Abstract:Light emission from semiconductors depends not only on the efficiency of carrier injection and recombination but also extraction efficiency. For ultraviolet emission from high band gap materials such as ZnO, nanowires have higher extraction efficiencies than thin films, but conventional approaches for creating a p-n diode result in low efficiency. We exploited the noncentral symmetric nature of n-type ZnO nanowire/p-type GaN substrate to create a piezoelectric ! potential within the nanowire by applying stress. Because of the polarization of ions in a crystal that has noncentral symmetry, a piezoelectric potential (piezopotential) is created in the crystal under stress. The piezopotential acts as a "gate" voltage to tune the charge transport and enhance carrier injection, which is called the piezo-phototronic effect. We propose that band modification traps free carriers at the interface region in a channel created by the local piezoelectric charges. The emission intensity and injection current at a fixed applied voltage have been enhanced by a factor of 17 and 4, respectively, after applying a 0.093% compressive strain and improved conversion efficiency by a factor of 4.25. This huge enhanced performance is suggested arising from an effective increase in the local "biased voltage" as a result of the band modification caused by piezopotential and the trapping of holes at the interface region in a channel created by the local piezoelectric charges near the interface. Our study can be extended from ultraviolet range to visible range for a variety of optoelectronic devices that are important for today's safe, green, and renewable energy technology.

Electrical Transport And Electroluminescence Properties Of N-Zno Single Nanowires

Synthetic and Effect of Annealing on the Luminescent Properties of Zno Nanowire

Enhancing Light Emission of Zno Microwire-Based Diodes by Piezo-Phototronic Effect

Ultraviolet Electroluminescence from In Doped n-ZnO Single-Nanowire/p~+-Si Heterostructures

Electroluminescence from ZnO/n<sup>+</sup>-Si Heterojunction

Microstructure, Wettability and Electrical Properties of N-Zno/zno-sl/p-cu2o Heterojunction

Electroluminescence from ZnO Nanowires with a P-Zno Film/n-Zno Nanowire Homojunction

Ultraviolet Electroluminescence from Zno/P-Si Heterojunctions

Synthesis and electrical properties of ZnO nanowires.

Single ZnO nanowire/p-type GaN heterojunctions for photovoltaic devices and UV light-emitting diodes.

Electroluminescent And Transport Mechanisms Of N-Zno/P-Si Heterojunctions

Electrical and Optical Properties of Single As-Doped Zno Nanowire Field Effect Transistors

Synthesis and Electrical Properties of ZnO Nanowires

Optical and Electrical Performance Of, Sno2 Capped Zno Nanowire Arrays

On-nanowire Spatial Band Gap Design for White Light Emission.

Tuning the Electrical Properties of Zno-Si Nano-Contacts and Its Effect on Field Electron Emission from Zno Nanowires

Fabrication and Electrical Characterization of Nanocrystalline ZnO/Si Heterojunctions

Microphotoluminescence Study Of Individual Suspended Zno Nanowires

Synthesis and Electrical Properties of p + -Si/n-ZnO Nanowires Heterojunction

Electrical properties of Cu doped p-ZnTe nanowires

Electrical And Photoresponse Properties Of An Intramolecular P-N Homojunction In Single Phosphorus-Doped Zno Nanowires