Abstract:Nanowire field emitters have great potential for use as large-area gated field emitter arrays (FEAs). However, the micrometer-scale cathode patterns in gated FEA devices will reduce regulation of the gate voltage and limit the field emission currents of these devices as a result of field-screening effect among the neighboring nanowires. In this article, a ring-shaped ZnO nanowire pad is proposed to overcome this problem. Diode measurements show that the prepared ring-shaped ZnO nanowire pad arrays shows uniform emission with a turn-on field of 5.9 V/µm and a field emission current density of 4.6 mA/cm2 under an applied field of 9 V/µm. The ZnO nanowire pad arrays were integrated into coplanar-gate FEAs and enhanced gate-controlled device characteristics were obtained. The gate-controlled capability was studied via microscopic in-situ measurements of the field emission from the ZnO nanowires in the coplanar-gate FEAs. Based on the results of both simulations and experiments, we attributed the enhanced gate-controlled device capabilities to more efficient emission of electrons from the ZnO nanowires as a result of the increase edge area by designing ring-shaped ZnO nanowire pad. The results are important to the realization of large-area gate-controlled FEAs based on nanowire emitters for use in vacuum electronic devices.

Fabrication of ZnO Nanowire Field-Emitter Arrays with Focusing Capability

Fabrication of Coaxis-Gated ZnO Nanowire Field-Emitter Arrays With In-Plane Focusing Gate Electrode Structure

Precisely-controlled Fabrication of Single ZnO Nanoemitter Arrays and Their Possible Application in Low Energy Parallel Electron Beam Exposure.

Fabrication of ZnO Nanowire Field Emitter Arrays with Self-Aligned Focus Electrode Structure

Integration of ZnO Nanowires in Gated Field Emitter Arrays for Large-Area Vacuum Microelectronics Applications

Fabrication of ZnO nanowire field emitter arrays with non-coplanar focus electrode structure

Fabrication of Large-Area Arrays of Coaxial Gated ZnO Nanowire Field Emitters for Vacuum Microelectronics Applications

Optimizing the Field Emission Properties of ZnO Nanowire Arrays by Precisely Tuning the Population Density and Application in Large-Area Gated Field Emitter Arrays.

Coplanar-gate ZnO Nanowire Field Emitter Arrays with Enhanced Gate-Control Performance Using a Ring-Shaped Cathode

ZnO Nanowire Field Emitter Arrays: Fabrication, Field Emission Mechanism and Applications

Fabrication Of Zno Nanowire Field Emitter Arrays For Field Emission Display Application

Fabrication of Large-Area ZnO Nanowire Field Emitter Arrays by Thermal Oxidation for High-Current Application

Zno Nanowire Field Electron Emitters

Efficient field emission from ZnO nanoneedle arrays

2D planar field emission devices based on individual ZnO nanowires

Fabrication of Transparent Gated ZnO Nanowire Field Emitter Arrays

Fabrication of ZnO Nanowires by Vapor-Phase Deposition and Their Field Emission Properties

Stable, Self-Ballasting Field Emission from Zinc Oxide Nanowires Grown on an Array of Vertically Aligned Carbon Nanofibers

Fabrication of Gated ZnO Nanowire Field Emitter Arrays for Pulsed Flat Panel X-ray Source

Enhanced Cold Field Emission of Large-area Arrays of Vertically Aligned ZnO-nanotapers Via Sharpening: Experiment and Theory

Highly stable field emission from ZnO nanowire field emitters controlled by an amorphous indium–gallium–zinc-oxide thin film transistor