Abstract:Addressable field emitter arrays (FEAs) have important applications in vacuum electronic devices. However, it is important to integrate nanowire emitters into a gated structure without influencing the device structure and maintain the excellent field emission properties of nanowire emitters in the FEAs after the fabrication process. In this study, gate-structure ZnO nanowire FEAs were fabricated by a microfabrication process. The structure combines a planar gate and an under-gate, which is compatible with the preparation of ZnO nanowire emitters. The effect of electrode materials on the field emission properties of ZnO nanowires was studied using a diode structure, and it was found that ZnO nanowire pads on indium-tin-oxide (ITO) electrode showed better field emission performance compared with chromium (Cr) electrode. In addition, effective emission current modulation by the gate voltage was achieved and the addressing capability was demonstrated by integrating the ZnO nanowire FEAs in a vacuum-encapsulated field emission display. The reported technique could be a promising route to achieve large area addressable FEAs.

Fabrication of ZnO Nanowire Field Emitter Arrays with Self-Aligned Focus Electrode Structure

Fabrication of ZnO nanowire field emitter arrays with non-coplanar focus electrode structure

Fabrication of ZnO Nanowire Field-Emitter Arrays with Focusing Capability

Precisely-controlled Fabrication of Single ZnO Nanoemitter Arrays and Their Possible Application in Low Energy Parallel Electron Beam Exposure.

ZnO Nanowire Field Emitter Arrays: Fabrication, Field Emission Mechanism and Applications

Fabrication of Coaxis-Gated ZnO Nanowire Field-Emitter Arrays With In-Plane Focusing Gate Electrode Structure

Fabrication Of Zno Nanowire Field Emitter Arrays For Field Emission Display Application

Optimizing the Field Emission Properties of ZnO Nanowire Arrays by Precisely Tuning the Population Density and Application in Large-Area Gated Field Emitter Arrays.

Zno Nanowire Field Electron Emitters

Fabrication and Characterization of Gated ZnO Nanowire Field Electron Emitters

Integration of ZnO Nanowires in Gated Field Emitter Arrays for Large-Area Vacuum Microelectronics Applications

Fabrication of Large-Area ZnO Nanowire Field Emitter Arrays by Thermal Oxidation for High-Current Application

Stable, Self-Ballasting Field Emission from Zinc Oxide Nanowires Grown on an Array of Vertically Aligned Carbon Nanofibers

Fabrication of Large-Area Arrays of Coaxial Gated ZnO Nanowire Field Emitters for Vacuum Microelectronics Applications

Aligned ZnO Nanorods with Tunable Size and Field Emission on Native Si Substrate Achieved Via Simple Electrodeposition

Zno Nanorod Arrays with Tunable Size and Field Emission Properties on an Ito Substrate Achieved by an Electrodeposition Method

Self-Assembled Zns Nanowire Arrays: Synthesis, in Situ Cu Doping and Field Emission

Arrays of ZnO Nanowires Fabricated by a Simple Chemical Solution Route

Controlled Preparation of Micron-Size-Pattemed ZnO Nanowire Field Emitters

Fabrication of ZnO Nanowires by Vapor-Phase Deposition and Their Field Emission Properties

Preparation of ZnO Nanowires for High Emission Current Field Emitter Arrays