Abstract:ZnO nanowire inorganic/organic hybrid ultraviolet (UV) light-emitting diodes (LEDs) have attracted considerable attention as they not only combine the high flexibility of polymers with the structural and chemical stability of inorganic nanostructures but also have a higher light extraction efficiency than thin film structures. However, up to date, the external quantum efficiency of UV LED based on ZnO nanostructures has been limited by a lack of efficient methods to achieve a balance between electron contributed current and hole contributed current that reduces the nonradiative recombination at interface. Here we demonstrate that the piezo-phototronic effect can largely enhance the efficiency of a hybridized inorganic/organic LED made of a ZnO nanowire/p-polymer structure, by trimming the electron current to match the hole current and increasing the localized hole density near the interface through a carrier channel created by piezoelectric polarization charges on the ZnO side. The external efficiency of the hybrid LED was enhanced by at least a factor of 2 after applying a proper strain, reaching 5.92%. This study offers a new concept for increasing organic LED efficiency and has a great potential for a wide variety of high-performance flexible optoelectronic devices.

Blue-Yellow Zno Homostructural Light-Emitting Diode Realized By Metalorganic Chemical Vapor Deposition Technique

Largely Enhanced Efficiency In Zno Nanowire/P-Polymer Hybridized Inorganic/Organic Ultraviolet Light-Emitting Diode By Piezo-Phototronic Effect

Zno Light-Emitting Diode Grown By Plasma-Assisted Metal Organic Chemical Vapor Deposition (Vol 88, 173506 2006)

Realization of Ultraviolet Electroluminescence from ZnO Homojunction Fabricated on Silicon Substrate with P-Type ZnO:N Layer Formed by Radical N 2 O Doping

Synthesis and Defect-Related Emission of Zno Based Light Emitting Device with Homo- and Heterostructure

Room Temperature P-N ZnO Blue-Violet Light-Emitting Diodes

Room Temperature Ultraviolet Electroluminescence from ZnO Based Homojunction Device

Electroluminescence from ZnO/n<sup>+</sup>-Si Heterojunction

Fabrication of ZnO p-n homojunction by ultrasonic spray pyrolysis and its electroluminescence properties

Realization of Ultraviolet Electroluminescence from ZnO Homojunction with N-Zno∕p-zno:As∕gaas Structure

Homogeneous ZnO nanowire arrays p-n junction for blue light-emitting diode applications.

Hybrid Light-Emitting Diodes Based on Flexible Sheets of Mass-Produced Zno Nanowires

Room Temperature Blue-UV Electroluminescence from ZnO Light-Emitting Diodes Involving Na-Doped P-Type ZnO and ZnO/ZnMgO Multi-Quantum Wells

Fairly Pure Ultraviolet Electroluminescence from Zno-Based Light-Emitting Devices

Room-temperature Electroluminescence of P-Znxmg1−xo:Na/n-zno P–n Junction Light Emitting Diode

Qd-Led Devices Using Znsno As an Electron-Transporting Layer

Ultraviolet Electroluminescence of Zno Based Heterojunction Light Emitting Diode

Study on the Electroluminescence Properties of Diodes Based on N-Zno/p-nio/p-si Heterojunction

Ultraviolet Electroluminescence from ZnO-based Light-Emitting Diode with P-Zno:N/n-gan:si Heterojunction Structure

Fabrication and emission properties of a n-ZnO/p-GaN heterojunction light-emitting diode