Abstract:Recently,ZnO has being paid more attention because of potential applications in ultraviolet light(emitting) diode and laser diode.However,it is very difficult to fabricate p-type ZnO due to serious self-compensation effect,which results in no great progress in p-n homojunction diodes.ZnO heterojunction as another route has been paid attention except the effort on the fabrication of p-ZnO.One attractive heterojunction is ZnO/GaN heterojunction because of similar crystal structure and small lattice mismatch of 1.8%.However,the emission of GaN plays a dominant role in the electroluminescence spectra of ZnO/GaN heterojunction light emitting diode.The main reason was analyzed,the new heterojunction was designed by introduced into MgO i-layer by plasma-enhanced molecular beam epitaxy(P-MBE),and n-ZnO/i-MgO/p-GaN heterojunction light emitting diode was fabricated.The electrical properties of each layer were determined by Hall effect measurement.The ZnO shows n-type conductivity with the carrier concentration of 10~(18) cm~(3) and the resistivity of 0.6 Ω·cm.The hole concentration of p-GaN is about 10~(17) cm~(-3).I-V curve show rectification diode behavior in this heterojunction and have turn-on voltage of 4 V.The bright ultraviolet electroluminescence at 382 nm was observed in the room temperature electroluminescence spectrum.It is concluded that this emission is originated from the(recombination) in ZnO layer by comparing with photoluminescence spectra of ZnO and GaN.According to(Anderson) Model,it is proved that the injection of MgO layer can limit effectively electrons into p-GaN layer in this heterojunction due to very small electron affinity and wide energy band of MgO.It is very hopefull to (realize) the stimulated emission of ZnO using these heterojunctions by the improvement of(crystal) quality and the optimization of device structure.

N-ZnO Nanowires/p-Si Heterojunction with Amorphous Seed Layer Prepared by Atomic Layer Deposition

Microstructure, Wettability and Electrical Properties of N-Zno/zno-sl/p-cu2o Heterojunction

Effects of ZnO Seed Layer Annealing Temperature on the Properties of N-Zno NWs/Al(2)O(3)/p-Si Heterojunction.

Synthesis and Electrical Properties of p + -Si/n-ZnO Nanowires Heterojunction

Znse Nanowire/Si P-N Heterojunctions: Device Construction and Optoelectronic Applications

The Growth And Photovoltaic Properties Of Si Nanowires And Zno Nanowires Hetero-Branched Structures

Preparation and Characterization of Self-Assembled ZnO Nanowire Devices: Nanowire Strain Sensor and Homogeneous P-N Junction.

Fabrication and Electrical Characterization of Nanocrystalline ZnO/Si Heterojunctions

Controllable growth and optical properties of ZnO nanostructures on Si nanowire arrays

Electroluminescence from ZnO/n<sup>+</sup>-Si Heterojunction

The Effect of Postannealing on the Electrical Properties of Well-Aligned N-Zno Nanorods/p-Si Heterojunction

Electrical Transport And Electroluminescence Properties Of N-Zno Single Nanowires

Synthesis and electrical properties of ZnO nanowires.

Synthesis and Electrical Properties of ZnO Nanowires

Study on the Structural and Physical Properties of ZnO Nanowire Arrays Grown Via Electrochemical and Hydrothermal Depositions

N-Zno/i-mgo/p-gan Heterojunction Light-emitting Diodes

Research of ZnO Homojeneous p-n Junction

Inclined and ordered ZnO nanowire arrays developed on non-polar ZnO seed-layer films

Developing Seedless Growth of ZnO Micro/Nanowire Arrays towards ZnO/FeS 2 /CuI P-I-N Photodiode Application

ZnO/ZnTe Core/Shell Nanowire Array Heterojunctions

Structure, Photoluminescence and Wettability Properties of Well Arrayed ZnO Nanowires Grown by Hydrothermal Method.