Electrical Characterization of Zno-Based Homojunctions

J. G. Lu,Z. Z. Ye,G. D. Yuan,Y. J. Zeng,F. Zhuge,L. P. Zhu,B. H. Zhao,S. B. Zhang
DOI: https://doi.org/10.1063/1.2245221
IF: 4
2006-01-01
Applied Physics Letters
Abstract:Electrical characteristics have been studied for ZnO p-n and p-i-n homojunctions, with optimization of device structures for improved performance. Capacitance-voltage measurements confirm the formation of abrupt junctions. The current-voltage characteristics exhibit their inherent electrical rectification behavior. The p-ZnO:(N,Al)∕n-ZnO:Al homojunctions fabricated on sapphire substrates combining with the intrinsic ZnO buffer layer have acceptable p-n diode characteristics, with the forward turn-on voltage of 1.4V and the reverse breakdown voltage of 5.3V. By introduction of an intrinsic (Zn,Cd)O layer, the resultant p-ZnO:(N,Al)∕i-(Zn,Cd)O∕n-ZnO:Al homojunction exhibits a high reverse breakdown voltage of ∼18V.
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