Abstract:N-doped and (Al,N)-codoped ZnO films were synthesized by oxidative annealing of (Zn + Zn 3 N 2 ) films, which were fabricated by reactive magnetron sputtering. Both n - and p -type conductions were obtained in these ZnO:N and ZnO:AlN films. Optimal oxidation treatments for achieving p -type ZnO are annealing at 400–600 °C for 10–60 min, depending on the film thickness and morphology. The electric properties were found to be very sensitive to the annealing conditions and film structure. As-deposited (Zn + Zn 3 N 2 ) films with and without Al addition had carrier concentrations of 10 21 –10 22 cm −3 . After conversion to ZnO, the n -type films had a carrier concentrations up to 10 19 cm −3 , whereas the p -type ZnO:N films had hole concentrations of 10 14 –10 16 cm −3 . (Al,N)-codoping increased the hole concentration of p -type film to 10 18 cm −3 despite a decrease in Hall mobility. The photoluminescence properties of the p -type ZnO films were also investigated. The synthesis of p -type ZnO:AlN by oxidative annealing is believed to provide an alternative approach to realize p -type conduction in codoped ZnO film by using N 2 as the N source.

Improved N–Al Codoped P-Type ZnO Thin Films by Introduction of a Homo-Buffer Layer

Synthesis and Characterization of Al–N Codoped P-Type ZnO Epitaxial Films Using High-Temperature Homo-Buffer Layer

p-type ZnO films by codoping of nitrogen and aluminum and ZnO-based p–n homojunctions

Reproducibility and Stability of N–Al Codoped P -Type ZnO Thin Films

Preparation and Characteristic of P-Type ZnO Films by Al–N Codoping Technique

Preparation of P-Type ZnO Films by Al+N-codoping Method

P -Type Conduction in N–Al Co-Doped ZnO Thin Films

Al–N codoping and p-type conductivity in ZnO using different nitrogen sources

p-Type conduction in Al–N co-doped ZnO films

Effects of Al Content on Properties of Al–N Codoped ZnO Films

Formation of p-type ZnMgO thin films by In–N codoping method

Deposition of Al-N Co-Doped P-Type Zn0.95Mg0.05O Thin Films

Control and Improvement of P-Type Conductivity in Indium and Nitrogen Codoped Zno Thin Films

Dependence of properties of N?Al codoped p-type ZnO thin films on growth temperature

Preparation and Characteristics of p-Type ZnO Films Using Al and N Codoping Method by DC Reactive Magnetron Sputtering

Improved Photoelectrical Properties of N-Zno/P-Si Heterojunction by Inserting an Optimized Thin Al2o3 Buffer Layer

Effect of the ZnO buffer layer thickness on AZO film properties

Achieve p -type conduction in N-doped and (Al,N)-codoped ZnO thin films by oxidative annealing zinc nitride precursors

Fabrication of p-type ZnMgO codoped with Al and N using dc reactive magnetron sputtering

Electrical and Optical Properties of Al–N Co-Doped P-Type Zinc Oxide Films