Abstract:Arrays of randomly oriented zinc oxide (ZnO) nanowires were fabricated on silicon wafers via a simple thermal evaporation method. During the fabrication, the temperature around the substrate was below 500°C. The products were analyzed by conventional means and determined to be single crystals of wurtzite-type ZnO that grew along the c-axis. These nanowires were 10–100nm in diameter and 10–100μm in length, suggesting a possible high field enhancement factor. The dependence of the field emission current on the anode–cathode voltage (I–V behavior) of the ZnO nanowire arrays was measured in a lab-built ultrahigh vacuum system with a base pressure of 10−7Pa. After surface cleaning by heat treatment, two characteristic electric fields, under which 10μA/cm2 and 1mA/cm2 current densities were extracted, were measured to be 4.0 and 4.7V/μm, respectively. As observed with a transparent anode, emission occurred uniformly over the whole sample surface. A 72h-long test on emission stability was performed under a constant voltage of 2.75kV. The current dropped occasionally to approximately 80% of the initial value during the test owing to the poor adherence of the nanowires to the substrate. These preliminary results have shown the perspective of, as well as a major drawback to, a ZnO nanowire array being developed into a cold electron source to be used in future electronic devices.

Fabrication of Large-Area Arrays of Coaxial Gated ZnO Nanowire Field Emitters for Vacuum Microelectronics Applications

Integration of ZnO Nanowires in Gated Field Emitter Arrays for Large-Area Vacuum Microelectronics Applications

Fabrication of Coaxis-Gated ZnO Nanowire Field-Emitter Arrays With In-Plane Focusing Gate Electrode Structure

Fabrication of ZnO Nanowire Field-Emitter Arrays with Focusing Capability

Coplanar-gate ZnO Nanowire Field Emitter Arrays with Enhanced Gate-Control Performance Using a Ring-Shaped Cathode

Precisely-controlled Fabrication of Single ZnO Nanoemitter Arrays and Their Possible Application in Low Energy Parallel Electron Beam Exposure.

Fabrication of Gated ZnO Nanowire Field Emitter Arrays for Pulsed Flat Panel X-ray Source

Optimizing the Field Emission Properties of ZnO Nanowire Arrays by Precisely Tuning the Population Density and Application in Large-Area Gated Field Emitter Arrays.

ZnO Nanowire Field Emitter Arrays: Fabrication, Field Emission Mechanism and Applications

Fabrication of Large-Area ZnO Nanowire Field Emitter Arrays by Thermal Oxidation for High-Current Application

Fabrication of Transparent Gated ZnO Nanowire Field Emitter Arrays

Fabrication of ZnO Nanowire Field Emitter Arrays with Self-Aligned Focus Electrode Structure

Fabrication and Characterization of Gated ZnO Nanowire Field Electron Emitters

Fabrication and Field Emission Performance of Arrays of Vacuum Microdiodes Containing CuO Nanowire Emitters Grown Directly on Glass Without a Catalyst

Optimizing Performance of Coaxis Planar-Gated ZnO Nanowire Field-Emitter Arrays by Tuning Pixel Density.

Fabrication Of Zno Nanowire Field Emitter Arrays For Field Emission Display Application

Recent Progress on ZnO Nanowires Cold Cathode and Its Applications.

Preparation of ZnO Nanowires for High Emission Current Field Emitter Arrays

Field Emission from Oxide Nanowires: Mechanism and Applications

Stable, Self-Ballasting Field Emission from Zinc Oxide Nanowires Grown on an Array of Vertically Aligned Carbon Nanofibers

Field Emission Properties of Zinc Oxide Nanowires Fabricated by Thermal Evaporation