Abstract:Interface engineering in the fabrication of low-dimensional optoelectronic devices has been highlighted in recent decades to enhance device characteristics such as reducing leakage current, optimizing charge transport, and modulating the energy-band structure. In this paper, we report a dielectric interface approach to realize one-dimensional (1D) wire near-infrared light-emitting devices with high brightness and enhanced emission efficiency. The light-emitting diode is composed of a zinc oxide microwire covered by a silver nanolayer (Ag@ZnO MW), magnesium oxide (MgO) buffer layer, and p-type gallium arsenide (GaAs) substrate. In the device structure, the insertion of a MgO dielectric layer in the n-ZnO MW/p-GaAs heterojunction can be used to modulate the device features, such as changing the charge transport properties, reducing the leakage current and engineering the band alignment. Furthermore, the cladding of the Ag nanolayer on the ZnO MW can optimize the junction interface quality, thus reducing the turn-on voltage and increasing the current injection and electroluminescence (EL) efficiency. The combination of MgO buffer layer and Ag nanolayer cladding can be utilized to achieve modulating the carrier recombination path, interfacial engineering of heterojunction with optimized band alignment and electronic structure in these carefully designed emission devices. Besides, the enhanced near-infrared EL and improved physical contact were also obtained. The study of current transport modulation and energy-band engineering proposes an original and efficient route for improving the device performances of 1D wire-type heterojunction light sources.

$n\hbox{-ZnO}/n\hbox{-GaAs}$ Heterostructured White Light-Emitting Diode: Nanoscale Interface Analysis and Electroluminescence Studies

Enhancing Light Emission of Zno Microwire-Based Diodes by Piezo-Phototronic Effect

Defect-Related White-Light Emission from Zno in an N-Mg0.2zn0.8o/N-Zno/Sio (X) Heterostructure on N-Si

The fabrication of white light-emitting diodes using the n-ZnO/NiO/p-GaN heterojunction with enhanced luminescence

Fabrication of a White-Light-Emitting Diode by Doping Gallium into ZnO Nanowire on a p-GaN Substrate

Qd-Led Devices Using Znsno As an Electron-Transporting Layer

Electroluminescence from ZnO/n<sup>+</sup>-Si Heterojunction

Surface Plasmon Enhanced Graphene/P-Gan Heterostructure Light-Emitting Diode by Ag Nano-Particles

Ultraviolet and Visible Electroluminescence from N-Zno∕siox∕(n,p)-si Heterostructured Light-Emitting Diodes

White light emission from CdTe quantum dots decorated n-ZnO nanorods/p-GaN light-emitting diodes

Fabrication and Emission Properties of a N-Zno/p-gan Heterojunction Light-Emitting Diode

White light-emitting quantum dot diodes and tuning of luminescence processes

Facile approaches to prepare n-ZnO/(i-ZnO)/p-GaN heterojunction light-emitting diodes with white-light-electroluminescence

Green Light-Emitting Diode Based on Graphene-Zno Nanowire Van Der Waals Heterostructure

One-chip multicolor electroluminescence from an isotype heterojunction light-emitting diode

On-nanowire Spatial Band Gap Design for White Light Emission.

Plasmon-enhanced Electrically Light-emitting from ZnO Nanorod Arrays/p-GaN Heterostructure Devices

White-Light Electroluminescence From n-ZnO/p-GaN Heterojunction Light-Emitting Diodes at Reverse Breakdown Bias

Interface engineering enhanced near-infrared electroluminescence in an n-ZnO microwire/p-GaAs heterojunction.