Fabrication of piezotronic ZnO p-n homojunction via metal/oxygen defects modulation for efficient photoelectrocatalysis

Ying Chen,Minghua Lin,Zihang Peng,Yumei Shu,Minhua Ai,Li Wang,Xiangwen Zhang,Ji-Jun Zou,Lun Pan
DOI: https://doi.org/10.1016/j.ces.2024.120174
IF: 4.7
2024-04-24
Chemical Engineering Science
Abstract:Homojunction is a viable alternative strategy to realize excellent charge separation for enhancing photoelectrocatalytic performance. However, the feasible regulation of the homojunction interface remains challenging. Herein, a ZnO n-p homojunction with the piezotronic effect is constructed via an in-situ solvothermal method for enhancing photoelectrocatalytic activity. ZnO nanorods are transformed from n-type to p-type ZnO nanoparticles with zinc vacancies, leading to the n-p homojunction. The optimal NPZ-36 exhibits a superior photocurrent density of 1.56 mA/cm 2 at 1.23 V vs. RHE and a high incident photon to current conversion efficiency of 75 % at 360 nm. Impressively, with the merits of inherent piezoelectric and photocatalytic properties of wurtzite ZnO, the piezoelectric-enhanced photoelectrochemical activity originates from the simultaneous promotion of bulk charge transfer and interfacial charge separation in ZnO n-p homojunction. The photocurrent density of NPZ-36–900 can reach to 2.02 mA/cm 2 under the stirring rate of 900 rpm, which is 2.1 times higher than that of pure ZnO photoanode.
engineering, chemical
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