Abstract:ZnO, as a potential candidate, has attracted extensive attention in optoelectronics, energy systems and other fields. However, the wide bandgap of ZnO severely limits its application in a wide range of photoresponse, and preparing p-type ZnO is another stumbling block that hinders the development of ZnO-based devices. Here, a high-performance photodetector with a wider spectral detection range from UV–vis to NIR builds on the structure of p-ZnO/Al2O3/n-Si is fabricated. The PD exhibits a marked sensitivity (75,000%), excellent responsivity (13.80 A W−1, 365 nm), high specific detectivity (> 1012 Jones), fast response (< 100 μs), which indicates that inserting an insulated Al2O3 layer between an n-type semiconductor and a p-type semiconductor is a fruitful method to enhance carriers separation and collection efficiency. The carrier transport mechanism at the interface of PDs with different Al2O3 thickness is based on the quantum mechanical of Fowler-Nordheim tunneling or direct tunneling. Additionally, the overall signal levels of the photodetector could be further optimized using the piezo-phototronic effect. This study demonstrates an alternative route to implement high-efficiency photodetectors with a broader response range and provides an in-depth understanding of regulating carrier tunneling of the p-ZnO/Al2O3/n-Si heterojunction using the piezo-phototronic effect.

Improved Photoelectrical Properties of N-Zno/P-Si Heterojunction by Inserting an Optimized Thin Al2o3 Buffer Layer

An all-sputtered photovoltaic ultraviolet photodetector based on co-doped CuCrO2 and Al-doped ZnO heterojunction

Junction Properties of Nitrogen-Doped Zno Thin Films

Effects of ZnO Seed Layer Annealing Temperature on the Properties of N-Zno NWs/Al(2)O(3)/p-Si Heterojunction.

Ultrathin Al2O3 modifying the interface of ZnO nanorod arrays/Cu2O heterojunction for enhanced photoelectrochemical performance

The Underlying Micro-Mechanism of Performance Enhancement of Non-Polar N-Zno/p-algan Ultraviolet Light Emitting Diode with I-Zno Inserted Layer

Improved N–Al Codoped P-Type ZnO Thin Films by Introduction of a Homo-Buffer Layer

Piezo-phototronic effect enhanced performance of a p-ZnO NW based UV–Vis–NIR photodetector

Fabrication and Characterization of P-Zno/n-zn0.8cd0.2o/n-zno Heterojunction

Improvement of electric properties in transparent p-Li 0.07Ni0.93O(111)/n-ZnO(112?0) heterojunction with Mg1-xZnxO intermediate layer

Improved electroluminescence from n-ZnO/AlN/p-GaN heterojunction light-emitting diodes

Improvement of UV electroluminescence of n-ZnO/p-GaN heterojunction LED by ZnS interlayer

Band Alignment and Interfacial Structure of ZnO/Si Heterojunction with Al2O3 and HfO2 As Interlayers

Quasi-vertical ε-Ga2O3 solar-blind photodetectors grown on p-Si substrates with Al2O3 buffer layer by metalorganic chemical vapor deposition

Investigating the MgAl-Doping N-Type ZnO(MgAlZnO) Metal Oxide Film Used As the ITO Cathode Buffer Layer in the Inverted Polymer Solar Cell

The study of optical-electrical properties of ZnO(AZO)/Si heterojunction

Synthesis and Characterization of Al–N Codoped P-Type ZnO Epitaxial Films Using High-Temperature Homo-Buffer Layer

p-type ZnO films by codoping of nitrogen and aluminum and ZnO-based p–n homojunctions

Photoresponse Enhancement of Cu2O Solar Cell with Sulfur-Doped ZnO Buffer Layer to Mediate the Interfacial Band Alignment

Improved light emission from n-ZnO/p-Si heterojunction with HfO2 as an electron blocking layer

Photoelectric Characteristics of n-ZnO/p-Si Heterojunction Photodetector