Abstract:ZnO nanowires were successfully fabricated by using the hydrothermal method in the existence of the poly ethylene glycol (PEG) with the molecular weight of 200. The experimental results exhibit that the ZnO nanowires with the diameter of ~30nm and the length of ten micrometers. PL spectra show a weak ultraviolet emission and an intense broad visible emission band for as-grown and annealed samples. These visible emission bands exhibit red-shifts from green (545nm) to yellow (580nm) and blue-shifts from yellow (580nm) to green (520nm) by annealing at aerobic or anaerobic environment, it indicates that the defect types are changed by annealed at different environment. Additionally, the red-shifts (520nm) and blue-shifts (580) can match up the bimodal lorentzian fitting (520nm and 583nm) of as-growth, which suggest that the visible emission band (545nm) is closely related to oxygen defects. The oxygen atomic can enter into the crystal lattice of ZnO and decrease the oxygen vacancy in air or oxygen, whereas, more oxygen vacancy defects is gave rise in vacuum annealed. We guess the energy levels of the intrinsic defects in ZnO nanowire maybe like that: the electrons of Zni defects compound with holes of VZn, Oi and OZn levels and conform to the yellow emission, and the green emission corresponds to the electron transition from the association defects deep donor level to the valence band.

Facile fabrication of nano-scale ZnO p-n junction and its blue electroluminescence

Synthetic and Effect of Annealing on the Luminescent Properties of Zno Nanowire

Electroluminescence from ZnO Nanowires with a P-Zno Film/n-Zno Nanowire Homojunction

Junction Properties of Nitrogen-Doped Zno Thin Films

Electroluminescence from ZnO/n<sup>+</sup>-Si Heterojunction

Fairly Pure Ultraviolet Electroluminescence from Zno-Based Light-Emitting Devices

Ultraviolet Electroluminescence from Zno/P-Si Heterojunctions

Fabrication of a High‐Brightness Blue‐Light‐Emitting Diode Using a ZnO‐Nanowire Array Grown on P‐gan Thin Film

Fabrication and Characterization of P-Zno/n-zn0.8cd0.2o/n-zno Heterojunction

Fabrication and Characterization of High Quality N-Zno/p-gan Heterojunction Light Emission Diodes

Phosphorus-Doped P-Type ZnO Nanorods and ZnO Nanorod P−n Homojunction LED Fabricated by Hydrothermal Method

Electroluminescence from a n-ZnO nanorod/p-CuAlO2 heterojunction light-emitting diode

Room Temperature P-N ZnO Blue-Violet Light-Emitting Diodes

Fabrication and Emission Properties of a N-Zno/p-gan Heterojunction Light-Emitting Diode

Room-temperature Electroluminescence of P-Znxmg1−xo:Na/n-zno P–n Junction Light Emitting Diode

Zno Light-Emitting Diode Grown By Plasma-Assisted Metal Organic Chemical Vapor Deposition (Vol 88, 173506 2006)

Electrical Transport And Electroluminescence Properties Of N-Zno Single Nanowires

Near UV LEDs Made with in Situ Doped P-N Homojunction ZnO Nanowire Arrays

Controllable Synthesis and Optical,Electrical Properties of ZnO Nanotube Arrays/p-Si Hetero-structures

Room Temperature Blue-UV Electroluminescence from ZnO Light-Emitting Diodes Involving Na-Doped P-Type ZnO and ZnO/ZnMgO Multi-Quantum Wells