Abstract:Short‐wavelength light‐emitting diodes (LEDs), a prevalent research topic in modern optoelectronics, have attracted considerable attention in recent years because of their vast application potential in both civil and military domains. Herein, blue‐violet LEDs are constructed via a spin‐coating solution‐processed ZnO quantum dots (QDs) onto p‐GaN: Mg wafers. By inserting a thin Al2O3 dielectric retarding layer into the ZnO QDs side, electrons injected from ITO cathode are effectively slowed and detained in the QDs emissive layer, resulting in a ≈30‐fold improvement of near‐UV electroluminescence intensity from this p‐GaN/ZnO QDs/Al2O3/ZnO QDs LED. Furthermore, by replacing pure ZnO QDs with Ag@ZnO hybrid nanodots (synthesized through a simple one‐step wet chemical route) as the electron transport layer, the device electroluminescence intensity is further increased. Time‐resolved and temperature‐dependent spectroscopy reveals that both the spontaneous emission rate and internal quantum efficiency of the ZnO QDs active layer are simultaneously increased as a result of the exciton‐localized surface plasmon resonant coupling, which leads to the observed blue‐violet electroluminescence enhancement.

Ordered nanowire array blue/near-UV light emitting diodes.

High Efficiency Single Ag Nanowire/p-Gan Substrate Schottky Junction-Based Ultraviolet Light Emitting Diodes

Fabrication of a High‐Brightness Blue‐Light‐Emitting Diode Using a ZnO‐Nanowire Array Grown on P‐gan Thin Film

Ultraviolet Electroluminescence from Au-Zno Nanowire Schottky Type Light-Emitting Diodes

Near UV LEDs Made with in Situ Doped P-N Homojunction ZnO Nanowire Arrays

Slanted n-ZnO/p-GaN nanorod arrays light-emitting diodes grown by oblique-angle deposition

Fabrication of a High-Brightness BlueLight-Emitting Diode Using a ZnO-Nanowire Array Grown on p-GaN Thin Film C A T IO

On-nanowire Spatial Band Gap Design for White Light Emission.

Structural and Optical Properties of Position-Controlled N-Zno Nanowire Arrays: Potential Applications in Optoelectronics

Single nanowire green InGaN/GaN light emitting diodes.

CdSe/CdSeS Nanoplatelet Light-Emitting Diodes with Ultrapure Green Color and High External Quantum Efficiency

High‐Density, Ordered Ultraviolet Light‐Emitting ZnO Nanowire Arrays

High-Performance Green and Blue Light-Emitting Diodes Enabled by CdZnSe/ZnS Core/Shell Colloidal Quantum Wells

Room Temperature Blue-UV Electroluminescence from ZnO Light-Emitting Diodes Involving Na-Doped P-Type ZnO and ZnO/ZnMgO Multi-Quantum Wells

Enhanced Electroluminescence from ZnO Quantum Dot Light‐Emitting Diodes via Introducing Al2O3 Retarding Layer and Ag@ZnO Hybrid Nanodots

Narrow-Bandwidth Blue-Emitting Ag-Ga-Zn-S Semiconductor Nanocrystals for Quantum-Dot Light-Emitting Diodes

High Resolution Light Emitting Diode Array Based on Ordered Zno Nanowire/Sige Heterojunction

Great enhancement in the excitonic recombination and light extraction of highly ordered InGaN/GaN elliptic nanorod arrays on a wafer scale

Ultraviolet Electroluminescence from Controlled Arsenic-Doped Zno Nanowire Homojunctions

Ultraviolet Electroluminescence from In Doped n-ZnO Single-Nanowire/p~+-Si Heterostructures

Controllable Synthesis of Cadmium-Free Blue-Emitting Cu-Ga-Zn-S-Based Nanocrystals for Solution-Processed Quantum-Dot Light-Emitting Diodes