Abstract:Light emission from semiconductors depends not only on the efficiency of carrier injection and recombination but also extraction efficiency. For ultraviolet emission from high band gap materials such as ZnO, nanowires have higher extraction efficiencies than thin films, but conventional approaches for creating a p-n diode result in low efficiency. We exploited the noncentral symmetric nature of n-type ZnO nanowire/p-type GaN substrate to create a piezoelectric ! potential within the nanowire by applying stress. Because of the polarization of ions in a crystal that has noncentral symmetry, a piezoelectric potential (piezopotential) is created in the crystal under stress. The piezopotential acts as a "gate" voltage to tune the charge transport and enhance carrier injection, which is called the piezo-phototronic effect. We propose that band modification traps free carriers at the interface region in a channel created by the local piezoelectric charges. The emission intensity and injection current at a fixed applied voltage have been enhanced by a factor of 17 and 4, respectively, after applying a 0.093% compressive strain and improved conversion efficiency by a factor of 4.25. This huge enhanced performance is suggested arising from an effective increase in the local "biased voltage" as a result of the band modification caused by piezopotential and the trapping of holes at the interface region in a channel created by the local piezoelectric charges near the interface. Our study can be extended from ultraviolet range to visible range for a variety of optoelectronic devices that are important for today's safe, green, and renewable energy technology.

Improvement of electric properties in transparent p-Li 0.07Ni0.93O(111)/n-ZnO(112?0) heterojunction with Mg1-xZnxO intermediate layer

Enhancing Light Emission of Zno Microwire-Based Diodes by Piezo-Phototronic Effect

Largely Enhanced Efficiency In Zno Nanowire/P-Polymer Hybridized Inorganic/Organic Ultraviolet Light-Emitting Diode By Piezo-Phototronic Effect

Microstructure, Wettability and Electrical Properties of N-Zno/zno-sl/p-cu2o Heterojunction

Transparent pn junction of Mg:NiO/ZnO/SnO 2 via potential regulation and carrier injection of ZnO transition layer

Electroluminescent and Carrier Transport Mechanisms of MgxZn1−xO∕Si Heterojunctions

Fabrication and Characterization of P-Zno/n-zn0.8cd0.2o/n-zno Heterojunction

Improvement of UV electroluminescence of n-ZnO/p-GaN heterojunction LED by ZnS interlayer

Ultraviolet Electroluminescence from Zno/P-Si Heterojunctions

The Underlying Micro-Mechanism of Performance Enhancement of Non-Polar N-Zno/p-algan Ultraviolet Light Emitting Diode with I-Zno Inserted Layer

Defect-Related White-Light Emission from Zno in an N-Mg0.2zn0.8o/N-Zno/Sio (X) Heterostructure on N-Si

Electroluminescence from ZnO/n<sup>+</sup>-Si Heterojunction

Enhanced Electroluminescence from Silicon-Based Light-Emitting Devices with Mg0.4zn0.6o/Erbium-Doped Zno Heterostructures by Using Ito/Moo3 Combined Anode

Fabrication and Transport Properties of ZnO∕Nb-1wt%-doped SrTiO3 Epitaxial Heterojunctions

Fabrication of transparent p-CuI/n-ZnO heterojunction with excellent ideality factor

Fabrication and emission properties of a n-ZnO/p-GaN heterojunction light-emitting diode

Recent progress in ZnO-based heterojunction ultraviolet light-emitting devices

Improved Photoelectrical Properties of N-Zno/P-Si Heterojunction by Inserting an Optimized Thin Al2o3 Buffer Layer

Efficient Quantum Dot Light-Emitting Diodes with a Zn0.85Mg0.15O Interfacial Modification Layer.

Improved light emission from n-ZnO/p-Si heterojunction with HfO2 as an electron blocking layer