Abstract:Color-mixed (cm) light-emitting diodes (LEDs) are theoretically the most efficient white light emitters, projected to improve white light luminous efficacy by 34% compared to incumbent phosphor converted LEDs. Since white light technology is globally pervasive and essential, small improvements in LED technology can result in energy savings. However, cm-LEDs are not yet realized due to poor efficacy in green and amber emitting materials, a spectral region colloquially referred to as the green gap. ZnGeN2 is nearly isostructural and closely lattice-matched to GaN and can be heteroepitaxially integrated with existing GaN devices; ZnGeN2/GaN hybrid structures are theorized to emit green (∼530 nn) light with a spontaneous emission rate 4.6-4.9 times higher than traditional InGaN LEDs when incorporated into III-N LED structures. In this report we demonstrate the molecular beam epitaxy (MBE) growth of GaN and ZnGeN2 superlattices, an important step towards realizing multiple quantum well structures required for efficient LEDs. Elemental analysis, including atom probe tomography, shows that Ga and Ge are observed in both ZnGeN2 and GaN layers, degrading the structural uniformity. The lack of elemental abruptness also leads to increased defect luminescence and reabsorption of band edge luminescence. The source of unintentional Ga distributed throughout the ZnGeN2 layers was identified as excess flux escaping from around the closed MBE shutter. The source of unintentional Ge, which tended to incorporate as a single delta-doped layer in GaN, was identified as Ge riding along the cyclical metal-rich Ga adlayer used for high quality GaN, incorporating during subsequent nitrogen-rich growth step. Modifying the growth strategy results in improved structural quality, elemental abruptness, and luminescence response. This realization of structurally and elementally abrupt interfaces demonstrates the potential of heteroepitaxially integrated binary and ternary nitrides for energy-relevant devices.

Defect-assisted tuning of electroluminescence from p-GaN/n-ZnO nanorod heterojunction

Synthetic and Effect of Annealing on the Luminescent Properties of Zno Nanowire

Enhancing Light Emission of Zno Microwire-Based Diodes by Piezo-Phototronic Effect

Tuning the emission of ZnO nanorods based light emitting diodes using Ag doping

Fabrication and Luminescent Property of GaN Based Light-emitting Diodes with Array Nanorods Structure

Defect-Related White-Light Emission from Zno in an N-Mg0.2zn0.8o/N-Zno/Sio (X) Heterostructure on N-Si

The fabrication of white light-emitting diodes using the n-ZnO/NiO/p-GaN heterojunction with enhanced luminescence

Enhancement of external quantum efficiency and quality of heterojunction white LEDs by varying the size of ZnO nanorods

Improving luminescence response in ZnGeN2/GaN superlattices: defect reduction through composition control

Plasmon-enhanced Electrically Light-emitting from ZnO Nanorod Arrays/p-GaN Heterostructure Devices

A Novel Way to Fill Green Gap of GaN-Based LEDs by Pinning Defects in Nanorod Array.

Enhancement and tuning of the defect-induced electroluminescence of ZnO mesoporous layers in the visible range

Origin of the Electroluminescence from Annealed-ZnO/GaN Heterojunction Light-Emitting Diodes

Near Band Edge Photoluminescence Of Zno Nanowires: Optimization Via Surface Engineering

Enhanced ultraviolet emission and improved spatial distribution uniformity of ZnO nanorod array light-emitting diodes via Ag nanoparticles decoration

Slanted n-ZnO/p-GaN nanorod arrays light-emitting diodes grown by oblique-angle deposition

Improvement of light intensity and efficiency of n-ZnO/NiO/p-GaN heterojunction-based white light emitting diodes using micro-/nanolens array

Progress in Violet Light-Emitting Diodes Based on ZnO/GaN Heterojunction

Enhanced Photoluminescence and Field-Emission Behavior of Vertically Well Aligned Arrays of In-Doped Zno Nanowires

Full‐Color Electroluminescence from ZnO‐Nanoparticles‐based Homojunction Diodes

Enhanced Electroluminescence from ZnO Quantum Dot Light‐Emitting Diodes via Introducing Al2O3 Retarding Layer and Ag@ZnO Hybrid Nanodots