Abstract:Doping ZnO nanowires (NWs) by group IB elements is an important challenge for integrating nanostructures into functional devices with better and tuned performances. The growth of Ag-doped ZnO NWs by electrodeposition at 90 °C using a chloride bath and molecular oxygen precursor is reported. Ag acts as an electrocatalyst for the deposition and influences the nucleation and growth of the structures. The silver atomic concentration in the wires is controlled by the additive concentration in the deposition bath and a content up to 3.7 atomic % is reported. XRD analysis shows that the integration of silver enlarges the lattice parameters of ZnO. The optical measurements also show that the direct optical bandgap of ZnO is reduced by silver doping. The bandgap shift and lattice expansion are explained by first principle calculations using the density functional theory (DFT) on the silver impurity integration as an interstitial (Ag(i)) and as a substitute of zinc atom (Ag(Zn)) in the crystal lattice. They notably indicate that Ag(Zn) doping forms an impurity band because of Ag 4d and O 2p orbital interactions, shifting the Fermi level toward the valence band. At least, Ag-doped ZnO vertically aligned nanowire arrays have been epitaxially grown on GaN(001) substrate. The heterostructure has been inserted in a light emitting device. UV-blue light emission has been achieved with a low emission threshold of 5 V and a tunable red-shifted emission spectrum related to the bandgap reduction induced by silver doping of the ZnO emitter material.

Tuning the emission of ZnO nanorods based light emitting diodes using Ag doping

GaInN Light-Emitting Diodes with Omni-Directional Reflector Using Nanoporous SnO2 Film

Effect of copper and silver co-doping on growth behaviour and photoelectric properties of n-ZnO nanorods/p-GaN heterojunction light-emitting diodes

Defect-assisted tuning of electroluminescence from p-GaN/n-ZnO nanorod heterojunction

Enhancement of external quantum efficiency and quality of heterojunction white LEDs by varying the size of ZnO nanorods

Enhanced ultraviolet emission and improved spatial distribution uniformity of ZnO nanorod array light-emitting diodes via Ag nanoparticles decoration

Blue/Green Electroluminescence From A Zno Nanorods/P-Gan Heteroj Unction Light Emitting Diode Under Different Reverse Bias

Improvement Of The Electroluminescence Performance Of Zno Nanorods/P-Gan Light Emitting Diodes With A Zno Films Interlayer

Fabrication of tunable n-Zn1-xCdxO/p-GaN heterojunction light-emitting diodes

Bandgap Engineering of GaxZn1–xO Nanowire Arrays for Wavelength‐tunable Light‐emitting Diodes

The fabrication of white light-emitting diodes using the n-ZnO/NiO/p-GaN heterojunction with enhanced luminescence

Slanted n-ZnO/p-GaN nanorod arrays light-emitting diodes grown by oblique-angle deposition

Near-ultraviolet Electroluminescence from ZnO-based Light-Emitting Diodes with N-Zno Nanorod/p-Gan Direct-Bonding Heterojunction Structure

The EL properties of well-aligned n-ZnO nanorods / p-GaN structure

Enhancement of light extraction by ZnO nanostructures on vertical GaN light emitting diodes

Plasmon-enhanced Electrically Light-emitting from ZnO Nanorod Arrays/p-GaN Heterostructure Devices

Low-Temperature Preparation of Ag-Doped ZnO Nanowire Arrays, DFT Study, and Application to Light-Emitting Diode.

Homogeneous ZnO nanowire arrays p-n junction for blue light-emitting diode applications.

Ag-Decorated Localized Surface Plasmon-Enhanced Ultraviolet Electroluminescence from ZnO Quantum Dot-Based/GaN Heterojunction Diodes by Optimizing MgO Interlayer Thickness

Enhanced Electroluminescence from ZnO Quantum Dot Light‐Emitting Diodes via Introducing Al2O3 Retarding Layer and Ag@ZnO Hybrid Nanodots

Fabrication of a White-Light-Emitting Diode by Doping Gallium into ZnO Nanowire on a p-GaN Substrate