Abstract:Arrays of randomly oriented zinc oxide (ZnO) nanowires were fabricated on silicon wafers via a simple thermal evaporation method. During the fabrication, the temperature around the substrate was below 500°C. The products were analyzed by conventional means and determined to be single crystals of wurtzite-type ZnO that grew along the c-axis. These nanowires were 10–100nm in diameter and 10–100μm in length, suggesting a possible high field enhancement factor. The dependence of the field emission current on the anode–cathode voltage (I–V behavior) of the ZnO nanowire arrays was measured in a lab-built ultrahigh vacuum system with a base pressure of 10−7Pa. After surface cleaning by heat treatment, two characteristic electric fields, under which 10μA/cm2 and 1mA/cm2 current densities were extracted, were measured to be 4.0 and 4.7V/μm, respectively. As observed with a transparent anode, emission occurred uniformly over the whole sample surface. A 72h-long test on emission stability was performed under a constant voltage of 2.75kV. The current dropped occasionally to approximately 80% of the initial value during the test owing to the poor adherence of the nanowires to the substrate. These preliminary results have shown the perspective of, as well as a major drawback to, a ZnO nanowire array being developed into a cold electron source to be used in future electronic devices.

Highly stable field emission from ZnO nanowire field emitters controlled by an amorphous indium–gallium–zinc-oxide thin film transistor

ZnO Nanowire Field Emitters Integrated with Amorphous Indium-Gallium-Zinc-Oxide Thin Film Transistor

Optimizing the Field Emission Properties of ZnO Nanowire Arrays by Precisely Tuning the Population Density and Application in Large-Area Gated Field Emitter Arrays.

Stable, Self-Ballasting Field Emission from Zinc Oxide Nanowires Grown on an Array of Vertically Aligned Carbon Nanofibers

Fabrication of Amorphous Igzo Thin Film Transistor for Active-Driving of Zno Nanowire Field Emitters

ZnO Nanowire Field Emitter Arrays: Fabrication, Field Emission Mechanism and Applications

Field Emission From a MOSFET-Controlled ZnO-Nanowire Cold Cathode

Integration of ZnO Nanowires in Gated Field Emitter Arrays for Large-Area Vacuum Microelectronics Applications

Synthesis of ZnO Nanowires for Thin Film Network Transistors

Fabrication of Large-Area ZnO Nanowire Field Emitter Arrays by Thermal Oxidation for High-Current Application

Fabrication of Transparent Gated ZnO Nanowire Field Emitter Arrays

Field Emission from Nonaligned Zinc Oxide Nanowires

Zinc Oxide Nanowire Networks for Macroelectronic Devices

Fabrication of ZnO Nanowire Field-Emitter Arrays with Focusing Capability

Crystalline InGaZnO quaternary nanowires with superlattice structure for high-performance thin-film transistors

Efficient field emission from ZnO nanoneedle arrays

Field Emission from Zinc Oxide Nanostructures and Its Degradation

Coplanar-gate ZnO Nanowire Field Emitter Arrays with Enhanced Gate-Control Performance Using a Ring-Shaped Cathode

Field Emission Properties of Indium-Doped ZnO Nanowires Prepared on ITO Glass Substrate

Field Emission Properties of Zinc Oxide Nanowires Fabricated by Thermal Evaporation

Stability of Low Temperature and Transparent Amorphous Ingazno Thin Film Transistor under Illumination