Abstract:Low-power, flexible, and integrated photodetectors have attracted increasing attention due to their potential applications of photosensing, astronomy, communications, wearable electronics, etc. Herein, the samples of ZnO microwires having p-type (Sb-doped ZnO, ZnO:Sb) and n-type (Ga-doped ZnO, ZnO:Ga) conduction properties were synthesized individually. Sequentially, a p-n homojunction vertical structure photodiode involving a single ZnO:Sb microwire crossed with a ZnO:Ga microwire, which can detect ultraviolet light signals, was constructed. When exposed under 360 nm light illumination at −0.1 V, the proposed photodiode reveals pronounced photodetection features, including a largest on/off ratio of 10 5 , responsivity of 2.3 A/W, specific detectivity of ∼6.5×10 13 Jones, noise equivalent power of 4.8×10 −15 W Hz −1/2 , and superior photoelectron conversion efficiency of ∼7.8 % . The photodiode also exhibits a fast response/recovery time of 0.48 ms/9.41 ms. Further, we propose a facile and scalable construction scheme to integrate a p- ZnO : Sb ⊗n- ZnO : Ga microwires homojunction component into a flexible, array-type detector, which manifests significant flexibility and electrical stability with insignificant degradation. Moreover, the as-constructed array unit can be integrated into a practical photoimaging system, which demonstrates remarkable high-resolution single-pixel imaging capability. The results represented in this work may supply a workable approach for developing low-dimensional ZnO-based homojunction optoelectronic devices with low-consumption, flexible, and integrated characteristics.

ZnO nanowires based UV photodiodes

Homojunction Photodiodes Based on Sb-Doped P-Type Zno for Ultraviolet Detection

High-speed Ultraviolet-Visible-near Infrared Photodiodes Based on P-Zns Nanoribbon–n-Silicon Heterojunction

ZnO Nanorod Arrays As P-N Heterojunction Ultraviolet Photodetectors

High-performance, low-power and flexible ultraviolet photodetector based on crossed ZnO microwires p-n homojunction

Single ZnO nanowire/p-type GaN heterojunctions for photovoltaic devices and UV light-emitting diodes.

Ultraviolet Electroluminescence from Zno/P-Si Heterojunctions

ZnO Homojunction UV Photodetector Based on Solution-Grown Sb-doped P-Type ZnO Nanorods and Pure N-Type ZnO Nanorods

Fabrication of P-Type Znse:Sb Nanowires for High-Performance Ultraviolet Light Photodetector Application

Low-temperature-grown P-N ZnO Nanojunction Arrays As Rapid and Self-Driven UV Photodetectors.

A self-powered ultraviolet photodiode using an amorphous InGaZnO/p-silicon nanowire heterojunction

Electroluminescence from ZnO Nanowires with a P-Zno Film/n-Zno Nanowire Homojunction

Study on n-ZnO/p-Si Heterojunction UV Enhanced Photoelectric Detectors

A self-powered ZnO nanoarrays/GaN heterojunction ultraviolet photodetectors grown on Si(111) substrate

Polarity-Controlled Ultraviolet/Visible Light Zno Nanorods/P-Si Photodetector

Efficient UV Photodetector Based on Heterojunction of N -Zno Nanorods/ P -Diamond Film

Preparation and Photodetection Property of ZnO Nanorods/ZnCo2O4 Nanoplates Heterojunction

Switch type PANI/ZnO core-shell microwire heterojunction for UV photodetection

Synthesis, Characterization and UV Photodetector Application of Sb-doped ZnO Nanowires

Controllable Synthesis and Optical,Electrical Properties of ZnO Nanotube Arrays/p-Si Hetero-structures

Near UV LEDs Made with in Situ Doped P-N Homojunction ZnO Nanowire Arrays