Fabrication and Electrical Characterization of Nanocrystalline ZnO/Si Heterojunctions

Y Zhang,J Xu,BX Lin,ZX Fu,S Zhong,CH Liu,ZY Zhang
DOI: https://doi.org/10.1016/j.apsusc.2005.04.053
IF: 6.7
2005-01-01
Applied Surface Science
Abstract:Nanocrystalline zinc oxide (nc-ZnO) films were prepared by a sol–gel process on p-type single-crystalline Si substrates to fabricate nc-ZnO/p-Si heterojunctions. The structure and morphology of ZnO films on Si substrates, which were analyzed by X-ray diffraction (XRD) spectroscopy and atomic force microscopy (AFM), showed that ZnO films consisted of 50–100nm polycrystalline nanograins with hexagonal wurtzite structure. The electrical transport properties of the nc-ZnO/p-Si heterojunctions were investigated by temperature-dependent current–voltage (I–V) measurements and room temperature capacitance–voltage measurements. The temperature-dependent I–V characteristics revealed that the forward conduction was determined by multi-step tunneling current, and the activation energy of saturation current was about 0.26eV. The 1/C2–V plots indicated the junction was abrupt and the junction built-in potential was 1.49V at room temperature.
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