Synthesis and Electrical Properties of p + -Si/n-ZnO Nanowires Heterojunction

Kaibo Zheng,Xiaoyan Xiang,Huahua Xu,Fang Fang,Haoting Shen,Jing Zhang,Jian Zhu,Chunnuan Ye,Dalin Sun,Guorong Chen
DOI: https://doi.org/10.3969/j.issn.1672-7126.2006.03.001
2006-01-01
Abstract:Vertically aligned ZnO nanowires were synthesized on the p~+ silicon chip by modifying the chemical vapor deposition(CVD) process with a vapor trapping design to produce a heterojunction.Scanning electron microscopy(SEM) and X-ray diffraction(XRD) was used to characterize the morphology and structure of as-obtained heterojunction.The rectifying characteristics of the p-n heterojunction composed of ZnO nanowires and a p~+ silicon chip were observed.The positive turn-on voltage was 0.5 V and the reverse saturation current was 0.02 mA.The value of the ideality factor of the heterojunction is 1.85 in the low bias voltage range of 0 V~0.3 V and 8.36 in the high voltage range of 0.3 V~0.8 V.The reason is the presence of the nonlinear metal-semiconductor contact and defects in the interface of heterojunction.
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