Abstract:Light emission from semiconductors depends not only on the efficiency of carrier injection and recombination but also extraction efficiency. For ultraviolet emission from high band gap materials such as ZnO, nanowires have higher extraction efficiencies than thin films, but conventional approaches for creating a p-n diode result in low efficiency. We exploited the noncentral symmetric nature of n-type ZnO nanowire/p-type GaN substrate to create a piezoelectric ! potential within the nanowire by applying stress. Because of the polarization of ions in a crystal that has noncentral symmetry, a piezoelectric potential (piezopotential) is created in the crystal under stress. The piezopotential acts as a "gate" voltage to tune the charge transport and enhance carrier injection, which is called the piezo-phototronic effect. We propose that band modification traps free carriers at the interface region in a channel created by the local piezoelectric charges. The emission intensity and injection current at a fixed applied voltage have been enhanced by a factor of 17 and 4, respectively, after applying a 0.093% compressive strain and improved conversion efficiency by a factor of 4.25. This huge enhanced performance is suggested arising from an effective increase in the local "biased voltage" as a result of the band modification caused by piezopotential and the trapping of holes at the interface region in a channel created by the local piezoelectric charges near the interface. Our study can be extended from ultraviolet range to visible range for a variety of optoelectronic devices that are important for today's safe, green, and renewable energy technology.

Electrical And Photoresponse Properties Of An Intramolecular P-N Homojunction In Single Phosphorus-Doped Zno Nanowires

Enhancing Light Emission of Zno Microwire-Based Diodes by Piezo-Phototronic Effect

Synthetic and Effect of Annealing on the Luminescent Properties of Zno Nanowire

Enhancing Sensitivity of A Single Zno Micro-/Nanowire Photodetector by Piezo-Phototronic Effect

Phosphorus Doped Zn1-xMgxO Nanowire Arrays

Phosphorus-Doped P-Type ZnO Nanorods and ZnO Nanorod P−n Homojunction LED Fabricated by Hydrothermal Method

Engineering of Interfacial Electron Transfer from Donor-Acceptor Type Organic Semiconductor to Zno Nanorod for Visible-Light Detection

Ultraviolet Electroluminescence from Zno/P-Si Heterojunctions

Electroluminescence from ZnO Nanowires with a P-Zno Film/n-Zno Nanowire Homojunction

Electrically Driven Ultraviolet Lasing Behavior from Phosphorus-Doped P-Zno Nanonail Array/n-Si Heterojunction

Insights into the pyro-phototronic effect in p-Si/n-ZnO nanowires heterojunction toward high-performance near-infrared photosensing

Ultraviolet Electroluminescence from In Doped n-ZnO Single-Nanowire/p~+-Si Heterostructures

Fabrication of P-Type Znse:Sb Nanowires for High-Performance Ultraviolet Light Photodetector Application

Near UV LEDs Made with in Situ Doped P-N Homojunction ZnO Nanowire Arrays

Synthesis and electrical properties of ZnO nanowires.

Electrical, Optical, and Field-Emission Properties of Phosphorus-Doped ZnO Nanowire Arrays and P-N Homojunction of ZnO nanowires

Preparation and Characterization of Self-Assembled ZnO Nanowire Devices: Nanowire Strain Sensor and Homogeneous P-N Junction.

Synthesis and Electrical Properties of ZnO Nanowires

Electrical Transport And Electroluminescence Properties Of N-Zno Single Nanowires

Enhanced Photoluminescence and Field-Emission Behavior of Vertically Well Aligned Arrays of In-Doped Zno Nanowires

P-Type Zns:N Nanowires: Low-Temperature Solvothermal Doping and Optoelectronic Properties