Abstract:Light emission from semiconductors depends not only on the efficiency of carrier injection and recombination but also extraction efficiency. For ultraviolet emission from high band gap materials such as ZnO, nanowires have higher extraction efficiencies than thin films, but conventional approaches for creating a p-n diode result in low efficiency. We exploited the noncentral symmetric nature of n-type ZnO nanowire/p-type GaN substrate to create a piezoelectric ! potential within the nanowire by applying stress. Because of the polarization of ions in a crystal that has noncentral symmetry, a piezoelectric potential (piezopotential) is created in the crystal under stress. The piezopotential acts as a "gate" voltage to tune the charge transport and enhance carrier injection, which is called the piezo-phototronic effect. We propose that band modification traps free carriers at the interface region in a channel created by the local piezoelectric charges. The emission intensity and injection current at a fixed applied voltage have been enhanced by a factor of 17 and 4, respectively, after applying a 0.093% compressive strain and improved conversion efficiency by a factor of 4.25. This huge enhanced performance is suggested arising from an effective increase in the local "biased voltage" as a result of the band modification caused by piezopotential and the trapping of holes at the interface region in a channel created by the local piezoelectric charges near the interface. Our study can be extended from ultraviolet range to visible range for a variety of optoelectronic devices that are important for today's safe, green, and renewable energy technology.

The Effect of Postannealing on the Electrical Properties of Well-Aligned N-Zno Nanorods/p-Si Heterojunction

Synthetic and Effect of Annealing on the Luminescent Properties of Zno Nanowire

Enhancing Light Emission of Zno Microwire-Based Diodes by Piezo-Phototronic Effect

Effects of ZnO Seed Layer Annealing Temperature on the Properties of N-Zno NWs/Al(2)O(3)/p-Si Heterojunction.

Annealing-Induced Change of Hydrogen Behavior in Zno Nanorods Revealed by Photoluminescence

Enhanced Visible Light Response of ZnO Porous Thin Film by Post-Annealing Treatment

The effect of pre-annealing of sputtered ZnO seed layers on growth of ZnO nanorods through a hydrothermal method

Effect of Annealing on Lattice Strain and Near-Band-edge Emission of ZnO Nanorods

Annealing Effects on the Microstructure and Photoluminescence Properties of Ni-Doped Zno Films

N-ZnO Nanowires/p-Si Heterojunction with Amorphous Seed Layer Prepared by Atomic Layer Deposition

Effects of Annealing Temperature on Excitonic Emissions from Na-Implanted Zno Nanorods

Enhanced Field Emission from Zno Nanorods Via Thermal Annealing in Oxygen

Effect of Annealing on Electrical Properties of Radio-Frequency-sputtered ZnO Films

Effect of multiple-step annealing on the structural, optical and electrical properties of ZnO:In-N films

Luminescent and Structural Characteristics of ZnO Nanorods Fabricated by Postannealing

Effect of annealing of ZnO/Ag double seed layer on the electrical properties of ZnO/Ag/ZnO heterostructure nanorods

Effects of Annealing on the Ferromagnetism and Photoluminescence of Cu-Doped Zno Nanowires

Effects of Nitrogen Annealing on the PN Junction of NiO/ZnO:Al Thin Film

The EL properties of well-aligned n-ZnO nanorods / p-GaN structure

Synthesis and Electrical Properties of p + -Si/n-ZnO Nanowires Heterojunction

The effects of deposition temperature and ambient on the physical and electrical performance of DC-sputtered n -ZnO/ p -Si heterojunction