Abstract:Abstract:: Silicon Nanowires (SiNWs), a novel category of nanomaterials, exhibit several outstanding properties, including superior transistor performance, quantum tunneling effects, and remarkable electrical and optical capabilities. These properties are expected to contribute significantly to the development of future nanodevices, such as sensors and optoelectronic components. The potential for device miniaturization with SiNWs is based on their ease of monocrystallization. This leads to a reduced rate of hole-electron complexes and their extensive specific surface area that promotes boundary effects, thereby diminishing conductivity. Characterized by unique structural attributes, SiNWs hold promise for a wide range of applications in various sectors. To date, multiple methods have been established for SiNW fabrication, including solgel, electrochemical, laser ablation, chemical vapor deposition, and thermal vapor deposition techniques. Subsequently, the focus has shifted to the application of SiNWs in electronics, energy, and biomedicine. SiNWs are instrumental in producing high-performance electronic devices, such as field-effect transistors, sensors, and memory units. They also exhibit outstanding photovoltaic properties, making them suitable for high-efficiency solar cell and photocatalyst production. Additionally, SiNWs are poised to make significant contributions to biomedicine, particularly in biosensors, drug delivery systems, and tissue engineering materials. This article provides a concise review of the current status of SiNWs in electronics, sensing devices, and solar cell applications, and their roles in high-performance transistors, biosensors, and solar cells. It concludes with an exploration of the challenges and prospects for SiNWs. In summary, the unique attributes of SiNWs establish them as a versatile nanomaterial with broad applicability. This review offers a comprehensive overview of SiNW research and theoretical insights that may guide similar studies. The insights into recent SiNW research presented here are intended to inform future applications and investigations involving these nanomaterials.

P-N Crossed Nanojunctions from Electroless-Etched Si Nanowires

Fabrication and Electrical and Photosensitive Properties of Silicon Nanowire P-N Homojunctions

Selective etching of n-type silicon in pn junction structure in hydrofluoric acid and its application in silicon nanowire fabrication.

Fabricating Vertically Aligned Sub-20 Nm Si Nanowire Arrays by Chemical Etching and Thermal Oxidation

FABRICATION OF SILICON NANOWIRE (SiNW) ARRAYS AND APPLICATION IN SOLAR CELL

Array-orderly single crystalline silicon nano-wires

N-Type Area of PN Junction Etched in BOE Solution

ZnSe Nanoribbon-Si Nanowire Crossed P-N Nano-Heterojunctions: Electrical Characterizations and Photovoltaic Applications

Monolithic lateral p-n junction GaAs nanowire diodes via selective lateral epitaxy

Top-gated field effect devices using oxidized silicon nanowires

P-Type Conductivity In Silicon Nanowires Induced By Heterojunction Interface Charge Transfer

Wafer-scale high-throughput ordered arrays of Si and Coaxial Si/Si 1- xGex wires: Fabrication, characterization, and photovoltaic application

Nanowire FETs with Nearly Single-Crystalline Si Channels by NiSi2-Seed Initiated Lateral Epitaxial Crystallization (SILEC)

Structural and Optical Characteristics of Silicon Nanowires Fabricated by Wet Chemical Etching

Abrupt degenerately-doped silicon nanowire tunnel junctions

Application of Silicon Nanowires

Wafer-Scale, Highly-Ordered Silicon Nanowires Produced by Step-and-Flash Imprint Lithography and Metal-Assisted Chemical Etching

Single Crystalline PtSi Nanowires, PtSi/Si/PtSi Nanowire Heterostructures, and Nanodevices

Raman spectroscopy and field electron emission properties of aligned silicon nanowire arrays

In-plane Epitaxial Growth of Silicon Nanowires and Junction Formation on Si(100) Substrates.

Nanoelectronic Devices from Nanowire Heterostructures