmin Zhang,Xin Bai,Yue Wu,Wei Zhang,Xingyu Zhao,Dengzhu Guo

DOI: https://doi.org/10.1016/j.physe.2008.07.011

IF: 3.369

2008-01-01

Physica E Low-dimensional Systems and Nanostructures

Abstract:Field emission from zinc oxide (ZnO) nanowires grown by directly heating brass substrate in air was systematically studied. The turn-on electric field was measured to be 3.3V/μm and the field emission came uniformly from the entire array. The emission stability was also tested over a period of time of 9 days. The degradation of the field emission was found to have arisen from the breaking of the nanowires. Compared with similar structures grown on Si substrate by thermal evaporation, which were made as a reference, the brass-based ZnO nanowire array appeared to be superior in field emission performance; thus, the importance of the substrate has been confirmed. At the brass–ZnO interface, the downward bending of the energy band of ZnO resulted in a low-resistance Ohmic contact. As a contrast, a large number of nanowires fell off from the Si substrate during the stability test, indicating the difficulty in the electron injection from the substrate to the nanowires. These findings have enhanced the understanding of the failure mechanism of ZnO nanowire emitters and also highlighted the essential importance of the substrate in the field emission from nanomaterials.
ZnO Nanowire Field Emitter Arrays: Fabrication, Field Emission Mechanism and Applications

Jun Chen,Zhipeng Zhang,Guofu Zhang,Long Zhao,Yicong Chen,Juncong She,Shaozhi Deng,Ningsheng Xu

DOI: https://doi.org/10.1364/pfe.2015.pt1e.2

2015-01-01

Abstract:ZnO nanowires with good field emission properties were prepared by a non-catalyst thermal oxidization method. The study of temperature dependent field emission shows that the defects play an important role in the field emission process. Addressable field emitter arrays using ZnO nanowires were fabricated and applied in a display device. Good gate-controlled characteristics and the display of video images are realized. The results demonstrate that feasibility of large area ZnO nanowire field emitter arrays.
Stable, Self-Ballasting Field Emission from Zinc Oxide Nanowires Grown on an Array of Vertically Aligned Carbon Nanofibers

C. Li,Y. Zhang,M. Mann,P. Hiralal,H. E. Unalan,W. Lei,B. P. Wang,D. P. Chu,D. Pribat,G. A. J. Amaratunga,W. I. Milne

DOI: https://doi.org/10.1063/1.3380597

IF: 4

2010-01-01

Applied Physics Letters

Abstract:A structure composed of zinc oxide nanowires (ZNWs) grown hydrothermally on an array of vertically aligned carbon nanofibers (CNFs) was fabricated and its field emission properties determined and compared with bare CNF arrays. The combination produced a macroscopic turn-on field of 1.2 V/μm which was found to be the lowest reported from ZNWs deposited on a two-dimensional substrate and much less than the equivalent CNFs array (5.2 V/μm). Crucially, field emission was found to be much more stable at higher pressures of 5×10−6 mbar without exhibiting current degradation for a fixed external field, while emitting with a current density of 1 mA/cm2, the current density typically required for backlighting and field emission displays. We propose a self-ballasting mechanism, in which the low carrier density in the zinc oxide prevents current runaway in the presence of adsorbed species.
Field Emission from Zinc Oxide Nanostructures and Its Degradation

Jing Xiao,Gengmin Zhang,Xin Bai,Ligang Yu,Xingyu Zhao,Dengzhu Guo

DOI: https://doi.org/10.1016/j.vacuum.2008.07.005

IF: 4

2008-01-01

Vacuum

Abstract:Arrays of zinc oxide (ZnO) nanowires and nanobelts were synthesized by the thermal evaporation of mixed powders of ZnO and graphite. Neither catalyst nor vacuum environment was involved in the fabrication. For comparison, the ZnO nanowires were grown on a pre-deposited transitional ZnO film on a brass substrate and the ZnO nanobelts were grown directly on a Si substrate. Their field emission properties were systematically measured. Current density of 10μA/cm2 was achieved at the fields of 5.7 and 6.2V/μm from the nanowires and nanobelts, respectively. Also, the emission sites were found to distribute uniformly on the whole cathode. In the preliminary test on the stability, the ZnO nanobelts, which were sharp at the tip but wide at the root, exhibited better robustness than the ZnO nanowires. The post-test scanning electron microscopy (SEM) observation showed that the degradation of their field emission capability resulted from the breaking of the nanowires, which was tentatively attributed to the resistive heating during the field emission. In contrast, the shedding of the ZnO from the substrate was not so serious as imagined.
Field Emission Properties of Zinc Oxide Nanowires Fabricated by Thermal Evaporation

Weiwei Wang,Gengmin Zhang,Ligang Yu,Xin Bai,Zhaoxiang Zhang,Xingyu Zhao

DOI: https://doi.org/10.1016/j.physe.2006.08.008

2007-01-01

Abstract:Arrays of randomly oriented zinc oxide (ZnO) nanowires were fabricated on silicon wafers via a simple thermal evaporation method. During the fabrication, the temperature around the substrate was below 500°C. The products were analyzed by conventional means and determined to be single crystals of wurtzite-type ZnO that grew along the c-axis. These nanowires were 10–100nm in diameter and 10–100μm in length, suggesting a possible high field enhancement factor. The dependence of the field emission current on the anode–cathode voltage (I–V behavior) of the ZnO nanowire arrays was measured in a lab-built ultrahigh vacuum system with a base pressure of 10−7Pa. After surface cleaning by heat treatment, two characteristic electric fields, under which 10μA/cm2 and 1mA/cm2 current densities were extracted, were measured to be 4.0 and 4.7V/μm, respectively. As observed with a transparent anode, emission occurred uniformly over the whole sample surface. A 72h-long test on emission stability was performed under a constant voltage of 2.75kV. The current dropped occasionally to approximately 80% of the initial value during the test owing to the poor adherence of the nanowires to the substrate. These preliminary results have shown the perspective of, as well as a major drawback to, a ZnO nanowire array being developed into a cold electron source to be used in future electronic devices.
Fabrication of ZnO Nanowires by Vapor-Phase Deposition and Their Field Emission Properties

Zhang Qifeng,Rong Yi,Chen Xianxiang,Zhang Gengmin,Zhang Zhaoxiang,Xue Zengquan,Chen Changqi,Wu Jinlei

DOI: https://doi.org/10.3969/j.issn.1674-4926.2006.07.014

2006-01-01

Chinese Journal of Semiconductors

Abstract:Unoriented ZnO nanowires are fabricated either on the surface of silicon wafer or at the tip of needle-like tungsten by vapor-phase deposition.Both the plane field emission and tip field emission of ZnO nanowires are studied using a field emission microscope.The results show that for unoriented ZnO nanowire thin films,the electric field intensities corresponding to the turn-on voltage and threshold voltage of field emission are 4.7 and 7.6V/μm,which are much lower than those of aligned nanowire arrays.The enhancement of the field emission ability is attributed to the fact that the field-induced screening effect can be effectively avoided due to the widely spaced intervals that exist between the unoriented nanowires.The field emission of the tungsten tip also can be effectively improved by assembling ZnO nanowires on the tip,which presents a potential application of ZnO nanowire on the probe of electron microscopes with ultrahigh resolution.
Large-Scale Synthesis of Bicrystalline ZnO Nanowire Arrays by Thermal Oxidation of Zinc Film: Growth Mechanism and High-Performance Field Emission

C. X. Zhao,Y. F. Li,J. Zhou,L. Y. Li,S. Z. Deng,N. S. Xu,Jun Chen

DOI: https://doi.org/10.1021/cg400318f

IF: 4.01

2013-01-01

Crystal Growth & Design

Abstract:Understanding the origin crystal nucleation and driving force is critical for the synthesis of one-dimensional nanomaterials with controllable size, morphology, and crystal structure. The growth behavior of ZnO nanowires prepared by thermal oxidation of zinc film is studied. It is found that the grown nanowires have a bicrystalline structure and growth direction significantly different from the commonly observed [0001] direction. On the basis of detailed high resolution morphology and structural analysis, we propose the origin of the initial growth site, as well as the driving force for formation of the bicrystalline structure of aligned ZnO nanowires. The initial zinc film plays an important role in the growth of nanowire. The edge-enhanced oxidation effect of zinc grain initiates the ZnO nanowire nucleation. The strain within the ZnO layer drives and stimulates the nanowire growth. The present study provides insight into the growth mechanism of ZnO nanowires grown from thermal oxidation of zinc film. Field emission measurement results show that the prepared ZnO nanowires have excellent field emission properties. Uniform emission can be obtained and the turn-on field is 7.8 V/mu m. The results indicate that the method is advantageous for large-scale synthesis of ZnO nanowires for field emission applications.
Field emission from Au nanoparticles decorated ZnO nanowires

Keshuang Zheng,Zhipeng Zhang,Xiaojie Li,Juncong She,Shaozhi Deng,Ningsheng Xu,Jun Chen

DOI: https://doi.org/10.1109/ivnc.2018.8520122

2018-01-01

Abstract:ZnO nanowires with Au nanoparticle decoration were prepared. Photoluminescence results reveal quenching of both the band edge and visible emissions of ZnO nanowires after the Au nanoparticle decoration. The field emission properties from Au nanoparticles decorated ZnO nanowires were measured and increasing turn-on fields were observed. The observed phenomena wereattributed to electron transport between ZnO and Au nanoparticle.
Field Emission Characteristics of ZnO Nanowire Driven by Pulsed Voltage

Deyi Huang,Yangyang Zhao,Shuai Wang,Guofu Zhang,Juncong She,Shaozhi Deng,Ningsheng Xu,Jun Chen

DOI: https://doi.org/10.1109/ivnc52431.2021.9600732

2021-01-01

Abstract:The pulsed field emission characteristics of ZnO nanowires were studied. The current response was analysed under pulsed high voltage driving. Emission currents higher than the value obtained under direct current voltage were recorded. The possible mechanism was discussed.
Field Emission Properties of Indium-Doped ZnO Nanowires Prepared on ITO Glass Substrate

Yangyang Zhao,Guofu Zhang,Runze Zhan,Juncong She,Shaozhi Deng,Ningsheng Xu,Jun Chen

DOI: https://doi.org/10.1109/ivnc.2018.8520049

2018-01-01

Abstract:Doping is an important approach for improving the field emission properties of semiconductor nanowire field emitters. The indium-doped zinc oxide nanowires were prepared on ITO glass substrate by thermal oxidation method and field emission properties were measured. The prepared In-doped nanowire arrays shows excellent field emission performance with a turn-on field of 4.0 V/μm and current fluctuation of ~1.4%.
Preparation of ZnO Nanowires for High Emission Current Field Emitter Arrays

Libing Wang,Long Zhao,Zhipeng Zhang,Juncong She,Shaozhi Deng,Ningsheng Xu,Jun Chen

DOI: https://doi.org/10.1109/ivnc.2017.8051592

2017-01-01

Abstract:ZnO nanowires have potential applications as large area field emitters for plat panel x-ray source and high emission current is needed for such application. In this study, patterned ZnO nanowires with different separations have been fabricated on ITO coated glass substrate by thermal oxidation technique. It is found that the separation of the patterns affects the growth of ZnO nanowires. The field emission characteristics were investigated. The results indicate that by adopting a proper separation, high current density could be achieved.
ZnO Nanorod Arrays: Field-assisted Growth in Aqueous Solution and Field Emission Properties

JianBo Yin,GengMin Zhang

DOI: https://doi.org/10.1007/s11431-012-4920-8

2012-01-01

Abstract:ZnO nanorod arrays were fabricated in aqueous solutions under external voltages. The morphology and length of the nanorods could be readily controlled by varying such parameters as the voltage magnitude, growth time, solution concentration and substrate type. The external voltage, which made the adsorption of the Zn2+ cation-containing complexes more possible, modified the growth behavior of the ZnO crystals and played a key role in guaranteeing the orderliness of the arrays. The increase in the nanorod length with the prolonged growth time gradually saturated due to the balance between the growth and the erosion. The ZnO nanorods respectively grown on the Zn and Si substrates differed considerably in both morphology and defect concentration. Field emission was extracted from arrays of nanorods with tapered ends. This field-assisted solution route for fabricating ZnO nanorods featured simplicity in manipulation, inexpensiveness in instrumentation, and effectiveness in controlling the morphology and length.
Efficient field emission from ZnO nanoneedle arrays

Y. W. Zhu,H. Z. Zhang,X. C. Sun,S. Q. Feng,J. Xu,Q. Zhao,B. Xiang,R. M. Wang,D. P. Yu

DOI: https://doi.org/10.1063/1.1589166

IF: 4

2003-07-07

Applied Physics Letters

Abstract:Well-aligned arrays of ZnO nanoneedles were fabricated using a simple vapor phase growth. The diameters of the nanoneedle tips are as small as several nanometers, which is highly in favor of the field emission. Field-emission measurements using the nanoneedle arrays as cathode showed emission current density as high as 2.4 mA/cm2 under the field of 7 V/μm, and a very low turn-on field of 2.4 V/μm. Such a high emission current density is attributed to the high aspect ratio of the nanoneedles. The high emission current density, high stability, and low turn-on field make the ZnO nanoneedle arrays one of the promising candidates for field-emission displays.

physics, applied
Field Emission from Oxide Nanowires: Mechanism and Applications

Jun Chen,Yicong Chen,Zhufan Lin,Long Zhao,Daokun Chen,Kun Wang,Zhipeng Zhang,Guofu Zhang,Juncong She,Shaozhi Deng,Ningsheng Xu

DOI: https://doi.org/10.1109/ivnc.2018.8520166

2018-01-01

Abstract:In this invited talk, our recent progresses in the research of field emission from several oxide nanowires and their applications in vacuum microelectronic devices will be reviewed. Field emission properties from of CuO, $WO_{3-x}$ and ZnO nanowires were studied and their field emission mechanism were discussed. Applications of nanowire field emitter in gated field emitter, flat panel x-ray source and imaging detector were explored. Prototype of flat panel X-ray source using ZnO nanowire field emitters was fabricated and its high resolution imaging capability was demonstrated. The feasibility of a large area high-sensitive detector using ZnO nanowire field emitters is also verified.
Fabrication of Large-Area ZnO Nanowire Field Emitter Arrays by Thermal Oxidation for High-Current Application

Libin Wang,Yangyang Zhao,Keshuang Zheng,Juncong She,Shaozhi Deng,Ningsheng Xu,Jun Chen

DOI: https://doi.org/10.1016/j.apsusc.2019.04.169

IF: 6.7

2019-01-01

Applied Surface Science

Abstract:Large-area ZnO nanowire field emitter arrays have important applications in flat-panel displays, light sources, photodetectors and X-ray sources, where it is crucial to realize a high field emission current and current density over a large-area. In this paper, large-area ZnO nanowire arrays with various array spacings were prepared by the thermal oxidation technique from patterned Zn film arrays, and their field emission properties were studied. The results show that the Zn array density is related to the nanowire length and population density. A mechanism is proposed wherein the stress-induced process and mass transport process both play key roles in the growth. Herein, ZnO nanowire arrays in a 4.7 x 4.7 cm(2) area exhibited a sufficient quantity of emission sites and diminished field screening effect and a high current of 12.9 mA with a current density of 0.58 mA/cm(2). This work provides useful guidance for optimizing ZnO nanowires and enhancing field emission current performance for large-area ZnO nanowire field emission devices.
Field Emission Microscopy Study of Zinc Oxide Nanowires on Tungsten Tip

Xianxiang Zhang,Gengmin Zhang,Xin Bai,Xingyu Zhao,Jing Xiao,Yue Wu,Fengyuan Lu,Dengzhu Guo

DOI: https://doi.org/10.1116/1.3079650

2009-01-01

Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena

Abstract:This article focuses on the field emission from a small number of zinc oxide (ZnO) nanowires. ZnO nanowires were grown directly on W tips and their field emission was studied in a traditional field emission microscope (FEM). The FEM pattern of a single ZnO nanowire was ring shaped, indicating that most of the emission from the (0001) facets of the ZnO nanowires came from their circumferences. Scanning electron microscopy observation, measurement of dependence of the emission current on the applied cathode voltage (I-V behavior), and acquirement of FEM patterns were performed before and after heat treatment of the samples, respectively. The heat treatment was found to play either a favorable or an unfavorable role. It could lead to a stable emission or damage of the emitters, depending on the heating conditions.
Field Emission Properties of Well-Ordered Zno Nanoneedle Arrays

Xiao Jing,Bai Xin,Zhang Geng-Min

DOI: https://doi.org/10.7498/aps.57.7057

IF: 0.906

2008-01-01

Acta Physica Sinica

Abstract:Two kinds of vertically aligned, well-ordered zinc oxide nanoneedle arrays were synthesized on silicon substrates without any catalyst by a simple thermal evaporation method. The nanoneedle arrays have uniform distribution and unique orientation and height. The field emission study shows that both of them have not only low turn-on field and threshold field, but also the ability of stable and long time emission. The low turn-on field and threshold field result from the high aspect ratio and thin apex of the nanoneedles. The stable and long time emission are due to the uniform distribution and good contact between the nanoneedles and the substrate. The results show that regular nanoneedle arrays are ideal candidates for flat panel field emission applications.
Self-Assembled Zns Nanowire Arrays: Synthesis, in Situ Cu Doping and Field Emission

Baodan Liu,Yoshio Bando,Xin Jiang,Chun Li,Xiaosheng Fang,Haibo Zeng,Takeshi Terao,Chengchun Tang,Masanori Mitome,Dmitri Golberg

DOI: https://doi.org/10.1088/0957-4484/21/37/375601

IF: 3.5

2010-01-01

Nanotechnology

Abstract:Well-aligned single-crystalline ZnS nanowire arrays have been grown on highly conductive Cu substrates through controlling the morphology evolution of self-patterned ZnS nanoparticles. The ZnS nanowires have sharp tips with an average size of ∼ 30 nm and a length of ∼ 3 µm. Field emission measurements demonstrated that the aligned ZnS nanowires grown on Cu substrates are excellent field emitters having a turn-on field as low as 2.92 V µm − 1 and a field-enhancement factor as high as 3400. The use of highly conductive metal substrate may promote the commercial applications of ZnS-based emitters in flat panel displays and other optoelectronic devices.

Field Emission Properties of ZnO Nanowire Array Directly Grown from Zinc Substrate

Field Emission and Optical Properties of ZnO Nanowires Grown Directly on Conducting Brass Substrates.

Field Emission from Nonaligned Zinc Oxide Nanowires

Field Emission from Zinc Oxide Nanowire Arrays Grown Directly from Brass

ZnO Nanowire Field Emitter Arrays: Fabrication, Field Emission Mechanism and Applications

Stable, Self-Ballasting Field Emission from Zinc Oxide Nanowires Grown on an Array of Vertically Aligned Carbon Nanofibers

Field Emission from Zinc Oxide Nanostructures and Its Degradation

Field Emission Properties of Zinc Oxide Nanowires Fabricated by Thermal Evaporation

Fabrication of ZnO Nanowires by Vapor-Phase Deposition and Their Field Emission Properties

Large-Scale Synthesis of Bicrystalline ZnO Nanowire Arrays by Thermal Oxidation of Zinc Film: Growth Mechanism and High-Performance Field Emission

Field emission from Au nanoparticles decorated ZnO nanowires

Field Emission Characteristics of ZnO Nanowire Driven by Pulsed Voltage

Field Emission Properties of Indium-Doped ZnO Nanowires Prepared on ITO Glass Substrate

Preparation of ZnO Nanowires for High Emission Current Field Emitter Arrays

ZnO Nanorod Arrays: Field-assisted Growth in Aqueous Solution and Field Emission Properties

Efficient field emission from ZnO nanoneedle arrays

Field Emission from Oxide Nanowires: Mechanism and Applications

Fabrication of Large-Area ZnO Nanowire Field Emitter Arrays by Thermal Oxidation for High-Current Application

Field Emission Microscopy Study of Zinc Oxide Nanowires on Tungsten Tip

Field Emission Properties of Well-Ordered Zno Nanoneedle Arrays

Self-Assembled Zns Nanowire Arrays: Synthesis, in Situ Cu Doping and Field Emission