Electrical, Optical, and Field-Emission Properties of Phosphorus-Doped ZnO Nanowire Arrays and P-N Homojunction of ZnO nanowires

H. von Wenckstern,G. Benndorf,S. Heitsch,J. Sann,M. Brandt,H. Schmidt,J. Lenzner,M. Lorenz,A.Y. Kuznetsov,B.K. Meyer,M. Grundmann

DOI: https://doi.org/10.1149/ma2008-02/36/2353

2008-01-01

ECS Meeting Abstracts

Abstract:Abstract not Available.

What problem does this paper attempt to address?

Synthetic and Effect of Annealing on the Luminescent Properties of Zno Nanowire

Zhao-Jun Mo,Zhi-Hong Hao,Hai-Zhen Wu,Qing Yang,Ping Zhuo,Hui Yang,Jian-Ping Xu,Xiao-Song Zhang,Lan Li

DOI: https://doi.org/10.1016/j.jlumin.2016.02.010

IF: 3.6

2016-01-01

Journal of Luminescence

Abstract:ZnO nanowires were successfully fabricated by using the hydrothermal method in the existence of the poly ethylene glycol (PEG) with the molecular weight of 200. The experimental results exhibit that the ZnO nanowires with the diameter of ~30nm and the length of ten micrometers. PL spectra show a weak ultraviolet emission and an intense broad visible emission band for as-grown and annealed samples. These visible emission bands exhibit red-shifts from green (545nm) to yellow (580nm) and blue-shifts from yellow (580nm) to green (520nm) by annealing at aerobic or anaerobic environment, it indicates that the defect types are changed by annealed at different environment. Additionally, the red-shifts (520nm) and blue-shifts (580) can match up the bimodal lorentzian fitting (520nm and 583nm) of as-growth, which suggest that the visible emission band (545nm) is closely related to oxygen defects. The oxygen atomic can enter into the crystal lattice of ZnO and decrease the oxygen vacancy in air or oxygen, whereas, more oxygen vacancy defects is gave rise in vacuum annealed. We guess the energy levels of the intrinsic defects in ZnO nanowire maybe like that: the electrons of Zni defects compound with holes of VZn, Oi and OZn levels and conform to the yellow emission, and the green emission corresponds to the electron transition from the association defects deep donor level to the valence band.
Phosphorus Doped Zn(1-x)Mg(x)O Nanowire Arrays.

S. S. Lin,J. I. Hong,J. H. Song,Y. Zhu,H. P. He,Z. Xu,Y. G. Wei,Y. Ding,R. L. Snyder,Z. L. Wang

DOI: https://doi.org/10.1021/nl902067a

IF: 10.8

2009-01-01

Nano Letters

Abstract:We demonstrate the growth of phosphorus doped Zn(1-x)Mg(x)O nanowire (NW) using pulsed laser deposition. For the first time, p-type Zn(0.92)Mg(0.08)O:P NWs are likely obtained in reference to atomic force microscopy based piezoelectric output measurements, X-ray photoelectron spectroscopy, and the transport property between the NWs and a n-type ZnO film. A shallow acceptor level of approximately 140 meV is identified by temperature-dependent photoluminescence. A piezoelectric output of 60 mV on average has been received using the doped NWs. Besides a control on NW aspect ratio and density, band gap engineering has also been achieved by alloying with Mg to a content of x = 0.23. The alloyed NWs with controllable conductivity type have potential application in high-efficiency all-ZnO NWs based LED, high-output ZnO nanogenerator, and other optical or electrical devices.
Simulation of P-N Junction Properties of Nanowires and Nanowire Arrays

Jun Hu,Yang Liu,Alex Maslov,Cun-Zheng Ning,Robert Dutton,Sung-Mo Kang

DOI: https://doi.org/10.1117/12.701210

2007-01-01

Abstract:The unique properties of semiconductor nanowires pose promising applications in optoelectronics such as photo-detectors and lasers. Owing to the increased surface/volume ratio, nanowire-based p-n junctions exhibit qualitatively different properties from those of bulk cases. These include weaker electrostatic screening and stronger fringe field effects. This work employs a general device simulator, PROPHET, to numerically investigate the unique electrical properties of p-n junctions in single nanowires and nanowire arrays. The implications of such effects in nanowire-based photo-detector design are also examined.
Electrical And Photoresponse Properties Of An Intramolecular P-N Homojunction In Single Phosphorus-Doped Zno Nanowires

Ping-Jian Li,Zhi-Min Liao,Xin-Zheng Zhang,Xue-Jin Zhang,Hui-Chao Zhu,Jing-Yun Gao,K. Laurent,Y. Leprince-Wang,N. Wang,Da-Peng Yu

DOI: https://doi.org/10.1021/nl803443x

IF: 10.8

2009-01-01

Nano Letters

Abstract:The single-crystal n-type and p-type ZnO nanowires (NWs) were synthesized via a chemical vapor deposition method, where phosphorus pentoxide was used as the dopant source. The electrical and photoluminescence studies reveal that phosphorus-doped ZnO NWs (ZnO:P NWs) can be changed from n-type to p-type with increasing P concentration. Futhermore, we report for the first time the formation of an intramolecular p-n homojunction in a single ZnO:P NW. The p-n junction diode has a high on/off current ratio of 2.5 x 10(3) and a low forward turn-on voltage of similar to 1.37 V. Finally, the photoresponse properties of the diode were investigated under UV (325 nm) excitation In air at room temperature. The high photocurrent/dark current ratio (3.2 x 10(4)) reveals that the diode has a potential as extreme sensitive UV photodetectors.
Near UV LEDs Made with in Situ Doped P-N Homojunction ZnO Nanowire Arrays

Min-Teng Chen,Ming-Pei Lu,Yi-Jen Wu,Jinhui Song,Chung-Yang Lee,Ming-Yen Lu,Yu-Cheng Chang,Li-Jen Chou,Zhong Lin Wang,Lih-Juann Chen

DOI: https://doi.org/10.1021/nl101907h

IF: 10.8

2010-01-01

Nano Letters

Abstract:Catalyst-free p-n homojunction ZnO nanowire (NW) arrays in which the phosphorus (P) and zinc (Zn) served as p- and n-type dopants, respectively, have been synthesized for the first time by a controlled in situ doping process for fabricating efficient ultraviolet light-emitting devices. The doping transition region defined as the width for P atoms gradually occupying Zn sites along the growth direction can be narrowed down to sub-50 nm. The cathodoluminescence emission peak at 340 nm emitted from n-type ZnO:Zn NW arrays is likely due to the Burstein-Moss effect in the high electron carrier concentration regime. Further, the electroluminescence spectra from the p-n ZnO NW arrays distinctively exhibit the short-wavelength emission at 342 nm and the blue shift from 342 to 325 nm is observed as the operating voltage further increasing. The ZnO NW p-n homojunctions comprising p-type segment with high electron concentration are promising building blocks for short-wavelength lighting device and photoelectronics.
ZnO Nanowire and $\hbox{ws}_{2}$ Nanotube Electronics

Husnu Emrah Unalan,Yang,Yan Zhang,Pritesh Hiralal,Daniel Kuo,Sharvari Dalal,Tim Butler,Seung Nam Cha,Jae Eun Jang,Konstantina Chremmou,Georgios Lentaris,Di Wei,Rital Rosentsveig,Kenichi Suzuki,Hidetoshi Matsumoto,Mie Minagawa,Yasuhiko Hayashi,Manish Chhowalla,Akihiko Tanioka,William I. Milne,Reshef Tenne,Gehan A. J. Amaratunga

DOI: https://doi.org/10.1109/ted.2008.2005166

IF: 3.1

2008-01-01

IEEE Transactions on Electron Devices

Abstract:In this paper, we report on the synthesis and applications of semiconducting nanostructures. Nanostructures of interest were zinc oxide (ZnO) nanowires and tungsten disulfide (WS2) nanotubes where transistors/phototransistors and photovoltaic (PV) energy conversion cells have been fabricated. ZnO nanowires were grown with both high- and low-temperature approaches, depending on the application. Individual ZnO nanowire side-gated transistors revealed excellent performance with a field-effect mobility of 928 cm(2)/V . s. ZnO networks were proposed for large-area macroelectronic devices as a less lithographically intense alternative to individual nanowire transistors where mobility values in excess of 20 cm(2)/V . s have been achieved. Flexible PV devices utilizing ZnO nanowires as electron acceptors and for photoinduced charge separation and transport have been presented. Phototransistors were fabricated using individual WS2 nanotubes, where clear sensitivity to visible light has been observed. The results presented here simply reveal the potential use of inorganic nanowires/tubes for various optoelectronic devices.
Optical and Electrical Performance Of, Sno2 Capped Zno Nanowire Arrays

Liang Shi,Yeming Xu,Suikong Hark,Yang Liu,Sheng Wang,Lian-mao Peng,Kawai Wong,Quan Li

DOI: https://doi.org/10.1021/nl0707959

IF: 10.8

2007-01-01

Nano Letters

Abstract:Two-junction-nanowire arrays (SnO2 capped ZnO nanowire arrays on Zn substrate) are synthesized using a two-step-solution-reaction. The bare single crystalline ZnO nanowires give reasonably intense band edge luminescence but also strong green emission likely due to surface defects. The SnO2 capping treatment not only introduces caps on the tip of the ZnO nanowires but also partially passivates the nanowire surfaces, leading to improved near band edge emission and the suppression of the defect luminescence. The nanowire array configuration allows a straight forward electrical measurement on the single nanowire junction (Zn-ZnO-SnO2). The I-V results indicate that a little barrier exists in between the Zn substrate and the nanowire. The observation of more complicated electrical behaviors of the two-junction system (Zn/ZnO/SnO2) discloses the nonuniform doping of the SnO2 cap, which is consistent with the EDX compositional analysis.
Optical and Electrical Properties of Ga-Doped ZnO Nanowire Arrays on Conducting Substrates

Minjie Zhou,Haojun Zhu,Yang Jiao,Yangyan Rao,Suikong Hark,Yang Liu,Lianmao Peng,Quan Li

DOI: https://doi.org/10.1021/jp901025a

2009-01-01

The Journal of Physical Chemistry C

Abstract:Large area Ga-doped ZnO nanowire arrays have been vertically grown on transparent conducting substrate by a simple chemical vapor deposition method. Experimental results reveal the well-aligned array morphology and the uniform Ga concentration in these nanowires with individual nanowires of single crystallinity. In particular, direct I−V measurements performed on a single nanowire on indium−tin oxide (ITO) substrate disclose both the low resistivity of nanowire and its Ohmic contact with the conducting substrate, which characteristics make them promising candidates for various optoelectronic and energy applications including photovoltaic cells.
ZnO Nanowire Field Emitter Arrays: Fabrication, Field Emission Mechanism and Applications

Jun Chen,Zhipeng Zhang,Guofu Zhang,Long Zhao,Yicong Chen,Juncong She,Shaozhi Deng,Ningsheng Xu

DOI: https://doi.org/10.1364/pfe.2015.pt1e.2

2015-01-01

Abstract:ZnO nanowires with good field emission properties were prepared by a non-catalyst thermal oxidization method. The study of temperature dependent field emission shows that the defects play an important role in the field emission process. Addressable field emitter arrays using ZnO nanowires were fabricated and applied in a display device. Good gate-controlled characteristics and the display of video images are realized. The results demonstrate that feasibility of large area ZnO nanowire field emitter arrays.
Study on structural and optical properties of Sn-doped ZnO nanoarrays

Min WANG,Chenghua SUI,Bin LV,Yun LI

DOI: https://doi.org/10.3969/j.issn.1001-9731.2015.增刊(Ⅰ).010

2015-01-01

Abstract:ZnO nanoarrays (ZNAs)and tin-doped ZnO nanorod arrays(ZNAs∶Sn)were synthesized by hydro-thermal method on seeded catalyst layer prepared by spin coating method.The effect of Sn doping in ZnO nano-rod arrays (ZNAs)was investigated by X-ray diffraction,scanning electron microscopy,optical transmittance spectra and ellipsometer,and the Bruggeman effective medium approximation (EMA)theory was employed to model porous columnar structures of ZNAs to acquire the optical constants of our samples.Compared with the pure ZNAs,the ZNAs∶Sn have a higher transmittance at the wavelength range 300-800 nm.Calculating with the global standard spectrum (AM1.5),the 5% doped ZNAs∶Sn has the highest energy of transmission at the wavelength 300-800 nm,which is 1.6 times as the value that the pure ZNAs has.
Field Emission Properties of ZnO Nanowire Array Directly Grown from Zinc Substrate

L. H. Cai,J. Chen,S. M. Zhang,S. Z. Deng,J. C. She,N. S. Xu

DOI: https://doi.org/10.1109/ivnc.2007.4480967

2007-01-01

Abstract:ZnO nanowires were grown by direct oxidation of ZnO substrate. The field emission from ZnO nanowire has been studied. The obtained results indicated that the ZnO nanowire has good field emission properties.
Optoelectronic Properties Of Single-Crystalline Zn2geo4 Nanowires

chihung liao,chunwei huang,juiyuan chen,chunghua chiu,tzungchuen tsai,kuochang lu,mingyen lu,wenwei wu

DOI: https://doi.org/10.1021/jp500830x

2014-01-01

Abstract:In this work, Zn2GeO4 nanowires (NWs) were successfully synthesized on Si(100) substrates through carbon thermal reduction and a vapor liquid solid method. The NWs were of around 100 nm diameter and high aspect ratio (AR > 150). High-resolution transmission electron microscopy studies indicate that the NWs are single-crystalline with [110] growth direction. Moreover, the atomic resolution high-angle annular dark-field and bright-field images of scanning transmission electron microscopy have distinguished the different elements. They also further identified the structure of Zn2GeO4 and located the positions of the elements. Additionally, we have fabricated devices and measured the electrical properties of a single NW. It is remarkable that individual Zn2GeO4 NW devices exhibited excellent optoelectronic properties with fast switching speed under 254 nm UV illuminations. Furthermore, with short wavelength UV illumination, as we soaked Zn2GeO4 NWs in methyl orange solution, the methyl orange was degraded. Therefore, Zn2GeO4 NWs have potential applications in UV photodetectors and degradation of organic pollutants.
ZnO-ZnS heterojunction and ZnS nanowire arrays for electricity generation.

Ming-Yen Lu,Jinhui Song,Ming-Pei Lu,Chung-Yang Lee,Lih-Juann Chen,Zhong Lin Wang

DOI: https://doi.org/10.1021/nn800804r

IF: 17.1

2009-01-01

ACS Nano

Abstract:Vertically aligned ZnO-ZnS heterojunction nanowire (NW) arrays were synthesized by thermal evaporation in a tube furnace under controlled conditions. Both ZnO and ZnS are of wurtzite structure, and the axial heterojunctions are formed by epitaxial growth of ZnO on ZnS with an orientation relationship of [0001](ZnO)//[0001](ZnS). Vertical ZnS NW arrays have been obtained by selectively etching ZnO-ZnS NW arrays. Cathodoluminescence measurements of ZnO-ZnS NW arrays and ZnS NW arrays show emissions at 509 and 547 nm, respectively. Both types of aligned NW arrays have been applied to convert mechanical energy into electricity when they are deflected by a conductive AFM tip in contact mode. The received results are explained by the mechanism proposed for nanogenerator.
Synthesis and electrical properties of ZnO nanowires.

Xiaoyan Xing,Kaibo Zheng,Huahua Xu,Fang Fang,Haoting Shen,Jing Zhang,Jian Zhu,Chunnuan Ye,Guanying Cao,Dalin Sun,Guorong Chen

DOI: https://doi.org/10.1016/j.micron.2005.10.010

IF: 2.381

2006-01-01

Micron

Abstract:Vertically aligned ZnO nanowires were synthesized on the p+ silicon chip by modifying the CVD process with a vapor trapping design. Scanning electron microscopy was used to investigate the morphology of as-obtained nanowires. X-ray diffraction showed that the obtained nanowires were ZnO crystalline. The rectifying characteristics of the p–n heterojunction composed of ZnO nanowires and a p+ silicon chip were observed. The positive turn-on voltage was 0.5V and the reverse saturation current was 0.01mA. These vertically aligned ZnO nanowires showed a low field emission threshold of 4V/μm at a current density of 0.1μA/cm2. The dependence of emission current density on the electric field followed Fowler–Nordheim relationship.
Field Emission and Optical Properties of ZnO Nanowires Grown Directly on Conducting Brass Substrates.

Kaifu Huo,Jijiang Fu,Hongwei Ni,Yemin Hu,Guixiang Qian,Paul K. Chu,Zheng Hu

DOI: https://doi.org/10.1166/jnn.2009.ns78

2009-01-01

Journal of Nanoscience and Nanotechnology

Abstract:Large-area and uniform ZnO nanowires have been produced directly on a conducting brass substrate by annealing a Cu0.66Zn0.34 foil under a mixture of argon and oxygen. The morphology, structure, and composition of the ZnO nanowires are characterized by X-ray diffraction, electron microscopy, energy-dispersive X-ray spectrometry, and X-ray photoelectron spectroscopy. The ZnO nanowires with diameters of about 40-70 nm and lengths up to micrometers grow preferentially along the [001] direction. Since the Cu0.66Zn0.34 foil serves as both the Zn source and substrate, the synthesis and assembly of the ZnO nanowires on a conducting substrate is accomplished in one step, and good intrinsic adhesion and robust electrical contact between the ZnO nanowires and conducting substrate are realized. This ZnO configuration forms an ideal field emitter and good field emission properties are corroborated in this study. Photoluminescence studies indicate that these ZnO nanowires have good optical quality exhibiting strong ultraviolet (UV) emission at 383 nm and a weak visible emission band centered around 485 nm at room temperature. The good field emission and optical properties suggest that ZnO nanowires fabricated by this method have promising applications in nano-optoelectronic and field emission devices.
Synthesis and Electrical Properties of ZnO Nanowires

Xiaoyan Xing,Kaibo Zheng,Huahua Xu,Fang,Haoting Shen,Jing Zhang,Jian Zhu,Chunnuan Ye,Guanying Cao,Dalin Sun,Guorong Chen

DOI: https://doi.org/10.1016/j.micron.2005.10.010

IF: 2.381

2006-01-01

Micron

Abstract:Vertically aligned ZnO nanowires were synthesized on the p+ silicon chip by modifying the CVD process with a vapor trapping design. Scanning electron microscopy was used to investigate the morphology of as-obtained nanowires. X-ray diffraction showed that the obtained nanowires were ZnO crystalline. The rectifying characteristics of the p–n heterojunction composed of ZnO nanowires and a p+ silicon chip were observed. The positive turn-on voltage was 0.5 V and the reverse saturation current was 0.01 mA. These vertically aligned ZnO nanowires showed a low field emission threshold of 4 V/μm at a current density of 0.1 μA/cm2. The dependence of emission current density on the electric field followed Fowler–Nordheim relationship.
Electrical And Optical Properties Of Phosphorus-Doped P-Type Zno Films Grown By Metalorganic Chemical Vapor Deposition

X. H. Pan,J. Jiang,Y. J. Zeng,H. P. He,L. P. Zhu,Z. Z. Ye,B. H. Zhao,X. Q. Pan

DOI: https://doi.org/10.1063/1.2828017

IF: 2.877

2008-01-01

Journal of Applied Physics

Abstract:P-doped p-type ZnO thin films have been grown by metalorganic chemical vapor deposition. By modulating the P evaporating temperature, p-type conductivity can be controlled due to the different P content incorporated into the ZnO films. The P-doped p-type ZnO thin films are of high optical quality, as indicated by low-temperature photoluminescence. P-related acceptor state with an energy level of 163 meV is identified from free-to-neutral-acceptor transitions. In addition, x-ray photoelectron spectroscopy confirms that only one chemical bonding state of P exists in the P-doped ZnO thin films. (C) 2008 American Institute of Physics.
Electroluminescence from ZnO Nanowires with a P-Zno Film/n-Zno Nanowire Homojunction

H. Sun,Q. Zhang,J. Zhang,T. Deng,J. Wu

DOI: https://doi.org/10.1007/s00340-007-2900-7

2008-01-01

Applied Physics B

Abstract:ZnO homojunction light-emitting diodes based on ZnO nanowires were fabricated on Si(100) substrates. An N–In codoped p-type ZnO film grown by ultrasonic spray pyrolysis and an unintentionally doped n-type ZnO nanowire quasi-array grown by an easy low-temperature hydrothermal method were employed to form the homojunction diode. Under a forward bias larger than 8 V, electroluminescence, which was composed of an ultraviolet peak centered at 387 nm and a green band around 540 nm, was observed. The electroluminescence emission was contributed by the ZnO nanowires. The results reported here suggest that ZnO-based ultraviolet light-emitting devices could be realized at low cost.
Field Emission Properties of Indium-Doped ZnO Nanowires Prepared on ITO Glass Substrate

Yangyang Zhao,Guofu Zhang,Runze Zhan,Juncong She,Shaozhi Deng,Ningsheng Xu,Jun Chen

DOI: https://doi.org/10.1109/ivnc.2018.8520049

2018-01-01

Abstract:Doping is an important approach for improving the field emission properties of semiconductor nanowire field emitters. The indium-doped zinc oxide nanowires were prepared on ITO glass substrate by thermal oxidation method and field emission properties were measured. The prepared In-doped nanowire arrays shows excellent field emission performance with a turn-on field of 4.0 V/μm and current fluctuation of ~1.4%.
A Novel Way for Synthesizing Phosphorus-Doped Zno Nanowires

Jingyun Gao,Qing Zhao,Yanghui Sun,Guo Li,Jingmin Zhang,Dapeng Yu

DOI: https://doi.org/10.1007/s11671-010-9805-9

2010-01-01

Nanoscale Res Lett

Abstract:We developed a novel approach to synthesize phosphorus (P)-doped ZnO nanowires by directly decomposing zinc phosphate powder. The samples were demonstrated to be P-doped ZnO nanowires by using scanning electron microscopy, high-resolution transmission electron microscopy, X-ray diffraction spectra, X-ray photoelectron spectroscopy, energy dispersive spectrum, Raman spectra and photoluminescence measurements. The chemical state of P was investigated by electron energy loss spectroscopy (EELS) analyses in individual ZnO nanowires. P was found to substitute at oxygen sites (P O ), with the presence of anti-site P on Zn sites (P Zn ). P-doped ZnO nanowires were high resistance and the related P-doping mechanism was discussed by combining EELS results with electrical measurements, structure characterization and photoluminescence measurements. Our method provides an efficient way of synthesizing P-doped ZnO nanowires and the results help to understand the P-doping mechanism.

Electrical, Optical, and Field-Emission Properties of Phosphorus-Doped ZnO Nanowire Arrays and P-N Homojunction of ZnO nanowires

Synthetic and Effect of Annealing on the Luminescent Properties of Zno Nanowire

Phosphorus Doped Zn(1-x)Mg(x)O Nanowire Arrays.

Simulation of P-N Junction Properties of Nanowires and Nanowire Arrays

Electrical And Photoresponse Properties Of An Intramolecular P-N Homojunction In Single Phosphorus-Doped Zno Nanowires

Near UV LEDs Made with in Situ Doped P-N Homojunction ZnO Nanowire Arrays

ZnO Nanowire and $\hbox{ws}_{2}$ Nanotube Electronics

Optical and Electrical Performance Of, Sno2 Capped Zno Nanowire Arrays

Optical and Electrical Properties of Ga-Doped ZnO Nanowire Arrays on Conducting Substrates

ZnO Nanowire Field Emitter Arrays: Fabrication, Field Emission Mechanism and Applications

Study on structural and optical properties of Sn-doped ZnO nanoarrays

Field Emission Properties of ZnO Nanowire Array Directly Grown from Zinc Substrate

Optoelectronic Properties Of Single-Crystalline Zn2geo4 Nanowires

ZnO-ZnS heterojunction and ZnS nanowire arrays for electricity generation.

Synthesis and electrical properties of ZnO nanowires.

Field Emission and Optical Properties of ZnO Nanowires Grown Directly on Conducting Brass Substrates.

Synthesis and Electrical Properties of ZnO Nanowires

Electrical And Optical Properties Of Phosphorus-Doped P-Type Zno Films Grown By Metalorganic Chemical Vapor Deposition

Electroluminescence from ZnO Nanowires with a P-Zno Film/n-Zno Nanowire Homojunction

Field Emission Properties of Indium-Doped ZnO Nanowires Prepared on ITO Glass Substrate

A Novel Way for Synthesizing Phosphorus-Doped Zno Nanowires