Abstract:Electrically pumped ultraviolet random lasing was achieved in metal-insulator-semiconductor (MIS) diodes based on ZnO films at room temperature. The ZnO films were grown by plasma assisted molecular beam epitaxy. Two different kinds of insulator layers, SiO x (0<x≤2) and AlO x (0<x≤1.5) were deposited by electron beam evaporation. X-ray diffraction experiments found these oxide layers were amorphous (or microcrystals), and X-ray photoelectron spectroscopy confirmed the Si and Al were fully oxidized. Compared with devices using SiO x as the insulator layer, diodes with evaporated AlO x layers showed a lower working threshold forward current (∼20 mA to ∼26 mA) and higher emission intensity. Periodic features indicating formation of closed-loop paths were deduced by the power Fourier transform of electroluminescence spectra. The cavity length of both devices increased as forward currents increased, while a larger cavity length was always obtained in the AlO x -involved device under the same working current. The improved performance was attributed to larger hole amount in AlO x layers. These results revealed that evaporated AlO x can serve as good electron blocking and hole supplying layers for hetero-structures.

Electrically Pumped Ultraviolet Random Lasing from ZnO-based Metal-Insulator-semiconductor Devices: Dependence on Carrier Transport

Electrically pumped wavelength-tunable ultraviolet random lasing from MgxZn1-xO films on Si

Electrically Pumped ZnO Film Ultraviolet Random Lasers on Silicon Substrate

Electrically Pumped Random Lasing from ZnO Materials

Electrically Pumped Ultraviolet Random Lasing from Heterostructures Formed by Bilayered Mgzno Films on Silicon

Electrically Pumped Ultraviolet Random Lasing from ZnO Films: Compensation Between Optical Gain and Light Scattering

Electrically Pumped Ultraviolet Lasing from Zno in Metal-Insulator-Semi Devices

Suppression of Randomness in Electrically Pumped Random Lasing from a ZnO Film-Based Light-Emitting Device on Silicon.

Electric-field-induced Random Lasing from ZnO and Mg0.1Zn0.9O Films Optically Pumped with an Extremely Low Intensity.

Electrically Pumped Random Lasing with an Onset Voltage of Sub-3 V from ZnO-based Light-Emitting Devices Featuring Nanometer-Thick MoO3 Interlayers.

347 Nm Ultraviolet Electroluminescence from MgxZn1−xO-based Light Emitting Devices

Electrically Pumped Random Lasing in Zno-Based Metal-Insulator-Semiconductor Structured Devices: Effect of Zno Film Thickness

Low-threshold Electrically Pumped Ultraviolet Random Lasing from ZnO Film Prepared by Pulsed Laser Deposition?

Evolution From Random Lasing To Erbium-Related Electroluminescence From Metal-Insulator-Semiconductor Structured Light-Emitting Device With Erbium-Doped Zno Film On Silicon

Ultraviolet Light Emissions From N-2 Microplasma Electrically Induced By Metal-Insulator-Semiconductor Devices

Electrically Pumped Random Lasing from the Light-Emitting Device Based on Two-Fold-Tandem Sio2/Zno Structure

Fairly pure ultraviolet electroluminescence from p-Si-based SiOx/ZnO/SiOx double-barrier device

Electrically Pumped Random Lasing from Fto/Porous Insulator/N-Zno/P(+)-Si Devices

Fairly Pure Ultraviolet Electroluminescence from Zno-Based Light-Emitting Devices

A Chemical Strategy to Reinforce Electrically Pumped Ultraviolet Random Lasing from ZnO Films

Remarkable Decrease in Threshold for Electrically Pumped Random Ultraviolet Lasing from ZnO Film by Incorporation of Zn2TiO4 Nanoparticles.