Abstract:p-type ZnO has attracted more and more attention because it is necessary to fabricate ZnO devices based on current injection. More and more improvements on p-type ZnO and p-n junctions are reported. However, electroluminescence in these works was rarely observed. We have already succeed in fabricating a ZnO p-n junction LED on sapphire substrate by using activated NO plasma. Here, N_2 was used as the acceptor dopant and O_2 was used as assistant gas as well as oxygen source. Emission spectra of the N_2-O_2 plasma were monitored in situ to adjust parameters timely. Electronics measurements of the as-grown p-type ZnO on sapphire shows a carrier concentration of 1.2×10~ 18 cm~ -3 and mobility approach to 1 cm~2·V~ -1 ·s~ -1 . The LED based on p-n junction shows a certain rectification effect and the turn on voltage is 3.10 V, which is consistent with the bandgap of ZnO. Electroluminescence spectra shows two bands: one is at 420 nm, from donor- acceptor pairs; and the other ranges from 500 to 700 nm, which is attributed to the emissions from point defects in ZnO.

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Room Temperature Electroluminescence from the N-Zno/P-Gan Heterojunction Device Grown by Mocvd

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Room Temperature Blue-UV Electroluminescence from ZnO Light-Emitting Diodes Involving Na-Doped P-Type ZnO and ZnO/ZnMgO Multi-Quantum Wells

Room Temperature Electroluminescence from the N-Znmgo/zno/p-znmgo Heterojunction Device Grown by Ultrasonic Spray Pyrolysis

Electroluminescence from Zno-Nanorod-Based Double Heterostructured Light-Emitting Diodes

Electroluminescence of the P-Zno:As/n-zno LEDs Grown on ITO Glass Coated with GaAs Interlayer

Electroluminescence from ZnO/n<sup>+</sup>-Si Heterojunction

Electroluminescence from A Zno Homojunction Device Grown by Pulsed Laser Deposition

Excitonic Electroluminescence from ZnO-based Heterojunction Light Emitting Diodes

Blue-Yellow Zno Homostructural Light-Emitting Diode Realized By Metalorganic Chemical Vapor Deposition Technique

Room Temperature Electroluminescence from the ZnO Homojunction Grown on an N+-Si Substrate by Metal–organic Chemical Vapor Deposition

P-Type ZnO and ZnO P-N Homojunction LED by Using Activated N_2 Doping

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Ultraviolet Electroluminescence from ZnO-based Light-Emitting Diode with P-Zno:N/n-gan:si Heterojunction Structure

Ultraviolet Electroluminescence from N-Zno:Ga/p-zno:n Homojunction Device on Sapphire Substrate with P-Type ZnO:N Layer Formed by Annealing in N2O Plasma Ambient

Fabrication and Characterization of High Quality N-Zno/p-gan Heterojunction Light Emission Diodes

Fabrication and Emission Properties of a N-Zno/p-gan Heterojunction Light-Emitting Diode

Nanointerlayer Induced Electroluminescence Transition from Ultraviolet- to Red-Dominant Mode for N-Mn:Zno/N-Gan Heterojunction

Electroluminescence from N-Zno/p-zno : Sb Homojunction Light Emitting Diode on Sapphire Substrate with Metal–organic Precursors Doped P-Type ZnO Layer Grown by MOCVD Technology

Zno:Sb/Zno:Ga Light Emitting Diode on C-Plane Sapphire by Molecular Beam Epitaxy