Abstract:As one of potential photoelectric material, zinc oxide attracted a lot of attentions recently. Such as, its wide band gap (3.37 eV) and high excitonic binding energy of 60 meV make ZnO as a good candidate for developing short wavelength optical devices. Furthermore, the p-doping ZnO can be produced and the p-n structure of ZnO can be formed on the silicon substrate, both of characteristics make ZnO to be compatible with Si-based integrated circuits. Hence, ZnO film has wider application in opto-electronic industries.ZnO films can be easily prepared by reactive sputtering. techniques However, the surface state which caused by damages of bulk silicon surface and lattice mismatch impurity which contaminated in fabrication procedure can produce the level of surface state and deep level in heterojunction. Those levels affect the carries a lot.Generally the level formed by defects can reduce illuminant efficiency, producing non-radiation recombined, but deep level can also become efficient illuminant centre using wide band gap materials. So it is deserved to study deeply of the behavior of ZnO/p-Si heterojunction interface state. The high frequency C-V character can be used to measure the charge of space charge region varied with the voltage variation, this effect of capacitance can be described by differential capacitance. The C-V measurement supplied an important way to research the characteristics of heterojunction. With the help of the measuring C-V and I-V character, we can easily obtain the evidence that interface impurity state and defects in ZnO ∶Al/p-Si interface can have largely influence on electricity property of the heterojunction. We also found it was very useful to reduce the interface state (using) annealing procedure. It was clearly to see that the sample annealed in 800 ℃ had the larger illuminant efficiency.Whether annealed or not, the sample grown by RF sputtering technique can form an abrupt heterojunction, but the character of potential was not the same. As a large number of deep level and surface state level were in interfaces, the C-V curve of sample which was not annealed was aberrance and the I-V curve was exponential with reversing bias voltage. In condition of annealing under 800 ℃, we can observe the influence of interface state was eliminated, and improved rectifying characteristic of heterojunction.

Electrical Characterization of N+-implanted N-Type ZnO Single Crystals: P-N Homojunction and Deep Level Defects

Hydrogen‐assisted Nitrogen‐acceptor Doping in ZnO

Formation and annealing of dislocation loops induced by nitrogen implantation of ZnO

Effects of N Implantation on Defect Formation in ZnO Nanowires

Non-axial NO-VZn shallow acceptor complexes in nitrogen implanted p-type ZnO thin films

P-type Single-Crystalline ZnO Films Obtained by (li, N) Dual Implantation Through Dynamic Annealing Process

Preparation Of P-Type Zno :(Al, N) By A Combination Of Sol-Gel And Ion-Implantation Techniques

Effects of 120keV nitrogen and its fluence on the structural, electrical, and optical properties of ZnO film

Defects and Acceptor Centers in ZnO Introduced by C + -Implantation

The photoluminescence and magnetism of nitrogen-implanted ZnO

Structural and Optical Properties of H Implanted ZnO

Effect of Annealing Atmosphere on Physical Characteristics and Photoluminescence Properties of Nitrogen-Implanted ZnO Thin Films

Structural recovery of ion implanted ZnO nanowires

P-Type Conversion of Zno Thin Films by Plasma Immersion Ion Implantation

Contributions of <formula formulatype="inline"><tex Notation="TeX">$\hbox{N}^{+}$</tex></formula>, <formula formulatype="inline"><tex Notation="TeX">$\hbox{N}_{2}^{+}$</tex></formula>, <formula formulatype="inline"><tex Notation="TeX">$ \hbox{NO}^{+}$</tex></formula> Ion Implantation to p-Type Conve

Determination of Na acceptor level in Na + ion-implanted ZnO single crystal

Contact Characteristics of ZnO :Al/p-Si

Deep-level Emissions Influenced by O and Zn Implantations in ZnO

Effects of Thermal Annealing on the Properties of N-Implanted Zns Films

Physical characteristics and photoluminescence properties of phosphorous-implanted ZnO thin films

Contributions of , , Ion Implantation to p-Type Conversion of ZnO:Al Films