Fabrication of a White-Light-Emitting Diode by Doping Gallium into ZnO Nanowire on a p-GaN Substrate

Chih-Han Chen,Shoou-Jinn Chang,Sheng-Po Chang,Meng-Ju Li,I-Cherng Chen,Ting-Jen Hsueh,An-Di Hsu,Cheng-Liang Hsu
DOI: https://doi.org/10.1021/jp101392g
2010-07-02
The Journal of Physical Chemistry C
Abstract:This study evaluated a process for fabricating white light emitting diodes (LEDs) by doping Ga into ZnO nanowires (ZnO:Ga NWs) on p-GaN substrates. Vertically aligned ZnO:Ga NWs were grown by thermal chemical vapor deposition to 0.7 μm in length and 50−300 nm in diameter. The white light LED was successfully fabricated by forming an n-p-n heterojunction on an ITO/glass substrate. The electroluminescence (EL) emission peak was 500 nm, and the broad band fwhm intensity was 200 nm. Finally, photographs show a white light from the ZnO:Ga LED.
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