Abstract:ZnO nanowires were successfully fabricated by using the hydrothermal method in the existence of the poly ethylene glycol (PEG) with the molecular weight of 200. The experimental results exhibit that the ZnO nanowires with the diameter of ~30nm and the length of ten micrometers. PL spectra show a weak ultraviolet emission and an intense broad visible emission band for as-grown and annealed samples. These visible emission bands exhibit red-shifts from green (545nm) to yellow (580nm) and blue-shifts from yellow (580nm) to green (520nm) by annealing at aerobic or anaerobic environment, it indicates that the defect types are changed by annealed at different environment. Additionally, the red-shifts (520nm) and blue-shifts (580) can match up the bimodal lorentzian fitting (520nm and 583nm) of as-growth, which suggest that the visible emission band (545nm) is closely related to oxygen defects. The oxygen atomic can enter into the crystal lattice of ZnO and decrease the oxygen vacancy in air or oxygen, whereas, more oxygen vacancy defects is gave rise in vacuum annealed. We guess the energy levels of the intrinsic defects in ZnO nanowire maybe like that: the electrons of Zni defects compound with holes of VZn, Oi and OZn levels and conform to the yellow emission, and the green emission corresponds to the electron transition from the association defects deep donor level to the valence band.

Effects of Nitrogen Doping and Illumination on Lattice Constants and Conductivity Behavior of Zinc Oxide Grown by Magnetron Sputtering

Synthetic and Effect of Annealing on the Luminescent Properties of Zno Nanowire

P-Type Conductivity and Stability of Nitrogen-Doped Zinc Oxide Prepared by Magnetron Sputtering

Hydrogen‐assisted Nitrogen‐acceptor Doping in ZnO

Effect of Solution Concentrations on Crystal Structure, Surface Topographies and Photoluminescence Properties of ZnO Thin Films

Roles of Hydrogen and Nitrogen in P-Type Doping of ZnO

The Effects of Oxygen Partial Pressure and Substrate Temperature on the Structural and Optical Properties of Zno Films

Properties of N-doped ZnO thin films in annealing process

Optical and Electrical Properties of N-doped ZnO and Fabrication of Thin-Film Transistors

Effect of Annealing on Conductivity Behavior of Undoped Zinc Oxide Prepared by Rf Magnetron Sputtering

Annealing Effects on the Microstructure and Photoluminescence Properties of Ni-Doped Zno Films

Nitrogen Binding Behavior in ZnO Films with Time-Resolved Cathodoluminescence

Dominant Factor Determining the Conduction-Type of Nitrogen-Doped Zno Film

Synthesis and Properties of P-Type Nitrogen-Doped ZnO Thin Films by Pulsed Laser Ablation of a Zn-rich Zn3N2 Target

Improved P-Type Conductivity and Acceptor States in N-Doped Zno Thin Films

Formation of P-Type Mgzno by Nitrogen Doping

Effect of multiple-step annealing on the structural, optical and electrical properties of ZnO:In-N films

Effects of 120keV nitrogen and its fluence on the structural, electrical, and optical properties of ZnO film

Effects of N Doping on Phase Transition and Visible-Light Photocatalytic Activity of ZnO/Zinc Titanate Core–Shell Nanorod Arrays

Optical properties of p-type ZnO doped by lithium and nitrogen

Stability of P-type Conductivity in Nitrogen-Doped MgZnO Thin Film