Abstract:Electrical characterization of semiconducting oxide nanowires (NWs) is mostly performed using complex techniques, which necessitates a series of costly nanofabrication procedures. In this work, with the aim to provide a low-cost, feasible, facile, and reproducible approach for enabling the study of NW electrical properties, we report direct electrical measurements on individual and overlapped suspended zinc oxide NWs (ZnO NWs). We have succeeded in constructing both two- and three-terminal devices simply by employing tungsten (W) nanoprobes with the aid of a nanomanipulation system embedded inside a scanning electron microscope’s vacuum chamber. Stable contacts were established using the Joule heating effect and e-beam exposure at the junctions between the NW and the pre-cleaned W tips. P-channel field-effect transistor devices were achieved with an on–off current ratio of ∼101, a threshold voltage (>1.5 V), a transconductance of ∼16 μS, a sub-threshold swing of ∼220 mV/decade, and field-effect carrier mobility roughly estimated to be around 926.4 cm2/(V·s) after correction for contact resistances/optimization. The average resistivity of ZnO NWs was calculated to be ∼2.23 × 10–2 Ω·cm for NWs with diameters between 70 and 500 nm. Besides, we have demonstrated a contact resistance of ∼19.60 kΩ and a Schottky barrier height of ∼0.37 eV present at W/ZnO NW interfaces. The contact resistance between two overlapped ZnO NWs was estimated to be ∼283 kΩ, which is relatively higher than that offered between W/ZnO NWs. This work provides a solid experimental procedure to address true intrinsic electrical properties at metal/semiconductor interfaces, and our findings have potential applications in next-generation 3D suspended ZnO NW-based nanoelectronic devices.

Synthesis and Electrical Properties of ZnO Nanowires

Synthesis and electrical properties of ZnO nanowires.

Synthetic and Effect of Annealing on the Luminescent Properties of Zno Nanowire

Synthesis and Electrical Properties of p + -Si/n-ZnO Nanowires Heterojunction

ZnO Nanowire and $\hbox{ws}_{2}$ Nanotube Electronics

Tuning the Electrical Properties of Zno-Si Nano-Contacts and Its Effect on Field Electron Emission from Zno Nanowires

Field Emission and Optical Properties of ZnO Nanowires Grown Directly on Conducting Brass Substrates.

Synthesis of ZnO Nanowires for Thin Film Network Transistors

Synthesis of Well-aligned ZnO Nanowires Using Simple Physical Vapor Deposition Without Catalysts or Additives

Fabrication of ZnO Nanowires by Vapor-Phase Deposition and Their Field Emission Properties

Growth And Characterization Of Cu-Catalyzed Zno Nanowires

Synthesis and Characterization of ZnO Nanowires Using a Simple PVD Approach Without Catalysts

Study on the Structural and Physical Properties of ZnO Nanowire Arrays Grown Via Electrochemical and Hydrothermal Depositions

Low-temperature Growth and Raman Scattering Study of Vertically Aligned ZnO Nanowires on Si Substrate

Electrical Transport And Electroluminescence Properties Of N-Zno Single Nanowires

Electrical and Optical Properties of Single As-Doped Zno Nanowire Field Effect Transistors

Characterization of Electrical Properties of Suspended ZnO Nanowires Using a Nanorobotic Manipulation System Inside a Scanning Electron Microscope for Nanoelectronic Applications

Field Emission and Optical Properties of Ga-doped ZnO Nanowires Synthesized Via Thermal Evaporation

Rational synthesis of p-type zinc oxide nanowire arrays using simple chemical vapor deposition.

Optical and Electrical Properties of Ga-Doped ZnO Nanowire Arrays on Conducting Substrates

P-Type Zns:N Nanowires: Low-Temperature Solvothermal Doping and Optoelectronic Properties