KIT D816V-associated systemic mastocytosis with eosinophilia and FIP1L1/PDGFRA-associated chronic eosinophilic leukemia are distinct entities.

I. Maric,J. Robyn,D. Metcalfe,M. Fay,M. Carter,T. Wilson,Weiming Fu,J. Stoddard,L. Scott,Marilyn Hartsell,A. Kirshenbaum,C. Akin,T. Nutman,P. Noel,A. Klion

DOI: https://doi.org/10.1016/J.JACI.2007.05.024

IF: 14.29

2007-09-01

Journal of Allergy and Clinical Immunology

Abstract:

What problem does this paper attempt to address?

Enhanced ultraviolet emission and improved spatial distribution uniformity of ZnO nanorod array light-emitting diodes via Ag nanoparticles decoration

Wei Zhen Liu,Hai Yang Xu,Chun Liang Wang,Li Xia Zhang,Cen Zhang,Shi Yu Sun,Jian Gang Ma,Xin Tong Zhang,Jian Nong Wang,Yi Chun Liu

DOI: https://doi.org/10.1039/c3nr02844e

IF: 6.7

2013-09-21

Nanoscale

Abstract:Localized surface plasmon (LSP) enhanced ultraviolet (UV) light-emitting diodes (LEDs) were fabricated by embedding a ZnO nanorod array/p-GaN film heterostructure into a Ag-nanoparticles/PMMA composite. By optimizing the concentration of Ag nanoparticles in PMMA, two distinct changes in electroluminescence (EL) spectra were observed: (1) the UV EL component from ZnO excitons was selectively enhanced more than 13-fold and the entire spectral lineshape was changed and (2) the spatial uniformity of the output photon intensity was improved and the linewidth of an angular distribution curve was increased by ∼2 times. These observations can be attributed to near-field optical coupling between Ag LSPs and ZnO excitons. Time-resolved luminescence measurements and a model calculation reveal that the optical coupling results in the increase of the spontaneous emission rate and internal quantum efficiency of Ag-nanoparticles-decorated ZnO nanorod arrays. Moreover, the LSP-exciton interaction allows the device's EL to be coupled out of the nanorod waveguide and to be isotropically scattered into every direction, thus broadening the angular distribution of the EL intensity.
Enhanced ultraviolet emission from Au/Ag-nanoparticles@MgO/ZnO heterostructure light-emitting diodes: A combined effect of exciton- and photon- localized surface plasmon couplings

C Zhang,H Y Xu,W Z Liu,L Yang,J Zhang,L X Zhang,J N Wang,J G Ma,Y C Liu

DOI: https://doi.org/10.1364/OE.23.015565

2015-06-15

Abstract:Localized surface plasmon (LSP)-enhanced ultraviolet light-emitting diodes (LEDs) based on a Au/MgO/ZnO metal/insulator/semi- conductor heterostructure were fabricated by embedding Ag nanoparticles (Ag-NPs) into MgO dielectric layer. A ~6-fold electroluminescence (EL) enhancement was achieved from the Ag-NPs decorated device. Time-resolved spectroscopy studies, as well as analogue simulation and theoretical estimation based on experimental data, reveal that the internal quantum efficiency and light extraction efficiency of the heterojunction LED are increased ~3-fold and ~2-fold, respectively, as a result of the introduction of Ag LSPs. This result indicates that the observed EL enhancement originates from a combined effect of both exciton-LSP coupling and photon-LSP coupling.
Plasmon-enhanced Electrically Light-emitting from ZnO Nanorod Arrays/p-GaN Heterostructure Devices

Junfeng Lu,Zengliang Shi,Yueyue Wang,Yi Lin,Qiuxiang Zhu,Zhengshan Tian,Jun Dai,Shufeng Wang,Chunxiang Xu

DOI: https://doi.org/10.1038/srep25645

IF: 4.6

2016-01-01

Scientific Reports

Abstract:Effective and bright light-emitting-diodes (LEDs) have attracted broad interests in fundamental research and industrial application, especially on short wavelength LEDs. In this paper, a well aligned ZnO nanorod arrays grown on the p-GaN substrate to form a heterostructured light-emitting diode and Al nanoparticles (NPs) were decorated to improve the electroluminescence performance. More than 30-folds enhancement of the electroluminescence intensity was obtained compared with the device without Al NPs decoration. The investigation on the stable and transient photoluminescence spectraof the ZnO nanorod arrays before and after Al NPs decoration demonstrated that the metal surface plasmon resonance coupling with excitons of ZnO leads to the enhancement of the internal quantum efficiency (IQE). Our results provide aneffective approach to design novel optoelectronic devices such as light-emitting diodes and plasmonic nanolasers.
Improved Electroluminescence from Silicon Nitride Light Emitting Devices by Localized Surface Plasmons

Dongsheng Li,Feng Wang,Changrui Ren,Deren Yang

DOI: https://doi.org/10.1364/ome.2.000872

2012-01-01

Optical Materials Express

Abstract:Enhanced electroluminescence (EL) from SiNx light emitting devices (LEDs) with an ITO/SiO2/SiNx/Ag/p/p+-Si/Al structure was observed. Comparing to SiNx LEDs without Ag islands layer, those with Ag islands layer could conduct a higher injection current and extract light more efficiently due to the roughness of Ag islands film. Moreover, the localized surface plasmons induced by Ag islands enhanced the radiative efficiency of LEDs, resulting in the EL enhancement of ~14. By the combination enhancement on light extraction efficiency, radiative efficiency, and current-injection efficiency, the external quantum efficiency of EL from SiNx LEDs was improved by at least one order of magnitude.
Plasmonically-boosted Exciton-Photon Coupling Strength in a Near-Infrared LED Based on a ZnO:Ga Microwire/gaas Heterojunction with Surface-Coated Au&Ag Alloy Nanorods.

Lixiang Sun,Kai Tang,Peng Wan,Maosheng Liu,Daning Shi,Caixia Kan,Mingming Jiang

DOI: https://doi.org/10.1039/d4cp03265a

IF: 3.3

2024-01-01

Physical Chemistry Chemical Physics

Abstract:The development of electrically-driven low-dimensional coherent light sources via highly-polarized polariton emission behavior has been extensively researched, but suffers from limited modulation of the exciton-photon coupling strengths. Herein, an electrically-biased near-infrared exciton-polariton light-emitting diode (LED), which includes a Ga-doped ZnO microwire (ZnO:Ga MW) and p-type GaAs substrate, is demonstrated. The well-designed LED structure is conducive to producing strong coupling between excitons and cavity photons, thus yielding highly-polarized light-emissions due to the optical birefringence in the ZnO:Ga MW microcavity. In particular, when the LED device is modified using Au&Ag alloy nanorods (AuAgNRs) with desired plasmonic properties, the electroluminescence (EL) performance is significantly boosted, especially the Rabi-splitting energy, which increases from 96 to 285 meV. The current-injection exciton-polariton emission from the LED undergoing a strong coupling regime is confirmed through angle-resolved EL measurements. This study exhibits a performance-boosted near-infrared exciton-polariton LED at room temperature, which provides a new scheme toward the realization of highly energy-efficient polariton coherent light sources. Further, the significantly lower density of polariton states induced by the incorporated metal nanostructures highlights a bright future of realizing ultralow-threshold polariton lasers much more feasibly, in comparison to conventional lasers based on narrow bandgap semiconductors. A plasmonically-boosted exciton-polariton near-infrared LED based on an n-AuAgNRs@ZnO:Ga microwire/p-GaAs heterojunction is realized, with its Rabi splitting energies increased from 96 to 285 meV.
Photoluminescence intensity enhancement of nanorod micro-LEDs via localized surface plasmon coupling

Zaifa Du,Aoqi Fang,Penghao Tang,Xinmin Fan,Jie Sun,Weiling Guo,Yan Wang,Jianxin Zhang

DOI: https://doi.org/10.1088/1361-6463/ad9286

2024-11-18

Journal of Physics D Applied Physics

Abstract:Nano-LEDs intended for using in ultra-high resolution displays due to their small size and high pixel density characteristics. However, traditional photolithography techniques are unable to meet the requirements for nanoscale LED fabrication. Besides, as the size decreases and the specific surface area increases, the non-radiative recombination generated by the sidewalls defects greatly affects the efficiency of nano-LEDs. In this work, a nano-LED array with single nanorod size of 800 nm using nanosphere lithography and etching technology was fabricated. Meanwhile, a localized surface plasmons (LSPs) coupling technology was applied to enhance the PL efficiency of nano-LEDs. By comparing with bare nano-LEDs, the PL intensity was enhanced by about 43% and 129% when Ag and Ag@SiO2 nanoparticles (NPs) were added separately. The existence of LSPs coupling process has been further confirmed through time-resolved photoluminescence (TR-PL) measurement and finite element simulation analysis of different samples. The results fully confirm the LSPs coupling technology on the efficiency enhancement of nanoscale LEDs.

physics, applied
Production and metabolic engineering of terpenoid indole alkaloids in cell cultures of the medicinal plant Catharanthus roseus (L.) G. Don (Madagascar periwinkle)

Meiqi Zhou,Ji-rong Shao,Yixiong Tang

DOI: https://doi.org/10.1042/BA20080239

2009-04-01

Biotechnology and Applied Biochemistry

Abstract:The Madagascar periwinkle [Catharanthus roseus (L.) G. Don] is a plant species known for its production of TIAs (terpenoid indole alkaloids), many of which are pharmaceutically important. Ajmalicine and serpentine are prescribed for the treatment of hypertension, whereas the bisindoles vinblastine, vincristine and 3′,4′‐anhydrovinblastine are used for their antineoplastic activity in the treatment of many cancers. However, TIAs are produced in small yields in C. roseus, which make them expensive. Cell and metabolic engineering has focused on increasing flux through the TIA pathway by various means, including optimization of medium composition, elicitation, construction of noval culture systems and introduction of genes encoding specific metabolic enzymes into the C. roseus genome. The present review will attempt to present the state‐of‐the‐art of research in this area and provide an update on the cell and metabolic engineering of TIAs in C. roseus. We hope that this will contribute to a better understanding of the ways in which TIA production can be achieved in different C. roseus culture systems.
Enhancement of Zno Light Emission Via Coupling with Localized Surface Plasmon of Ag Island Film

Peihong Cheng,Dongsheng Li,Zhizhong Yuan,Peiliang Chen,Deren Yang

DOI: https://doi.org/10.1063/1.2839404

IF: 4

2008-01-01

Applied Physics Letters

Abstract:Enhancement of the light emission of ZnO films was observed by coupling through localized surface plasmons. By sputtering Ag islands onto ZnO films, their band gap emission coming through the Ag island films was enhanced by threefolds, while the defect emission was quenched. The enhancement was found to be mainly dependent on the sputtering time of the Ag islands, which is related to the island size. Furthermore, the relative spectral position between the ZnO emission band and the localized surface plasmon resonance bands of Ag islands was found to be decisive for the enhancement or quenching of photoluminescence, indicating that the emission intensity of ZnO films can be controlled by the Ag island size and the localized surface plasmon resonance band position.
Fairly Pure Ultraviolet Electroluminescence from Zno-Based Light-Emitting Devices

Peiliang Chen,Xiangyang Ma,Deren Yang

DOI: https://doi.org/10.1063/1.2352722

IF: 4

2006-01-01

Applied Physics Letters

Abstract:Fairly pure ultraviolet (UV) electroluminescence (EL) was realized on a ZnO-based metal-insulator (SiOx,x⩽2)-semiconductor structure on a silicon substrate, which was easily fabricated by the reactive direct current sputtering and electron beam evaporation. The UV EL originated from the near-band-edge (NBE) emission of ZnO was achieved at room temperature when the device was under sufficient forward bias with the negative voltage applied on the silicon substrate. Moreover, the intermediate SiOx layer should be thick enough to confine the electrons in the conduction band of ZnO beneath the ZnO∕SiOx interface, which is critical for generation of NBE emission from ZnO.
Effect of SiO2 Spacer-Layer Thickness on Localized Surface Plasmon-Enhanced ZnO Nanorod Array LEDs

Weizhen Liu,Haiyang Xu,Siyi Yan,Cen Zhang,Lingling Wang,Chunliang Wang,Liu Yang,Xinhua Wang,Lixia Zhang,Jiannong Wang,Yichun Liu

DOI: https://doi.org/10.1021/acsami.5b08382

2016-01-27

Abstract:Localized surface plasmon (LSP)-enhanced ultraviolet LEDs have been constructed via spin-coating Ag nanoparticles onto ZnO/SiO2 core/shell nanorod array/p-GaN heterostructures. Different from the previous reports where the dielectric spacer-layer thickness was determined only through photoluminescence (PL) characterization, the SiO2 shell thickness in this work is also optimized by actual electroluminescence (EL) measurements to maximize the enhancement. It is interesting to find that the enhancement ratios derived from PL and EL measurements demonstrate different thickness dependences on SiO2 shell: an optimal 3.5-fold PL enhancement was obtained at the SiO2 thickness of 16 nm, while an "abnormal" 7-fold EL enhancement was achieved at the thickness of 12 nm. Time-resolved spectroscopy studies, as well as theoretical estimations and numerical simulations, reveal that the higher-ratio EL enhancement stems from joint contributions, both internal-quantum-efficiency improvement induced by exciton-LSP coupling and light-extraction-efficiency improvement aroused by photon-LSP coupling.
Enhanced Electroluminescence from Silicon-Based Light-Emitting Devices with Mg0.4zn0.6o/Erbium-Doped Zno Heterostructures by Using Ito/Moo3 Combined Anode

Chengtao Xia,Ran Ji,Shuming Jiang,Xiaodong Zhu,Anchen Tang,Deren Yang,Xiangyang Ma

DOI: https://doi.org/10.1016/j.apsusc.2024.161782

IF: 6.7

2025-01-01

Applied Surface Science

Abstract:We have realized the erbium (Er)-related visible and near-infrared (NIR) electroluminescence (EL) from the Mg0.4Zn0.6O/ZnO:Er/n+-Si heterostructured light-emitting device (LED) using the semi-transparent Au film as the anode, where the impact-excitation of Er3+ ions is enabled by hot holes that are generated in the Mg0.4Zn0.6O acceleration layer. However, it remains a challenge to simultaneously achieve more efficient injection of holes into Mg0.4Zn0.6O layer and stronger light emanation for the Mg0.4Zn0.6O/ZnO:Er/n+-Si heterostructured LED. Addressing this issue, we report on the substitution of an ITO/MoO3 combined anode for the Au anode in the aforementioned LED to enhance the EL. Through the optimization of MoO3 film thickness, the substitution of ITO/MoO3 combined anode for Au anode leads to the enhanced EL from the Mg0.4Zn0.6O/ZnO:Er/n+-Si heterostructured LED with a factor of more than 5 in the visible region and with a factor of more than 13 in the NIR region. The higher transmittances and larger refraction indices in both visible and NIR regions and the better hole-injection capability of the ITO/MoO3 combined anode, with respect to those of Au anode, are responsible for the significantly enhanced EL as mentioned above. This work sheds light on the application of ITO/MoO3 combined anode into all-inorganic LEDs.
Enhanced Electroluminescence from ZnO Quantum Dot Light‐Emitting Diodes via Introducing Al2O3 Retarding Layer and Ag@ZnO Hybrid Nanodots

Haiyang Xu,Ceng Zhang,Zhongqiang Wang,Jiangang Ma,Guochun Yang,Liu Yang,Chunyang Liu,Weizhen Liu,Kai Liu,Yichun Liu

DOI: https://doi.org/10.1002/adom.201700493

2017-12-01

Abstract:Short‐wavelength light‐emitting diodes (LEDs), a prevalent research topic in modern optoelectronics, have attracted considerable attention in recent years because of their vast application potential in both civil and military domains. Herein, blue‐violet LEDs are constructed via a spin‐coating solution‐processed ZnO quantum dots (QDs) onto p‐GaN: Mg wafers. By inserting a thin Al2O3 dielectric retarding layer into the ZnO QDs side, electrons injected from ITO cathode are effectively slowed and detained in the QDs emissive layer, resulting in a ≈30‐fold improvement of near‐UV electroluminescence intensity from this p‐GaN/ZnO QDs/Al2O3/ZnO QDs LED. Furthermore, by replacing pure ZnO QDs with Ag@ZnO hybrid nanodots (synthesized through a simple one‐step wet chemical route) as the electron transport layer, the device electroluminescence intensity is further increased. Time‐resolved and temperature‐dependent spectroscopy reveals that both the spontaneous emission rate and internal quantum efficiency of the ZnO QDs active layer are simultaneously increased as a result of the exciton‐localized surface plasmon resonant coupling, which leads to the observed blue‐violet electroluminescence enhancement.

Engineering,Materials Science,Physics
Plasmonically-boosted exciton-photon coupling strength in a near-infrared LED based on ZnO:Ga microwire/GaAs heterojunction with surface-coated Au & Ag Alloy nanorods

Lixiang Sun,Mingming Jiang,Kai Tang,Peng Wan,Maosheng Liu,Daning Shi,Caixia Kan

DOI: https://doi.org/10.1039/d4cp03265a

IF: 3.3

2024-09-25

Physical Chemistry Chemical Physics

Abstract:The advancement of developing electrically-driven low-dimensional coherent light sources via highly-polarized polariton emission behavior has been extensively researched, but suffering from the limitation of modulating the exciton-photon coupling strengths. Herein, electrically-biased near-infrared exciton-polariton light-emitting diode (LED), which includes a Ga-doped ZnO microwire (ZnO:Ga MW) and p-type GaAs substrate, is displayed. The well-designed LED structure is conducive to produce strong coupling between excitons and cavity photons, thus yielding highly-polarized light-emissions due to the optical birefringence in the ZnO:Ga MW microcavity. Particularly, as the LED device is modified using Au & Ag alloy nanorods (AuAgNRs) with given plasmons, the electroluminescence (EL) performances, especially for the Rabi-splitting energies, are significantly boosted from 96 to 285 meV. The current-injection exciton-polariton emission from the LED undergoing strong coupling regime is confirmed through angle-resolved EL measurements. This study exhibit performance-boosted near-infrared exciton-polariton LED at room temperature, which provides a new scheme toward the realization of high energy-efficient polariton coherent light sources. Further, the significantly lower density of polariton states induced by incorporated metal nanostructures can highlight the bright future of realizing ultralow-threshold polariton lasers much more feasible by comparing to conventional lasers based on narrow bandgap semiconductors.

chemistry, physical,physics, atomic, molecular & chemical
Localized surface plasmon-enhanced nanorod micro-LEDs with Ag nanoparticles embedded in insulating and planarizing spin-on glass

Aoqi Fang,Jixin Liu,Zaifa Du,Penghao Tang,Yiyang Xie,Weiling Guo,Hao Xu,Jie Sun

DOI: https://doi.org/10.1063/5.0211870

IF: 4

2024-07-08

Applied Physics Letters

Abstract:To enhance the emission of GaN-based Micro-LEDs (μLEDs), we etched uniform nanorods (NRs) on the μLED surface and filled the nanorod gaps with spin-on glass (SOG) containing mixed Ag nanoparticles (NPs). The nanorod structure creates a conducive environment for close interaction between Ag NPs and quantum wells (QWs), facilitating the coupling of Ag NPs as localized surface plasmons (LSPs) with the QWs to enhance light emission. The SOG acts as an insulating layer between Ag NPs and NRs, preventing electron leakage, while also serving as a planarization material for the nanorod structure. This configuration allows for the fabrication of a planar Indium Tin Oxide layer without short-circuiting the nanorod structure. Compared to traditional planar Micro-LEDs, NR-μLEDs with SOG-encased Ag NPs exhibit a 50% increase in electroluminescence (EL) intensity and a 56% increase in photoluminescence (PL) intensity. This work paves the way for broader applications of LSP in μLEDs.

physics, applied
Mechanisms in Photoluminescence Enhancement of ZnO Nanorod Arrays by the Localized Surface Plasmons of Ag Nanoparticles

Jun-Cao Bian,Fei Yang,Zhe Li,Jie-Liang Zeng,Xi-Wen Zhang,Zhong-Dong Chen,Jeannie Ziang Yie Tan,Rui-Qun Peng,Hai-Yan He,Juan Wang

DOI: https://doi.org/10.1016/j.apsusc.2012.05.046

IF: 6.7

2012-01-01

Applied Surface Science

Abstract:Photoluminescence properties of ZnO nanorod arrays decorated by Ag nanoparticles have been studied. It was found the enhancement of near-band-edge emission of ZnO was attributed to the giant local electronic fields of Ag nanoparticles, which was confirmed by annealing treatment and surface-enhanced Raman scattering spectra. The enhancement of visible emission band was due to the exciton-localized surface plasmons coupling effect.
Direct resonant coupling of Al surface plasmon for ultraviolet photoluminescence enhancement of ZnO microrods.

Junfeng Lu,Jitao Li,Chunxiang Xu,Yu Li,Jun Dai,Yueyue Wang,Yi Lin,Shufeng Wang

DOI: https://doi.org/10.1021/am505492r

IF: 9.5

2014-01-01

ACS Applied Materials & Interfaces

Abstract:More than 170-fold ultraviolet emission enhancement was obtained from the hexagonal ZnO microrods synthesized by a simple vapor-phase transport process and decorated by Al nanoparticles (NPs). Based on the stable and transient photoluminescence (PL) spectra of the ZnO microrods sputtered with Al NPs for different times, the underlying mechanism was deduced and can be attributed to the metal surface plasmon resonance (SPR) coupling with ZnO. Interestingly, with increasing of the sputtering time, the ratio of the band gap emission to the defect-related emission was increased from 0.1 to 42.7. Our results demonstrated that ZnO microrods decorated with Al NPs shed light on developing stable and high-efficiency excitonic optoelectronic devices such as light-emitting diodes and lasers.
Electroluminescence from Light-Emitting Devices Based on Erbium-Doped ZnO/n-Si Heterostructures: Enhancement Effect of Fluorine Co-Doping

Jinxin Chen,Weijun Zhu,Yuhan Gao,Deren Yang,Xiangyang Ma

DOI: https://doi.org/10.1364/oe.27.030919

IF: 3.8

2019-01-01

Optics Express

Abstract:We report on erbium (Er) related electroluminescence (EL) in the visible and near infrared (NIR) regions from the light-emitting device (LED) based on the Er-doped ZnO (ZnO:Er)/n-Si isotype heterostructure formed by sputtering ZnO:Er film on n-Si/n(+)-Si epitaxial wafer. Herein, the ZnO:Er film exhibits n-type in electrical conduction. The aforementioned LED is electroluminescent only under sufficiently high forward bias with the negative voltage connecting to n(+)-Si substrate. Such forward bias enables the electrons from n-Si to enter into the ultra-thin SiOx (x <= 2) layer inherently existing between the ZnO:Er film and n-Si via Poole-Frenkel conduction mechanism and, subsequently, to drift into the ZnO:Er film thus becoming hot electrons, which impact-excite the Er3+ ions to emit characteristic visible and NIR light. Furthermore, the Er-related EL from the aforementioned LED can be significantly enhanced through adopting the strategy of co-doping F ions into the ZnO host, which brings about twofold primary effects. Firstly, due to the atomic size compensation between F and Er3+ ions, the ZnO crystal grains become larger to accommodate much more optically active Er3+ ions. Secondly, the partial substitution of F ions for O2- ions around the Er3+ ion reduces the symmetry of pseudo-octahedral crystal field of Er3+ ion, thus increasing the probabilities of intra-4f transitions of Er3+ ions. We believe that this work sheds light on developing efficient silicon-based LEDs using the Er-doped oxide semiconductors. (C) 2019 Optical Society of America under the terms of the OSA Open Access Publishing Agreement
High Efficiency Single Ag Nanowire/p-Gan Substrate Schottky Junction-Based Ultraviolet Light Emitting Diodes

Y. Wu,T. Hasan,X. Li,P. Xu,Y. Wang,X. Shen,X. Liu,Q. Yang

DOI: https://doi.org/10.1063/1.4907568

IF: 4

2015-01-01

Applied Physics Letters

Abstract:We report a high efficiency single Ag nanowire (NW)/p-GaN substrate Schottky junction-based ultraviolet light emitting diode (UV-LED). The device demonstrates deep UV free exciton electroluminescence at 362.5 nm. The dominant emission, detectable at ultralow (<1 μA) forward current, does not exhibit any shifts when the forward current is increased. External quantum efficiency (EQE) as high as 0.9% is achieved at 25 μA current at room temperature. Experiments and simulation analysis show that devices fabricated with thinner Ag NWs have higher EQE. However, for very thin Ag NWs (diameter < 250 nm), this trend breaks down due to heat accumulation in the NWs. Our simple device architecture offers a potentially cost-effective scheme to fabricate high efficiency Schottky junction-based UV-LEDs.
Ultraviolet Electroluminescence from Au-Zno Nanowire Schottky Type Light-Emitting Diodes

Fan Gao,Dakuan Zhang,Jianyu Wang,Huabin Sun,Yao Yin,Yun Sheng,Shancheng Yan,Bo Yan,Chenghua Sui,Youdou Zheng,Yi Shi,Jianlin Liu

DOI: https://doi.org/10.1063/1.4954758

IF: 4

2016-01-01

Applied Physics Letters

Abstract:Ultraviolet electroluminescence from Schottky type LED device is demonstrated. The device prototype is based on Schottky junctions formed between Au and the top ends of ZnO nanowire arrays. Rectifying current-voltage characteristics are observed, and three different charge transport mechanisms are discussed in detail. Excitonic electroluminescence at around 380 nm is detected at high forward bias and the linear relationship between intensity and current suggests a LED device performance. The observation of LED signals from the simple Schottky structure provides a potential supplement to the category of ultraviolet LED devices.
Enhanced ultraviolet electroluminescence from ZnO nanoparticles via decoration of partially oxidized Al layer.

S. Chan,Ching-Yen Wang,H. Hsu,Sheng‐Chan Wu

DOI: https://doi.org/10.1364/oe.382340

IF: 3.8

2020-02-03

Optics Express

Abstract:We construct the ZnO-based superluminescent light-emitting diodes (SLEDs) by spin-coating ZnO nano-particles onto p-GaN/sapphire substrate. By inserting another thin Al layer to form an n-ZnO/Al/n-ZnO/p-GaN sandwich structured SLD, the intensities of the photoluminescence and electroluminescence were greatly enhanced, which can be attributed to the surface plasmon resonance of this Al layer. The tendency of the intensities of the entire electroluminescence spectra shows a super-linearly behavior with increasing the forward bias. Besides, the spectral bandwidth is narrowed down enormously owing to the achievement of the SLD. Furthermore, the interfacial emissions between ZnO/GaN are effectively suppressed by partially oxidizing the Al layer.

Engineering,Medicine,Materials Science,Physics

KIT D816V-associated systemic mastocytosis with eosinophilia and FIP1L1/PDGFRA-associated chronic eosinophilic leukemia are distinct entities.

Enhanced ultraviolet emission and improved spatial distribution uniformity of ZnO nanorod array light-emitting diodes via Ag nanoparticles decoration

Enhanced ultraviolet emission from Au/Ag-nanoparticles@MgO/ZnO heterostructure light-emitting diodes: A combined effect of exciton- and photon- localized surface plasmon couplings

Plasmon-enhanced Electrically Light-emitting from ZnO Nanorod Arrays/p-GaN Heterostructure Devices

Improved Electroluminescence from Silicon Nitride Light Emitting Devices by Localized Surface Plasmons

Plasmonically-boosted Exciton-Photon Coupling Strength in a Near-Infrared LED Based on a ZnO:Ga Microwire/gaas Heterojunction with Surface-Coated Au&Ag Alloy Nanorods.

Photoluminescence intensity enhancement of nanorod micro-LEDs via localized surface plasmon coupling

Production and metabolic engineering of terpenoid indole alkaloids in cell cultures of the medicinal plant Catharanthus roseus (L.) G. Don (Madagascar periwinkle)

Enhancement of Zno Light Emission Via Coupling with Localized Surface Plasmon of Ag Island Film

Fairly Pure Ultraviolet Electroluminescence from Zno-Based Light-Emitting Devices

Effect of SiO2 Spacer-Layer Thickness on Localized Surface Plasmon-Enhanced ZnO Nanorod Array LEDs

Enhanced Electroluminescence from Silicon-Based Light-Emitting Devices with Mg0.4zn0.6o/Erbium-Doped Zno Heterostructures by Using Ito/Moo3 Combined Anode

Enhanced Electroluminescence from ZnO Quantum Dot Light‐Emitting Diodes via Introducing Al2O3 Retarding Layer and Ag@ZnO Hybrid Nanodots

Plasmonically-boosted exciton-photon coupling strength in a near-infrared LED based on ZnO:Ga microwire/GaAs heterojunction with surface-coated Au & Ag Alloy nanorods

Localized surface plasmon-enhanced nanorod micro-LEDs with Ag nanoparticles embedded in insulating and planarizing spin-on glass

Mechanisms in Photoluminescence Enhancement of ZnO Nanorod Arrays by the Localized Surface Plasmons of Ag Nanoparticles

Direct resonant coupling of Al surface plasmon for ultraviolet photoluminescence enhancement of ZnO microrods.

Electroluminescence from Light-Emitting Devices Based on Erbium-Doped ZnO/n-Si Heterostructures: Enhancement Effect of Fluorine Co-Doping

High Efficiency Single Ag Nanowire/p-Gan Substrate Schottky Junction-Based Ultraviolet Light Emitting Diodes

Ultraviolet Electroluminescence from Au-Zno Nanowire Schottky Type Light-Emitting Diodes

Enhanced ultraviolet electroluminescence from ZnO nanoparticles via decoration of partially oxidized Al layer.