Abstract:Low-power, flexible, and integrated photodetectors have attracted increasing attention due to their potential applications of photosensing, astronomy, communications, wearable electronics, etc. Herein, the samples of ZnO microwires having p-type (Sb-doped ZnO, ZnO:Sb) and n-type (Ga-doped ZnO, ZnO:Ga) conduction properties were synthesized individually. Sequentially, a p-n homojunction vertical structure photodiode involving a single ZnO:Sb microwire crossed with a ZnO:Ga microwire, which can detect ultraviolet light signals, was constructed. When exposed under 360 nm light illumination at −0.1 V, the proposed photodiode reveals pronounced photodetection features, including a largest on/off ratio of 10 5 , responsivity of 2.3 A/W, specific detectivity of ∼6.5×10 13 Jones, noise equivalent power of 4.8×10 −15 W Hz −1/2 , and superior photoelectron conversion efficiency of ∼7.8 % . The photodiode also exhibits a fast response/recovery time of 0.48 ms/9.41 ms. Further, we propose a facile and scalable construction scheme to integrate a p- ZnO : Sb ⊗n- ZnO : Ga microwires homojunction component into a flexible, array-type detector, which manifests significant flexibility and electrical stability with insignificant degradation. Moreover, the as-constructed array unit can be integrated into a practical photoimaging system, which demonstrates remarkable high-resolution single-pixel imaging capability. The results represented in this work may supply a workable approach for developing low-dimensional ZnO-based homojunction optoelectronic devices with low-consumption, flexible, and integrated characteristics.

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ZnO nanowires based UV photodiodes

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