Abstract:Nominally undoped ZnO films were deposited by reactive sputtering on the lightly boron-doped (p−) and heavily boron-doped (p+) silicon substrates. The sputtered ZnO films were identified to be highly ⟨002⟩ oriented in crystallinity and n type in electrical conductivity. The current-voltage (I-V) characteristics revealed that the ZnO∕p−-Si heterojunction exhibited well-defined rectifying behavior while the ZnO∕p+-Si heterojunction did not possess rectifying function. As for the ZnO∕p+-Si heterojunction, it was electroluminescent to a certain extent in the visible region under sufficient forward bias with the positive voltage on the silicon substrate, while it emitted ultraviolet light characteristics of near-band-edge emission of ZnO under the reverse bias, which significantly dominated the visible emission. In contrast to the ZnO∕p+-Si heterojunction, the ZnO∕p−-Si heterojunction did not exhibit detectable electroluminescence (EL) under either forward or reverse bias. The I-V characteristics and EL mechanism of the above-mentioned heterojunctions have been tentatively explained in terms of the energy-band structures of the heterojunctions.

Fabrication and Characterization of P-Zno/n-zn0.8cd0.2o/n-zno Heterojunction

Junction Properties of Nitrogen-Doped Zno Thin Films

Microstructure, Wettability and Electrical Properties of N-Zno/zno-sl/p-cu2o Heterojunction

Electrical Characterization of Zno-Based Homojunctions

ZnO P-N Homojunctions and Ohmic Contacts to Al–N-co-doped P-Type ZnO

Fabrication and Emission Properties of a N-Zno/p-gan Heterojunction Light-Emitting Diode

p-type ZnO films by codoping of nitrogen and aluminum and ZnO-based p–n homojunctions

Ultraviolet Electroluminescence from Zno/P-Si Heterojunctions

Electroluminescence from ZnO/n<sup>+</sup>-Si Heterojunction

Fabrication and Transport Properties of ZnO∕Nb-1wt%-doped SrTiO3 Epitaxial Heterojunctions

Improvement of electric properties in transparent p-Li 0.07Ni0.93O(111)/n-ZnO(112?0) heterojunction with Mg1-xZnxO intermediate layer

The Underlying Micro-Mechanism of Performance Enhancement of Non-Polar N-Zno/p-algan Ultraviolet Light Emitting Diode with I-Zno Inserted Layer

Enhanced Photoluminescence and Electrical Properties of n-Al-Doped ZnO Nanorods/p-B-Doped Diamond Heterojunction

Fabrication of tunable n-Zn1-xCdxO/p-GaN heterojunction light-emitting diodes

Effects of ZnO Seed Layer Annealing Temperature on the Properties of N-Zno NWs/Al(2)O(3)/p-Si Heterojunction.

Facile fabrication of nano-scale ZnO p-n junction and its blue electroluminescence

Improved electroluminescence from n-ZnO/AlN/p-GaN heterojunction light-emitting diodes

Plasma-Free Nitrogen Doping and Homojunction Light-Emitting Diodes Based on Zno

Zno Light-Emitting Diode Grown By Plasma-Assisted Metal Organic Chemical Vapor Deposition (Vol 88, 173506 2006)

Fabrication of piezotronic ZnO p-n homojunction via metal/oxygen defects modulation for efficient photoelectrocatalysis