Abstract:Light emission from semiconductors depends not only on the efficiency of carrier injection and recombination but also extraction efficiency. For ultraviolet emission from high band gap materials such as ZnO, nanowires have higher extraction efficiencies than thin films, but conventional approaches for creating a p-n diode result in low efficiency. We exploited the noncentral symmetric nature of n-type ZnO nanowire/p-type GaN substrate to create a piezoelectric ! potential within the nanowire by applying stress. Because of the polarization of ions in a crystal that has noncentral symmetry, a piezoelectric potential (piezopotential) is created in the crystal under stress. The piezopotential acts as a "gate" voltage to tune the charge transport and enhance carrier injection, which is called the piezo-phototronic effect. We propose that band modification traps free carriers at the interface region in a channel created by the local piezoelectric charges. The emission intensity and injection current at a fixed applied voltage have been enhanced by a factor of 17 and 4, respectively, after applying a 0.093% compressive strain and improved conversion efficiency by a factor of 4.25. This huge enhanced performance is suggested arising from an effective increase in the local "biased voltage" as a result of the band modification caused by piezopotential and the trapping of holes at the interface region in a channel created by the local piezoelectric charges near the interface. Our study can be extended from ultraviolet range to visible range for a variety of optoelectronic devices that are important for today's safe, green, and renewable energy technology.

Electroluminescence from ZnO Nanowires with a P-Zno Film/n-Zno Nanowire Homojunction

Enhancing Light Emission of Zno Microwire-Based Diodes by Piezo-Phototronic Effect

Largely Enhanced Efficiency In Zno Nanowire/P-Polymer Hybridized Inorganic/Organic Ultraviolet Light-Emitting Diode By Piezo-Phototronic Effect

Synthetic and Effect of Annealing on the Luminescent Properties of Zno Nanowire

Electroluminescence from ZnO/n<sup>+</sup>-Si Heterojunction

Ultraviolet Electroluminescence from Zno/P-Si Heterojunctions

Ultraviolet Electroluminescence from In Doped n-ZnO Single-Nanowire/p~+-Si Heterostructures

Facile fabrication of nano-scale ZnO p-n junction and its blue electroluminescence

Full‐Color Electroluminescence from ZnO‐Nanoparticles‐based Homojunction Diodes

Near UV LEDs Made with in Situ Doped P-N Homojunction ZnO Nanowire Arrays

Zno Light-Emitting Diode Grown By Plasma-Assisted Metal Organic Chemical Vapor Deposition (Vol 88, 173506 2006)

Fabrication of a High‐Brightness Blue‐Light‐Emitting Diode Using a ZnO‐Nanowire Array Grown on P‐gan Thin Film

Ultraviolet Electroluminescence from Controlled Arsenic-Doped Zno Nanowire Homojunctions

Electrical And Photoresponse Properties Of An Intramolecular P-N Homojunction In Single Phosphorus-Doped Zno Nanowires

Electrical Transport And Electroluminescence Properties Of N-Zno Single Nanowires

Fairly Pure Ultraviolet Electroluminescence from Zno-Based Light-Emitting Devices

Single ZnO nanowire/p-type GaN heterojunctions for photovoltaic devices and UV light-emitting diodes.

Fabrication and emission properties of a n-ZnO/p-GaN heterojunction light-emitting diode

ZnO nanowires based UV photodiodes

Highly Uv Luminescent Zno Microtetrapod-On-Nanowire Hybrids

ZnO Light-Emitting Diodes Fabricated on Si Substrates with Homobuffer Layers