Electrically Driven Ultraviolet Lasing Behavior from Phosphorus-Doped P-Zno Nanonail Array/n-Si Heterojunction

Jun-Yan Zhang,Qi-Feng Zhang,Tian-Song Deng,Jin-Lei Wu

DOI: https://doi.org/10.1063/1.3268438

IF: 4

2009-01-01

Applied Physics Letters

Abstract:Electrically driven ultraviolet lasing behavior from p-ZnO:P nanonail array/n-Si heterojunction was demonstrated. Phosphorus-doped ZnO nanonail arrays were grown by chemical vapor deposition method. The constructed heterojunction with indium tin oxide films as the contacted electrodes demonstrated clear rectifying behavior, and the turn-on voltage was about 2.5 V. The p-n junction lowered the excitation threshold effectively and the electrically driven ultraviolet lasing behavior exhibited high monochromaticity: when the applied forward current reached 24 mA, distinct ultraviolet laser emission peaks were obtained at room temperature, and the full width at half maxims were 0.7, 0.9, and 0.5 nm, respectively. The three sharp peaks represented different lasing modes.