Enhanced Electroluminescence from ZnO Quantum Dot Light‐Emitting Diodes via Introducing Al2O3 Retarding Layer and Ag@ZnO Hybrid Nanodots
Haiyang Xu,Ceng Zhang,Zhongqiang Wang,Jiangang Ma,Guochun Yang,Liu Yang,Chunyang Liu,Weizhen Liu,Kai Liu,Yichun Liu
DOI: https://doi.org/10.1002/adom.201700493
2017-12-01
Abstract:Short‐wavelength light‐emitting diodes (LEDs), a prevalent research topic in modern optoelectronics, have attracted considerable attention in recent years because of their vast application potential in both civil and military domains. Herein, blue‐violet LEDs are constructed via a spin‐coating solution‐processed ZnO quantum dots (QDs) onto p‐GaN: Mg wafers. By inserting a thin Al2O3 dielectric retarding layer into the ZnO QDs side, electrons injected from ITO cathode are effectively slowed and detained in the QDs emissive layer, resulting in a ≈30‐fold improvement of near‐UV electroluminescence intensity from this p‐GaN/ZnO QDs/Al2O3/ZnO QDs LED. Furthermore, by replacing pure ZnO QDs with Ag@ZnO hybrid nanodots (synthesized through a simple one‐step wet chemical route) as the electron transport layer, the device electroluminescence intensity is further increased. Time‐resolved and temperature‐dependent spectroscopy reveals that both the spontaneous emission rate and internal quantum efficiency of the ZnO QDs active layer are simultaneously increased as a result of the exciton‐localized surface plasmon resonant coupling, which leads to the observed blue‐violet electroluminescence enhancement.
Engineering,Materials Science,Physics