Abstract:Light emission from semiconductors depends not only on the efficiency of carrier injection and recombination but also extraction efficiency. For ultraviolet emission from high band gap materials such as ZnO, nanowires have higher extraction efficiencies than thin films, but conventional approaches for creating a p-n diode result in low efficiency. We exploited the noncentral symmetric nature of n-type ZnO nanowire/p-type GaN substrate to create a piezoelectric ! potential within the nanowire by applying stress. Because of the polarization of ions in a crystal that has noncentral symmetry, a piezoelectric potential (piezopotential) is created in the crystal under stress. The piezopotential acts as a "gate" voltage to tune the charge transport and enhance carrier injection, which is called the piezo-phototronic effect. We propose that band modification traps free carriers at the interface region in a channel created by the local piezoelectric charges. The emission intensity and injection current at a fixed applied voltage have been enhanced by a factor of 17 and 4, respectively, after applying a 0.093% compressive strain and improved conversion efficiency by a factor of 4.25. This huge enhanced performance is suggested arising from an effective increase in the local "biased voltage" as a result of the band modification caused by piezopotential and the trapping of holes at the interface region in a channel created by the local piezoelectric charges near the interface. Our study can be extended from ultraviolet range to visible range for a variety of optoelectronic devices that are important for today's safe, green, and renewable energy technology.

Fabrication of a High‐Brightness Blue‐Light‐Emitting Diode Using a ZnO‐Nanowire Array Grown on P‐gan Thin Film

Ordered nanowire array blue/near-UV light emitting diodes.

Enhancing Light Emission of Zno Microwire-Based Diodes by Piezo-Phototronic Effect

Fabrication of a High-Brightness BlueLight-Emitting Diode Using a ZnO-Nanowire Array Grown on p-GaN Thin Film C A T IO

Homogeneous ZnO nanowire arrays p-n junction for blue light-emitting diode applications.

High-performance Ultraviolet-Blue Light-Emitting Diodes Based on an N-Zno Nanowall Networks/p-Gan Heterojunction

Fabrication and Characterization of High Quality N-Zno/p-gan Heterojunction Light Emission Diodes

Saturated Blue-Violet Electroluminescence From Single Zno Micro/Nanowire And P-Gan Film Hybrid Light-Emitting Diodes

Low-voltage blue light emission from n-ZnO/p-GaN heterojunction formed by RF magnetron sputtering method

High-Performance Ultraviolet Light-Emitting Diodes Using N-Zno/p-hbn/p-gan Contact Heterojunctions.

Ultraviolet Electroluminescence from N-Zno/nio/p-gan Light-Emitting Diode Fabricated by MOCVD

Fabrication of a White-Light-Emitting Diode by Doping Gallium into ZnO Nanowire on a p-GaN Substrate

Electroluminescence from ZnO Nanowires with a P-Zno Film/n-Zno Nanowire Homojunction

Fabrication and Emission Properties of a N-Zno/p-gan Heterojunction Light-Emitting Diode

The fabrication of white light-emitting diodes using the n-ZnO/NiO/p-GaN heterojunction with enhanced luminescence

Ultraviolet Electroluminescence From Horizontal Zno Microrods/Gan Heterojunction Light-Emitting Diode Array

The Ultralow Driven Current Ultraviolet-Blue Light-Emitting Diode Based on N-Zno Nanowires/I-Polymer/P-Gan Heterojunction

Slanted n-ZnO/p-GaN nanorod arrays light-emitting diodes grown by oblique-angle deposition

Facile fabrication of nano-scale ZnO p-n junction and its blue electroluminescence

White Light‐Emitting Diode From Sb‐Doped p‐ZnO Nanowire Arrays/n‐GaN Film