Abstract:Although zinc oxide is a promising material for the fabrication of short wavelength optoelectronic devices, p-type doping is a step that remains challenging for the realization of diodes. Out of equilibrium methods such as ion implantation are expected to dope ZnO successfully provided that the non-radiative defects introduced by implantation can be annealed out. In this study, ZnO substrates are implanted with nitrogen ions, and the extended defects induced by implantation are studied by transmission electron microscopy and X-ray diffraction (XRD), before and after annealing at 900^{\circ}C. Before annealing, these defects are identified to be dislocation loops lying either in basal planes in high N concentration regions, or in prismatic planes in low N concentration regions, together with linear dislocations. An uniaxial deformation of 0.4% along the c axis, caused by the predominant basal loops, is measured by XRD in the implanted layer. After annealing, prismatic loops disappear while the density of basal loops decreases and their diameter increases. Moreover, dislocation loops disappear completely from the sub-surface region. XRD measurements show a residual deformation of only 0.05% in the implanted and annealed layer. The fact that basal loops are favoured against prismatic ones at high N concentration or high temperature is attributed to a lower stacking fault energy in these conditions. The coalescence of loops and their disappearance in the sub-surface region are ascribed to point defect diffusion. Finally, the electrical and optical properties of nitrogen-implanted ZnO are correlated with the observed structural features.

Effects of 120keV nitrogen and its fluence on the structural, electrical, and optical properties of ZnO film

Effect of Nucleation and Growth Kinetics on the Electrical and Optical Properties of Undoped ZnO Films

Effect of Solution Concentrations on Crystal Structure, Surface Topographies and Photoluminescence Properties of ZnO Thin Films

Structural, Optical and Half-Metallic Properties of Mn and As Co-Implanted ZnO Thin Films

Annealing Effects on the Microstructure and Photoluminescence Properties of Ni-Doped Zno Films

Electrical Characterization of N+-implanted N-Type ZnO Single Crystals: P-N Homojunction and Deep Level Defects

Effect of multiple-step annealing on the structural, optical and electrical properties of ZnO:In-N films

P-type Single-Crystalline ZnO Films Obtained by (li, N) Dual Implantation Through Dynamic Annealing Process

Structural, electrical and optical properties of N-doped ZnO films synthesized by SS-CVD

Optical and Electrical Properties of N-doped ZnO and Fabrication of Thin-Film Transistors

Study on the Hall-effect and Photoluminescence of N-doped P-Type ZnO Thin Films

Synthesis and Properties of P-Type Nitrogen-Doped ZnO Thin Films by Pulsed Laser Ablation of a Zn-rich Zn3N2 Target

Effects of Nitrogen Doping and Illumination on Lattice Constants and Conductivity Behavior of Zinc Oxide Grown by Magnetron Sputtering

Nitrogen Binding Behavior in ZnO Films with Time-Resolved Cathodoluminescence

Effect of Na Doping Content on the Structural and Electrical Properties of ZnO∶Nax Films

Formation and annealing of dislocation loops induced by nitrogen implantation of ZnO

Effect of Annealing Temperature on the Optical and Electrical Properties of N Doped MgZnO Films

Optical properties of p-type ZnO doped by lithium and nitrogen

Annealing effect on optical properties of ZnO films fabricated by cathodic electrodeposition

Non-axial NO-VZn shallow acceptor complexes in nitrogen implanted p-type ZnO thin films

Influence of Annealing Atmosphere on Microstructure and Optical Properties of ZnO Thin Films