Fabrication and Photoelectric Properties of La-doped P-Type ZnO Nanofibers and Crossed P-N Homojunctions by Electrospinning.

H. D. Zhang,M. Yu,J. C. Zhang,C. H. Sheng,X. Yan,W. P. Han,Y. C. Liu,S. Chen,G. Z. Shen,Y. Z. Long
DOI: https://doi.org/10.1039/c5nr02191j
IF: 6.7
2015-01-01
Nanoscale
Abstract:La-doped p-type ZnO nanofibers were successfully synthesized by electrospinning, followed by calcination. The microstructure and morphology of the La-doped ZnO nanofibers were characterized by scanning electron microscopy (SEM), X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS) and Raman spectroscopy. The field effect curve of individual nanofibers confirms that the resulting La-doped ZnO fibers are p-type semiconductors. The doping mechanism is discussed. Furthermore, crossed p-n homojunction nanofibers were also prepared based on electrospun La-doped p-type ZnO and n-type pure ZnO fibers. The current-voltage curve shows the typical rectifying characteristic of a p-n homojunction device. The turn-on voltage appears at about 2.5 V under the forward bias and the reverse current is impassable.
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