Abstract:Light emission from semiconductors depends not only on the efficiency of carrier injection and recombination but also extraction efficiency. For ultraviolet emission from high band gap materials such as ZnO, nanowires have higher extraction efficiencies than thin films, but conventional approaches for creating a p-n diode result in low efficiency. We exploited the noncentral symmetric nature of n-type ZnO nanowire/p-type GaN substrate to create a piezoelectric ! potential within the nanowire by applying stress. Because of the polarization of ions in a crystal that has noncentral symmetry, a piezoelectric potential (piezopotential) is created in the crystal under stress. The piezopotential acts as a "gate" voltage to tune the charge transport and enhance carrier injection, which is called the piezo-phototronic effect. We propose that band modification traps free carriers at the interface region in a channel created by the local piezoelectric charges. The emission intensity and injection current at a fixed applied voltage have been enhanced by a factor of 17 and 4, respectively, after applying a 0.093% compressive strain and improved conversion efficiency by a factor of 4.25. This huge enhanced performance is suggested arising from an effective increase in the local "biased voltage" as a result of the band modification caused by piezopotential and the trapping of holes at the interface region in a channel created by the local piezoelectric charges near the interface. Our study can be extended from ultraviolet range to visible range for a variety of optoelectronic devices that are important for today's safe, green, and renewable energy technology.

Zno Light-Emitting Diode Grown By Plasma-Assisted Metal Organic Chemical Vapor Deposition (Vol 88, 173506 2006)

Enhancing Light Emission of Zno Microwire-Based Diodes by Piezo-Phototronic Effect

Largely Enhanced Efficiency In Zno Nanowire/P-Polymer Hybridized Inorganic/Organic Ultraviolet Light-Emitting Diode By Piezo-Phototronic Effect

Plasma-Free Nitrogen Doping and Homojunction Light-Emitting Diodes Based on Zno

Junction Properties of Nitrogen-Doped Zno Thin Films

Blue-Yellow Zno Homostructural Light-Emitting Diode Realized By Metalorganic Chemical Vapor Deposition Technique

Fabrication and Emission Properties of a N-Zno/p-gan Heterojunction Light-Emitting Diode

Electroluminescence from ZnO Nanowires with a P-Zno Film/n-Zno Nanowire Homojunction

Electroluminescence from ZnO/n<sup>+</sup>-Si Heterojunction

Study on the Hall-effect and Photoluminescence of N-doped P-Type ZnO Thin Films

Ultraviolet Electroluminescence from Zno/P-Si Heterojunctions

Recent progress in ZnO-based heterojunction ultraviolet light-emitting devices

Fairly Pure Ultraviolet Electroluminescence from Zno-Based Light-Emitting Devices

Preparation and Photoluminescence of ZnO with Nanostructure by Hollow-Cathode Discharge

Room-temperature Electroluminescence of P-Znxmg1−xo:Na/n-zno P–n Junction Light Emitting Diode

Fabrication and Characterization of P-Zno/n-zn0.8cd0.2o/n-zno Heterojunction

Light-Emitting Diodes Based on p-GaN/i-ZnO/n-ZnO Heterojunctions

Facile fabrication of nano-scale ZnO p-n junction and its blue electroluminescence

ZnO Light-Emitting Diodes Fabricated on Si Substrates with Homobuffer Layers

P-Type Behavior in Nominally Undoped Zno Thin Films by Oxygen Plasma Growth