Abstract:Mg x Zn 1 − x O (x≈0.19) films were, respectively, deposited by reactive sputtering on the heavily arsenic-doped (n+), lightly phosphorus-doped (n−), heavily boron-doped (p+), and lightly boron-doped (p−) silicon substrates. The sputtered MgxZn1−xO films were n-type with an electron concentration of 4.1×1017cm−3. Moreover, the energy-band gap of the MgxZn1−xO films was determined to be ∼3.67eV. The MgxZn1−xO∕n−-Si and MgxZn1−xO∕p−-Si heterojunctions showed rectifying behavior to different degrees while the MgxZn1−xO∕n+-Si and MgxZn1−xO∕p+-Si heterojunctions did not possess rectifying function. The MgxZn1−xO∕n+-Si heterojunction exhibited UV near-band-edge and visible defect-related electroluminescence (EL) under the forward bias but only visible EL under reverse bias; while the MgxZn1−xO∕n−-Si heterojunction only emitted relatively weak UV and visible EL under the forward bias. On the other hand, the MgxZn1−xO∕p+-Si heterojunction was electroluminescent in the visible region under the forward bias while in both the UV and visible regions under the reverse bias; and the MgxZn1−xO∕p−-Si heterojunction did not exhibit detectable EL under either forward or reverse bias. The mechanisms of the EL and carrier transport for the above-mentioned heterojunctions have been tentatively explained in terms of their energy-band structures.

Electrically Pumped Ultraviolet Random Lasing from Heterostructures Formed by Bilayered Mgzno Films on Silicon

Electrically Pumped Ultraviolet Random Lasing from ZnO Films: Compensation Between Optical Gain and Light Scattering

Electrically pumped wavelength-tunable ultraviolet random lasing from MgxZn1-xO films on Si

Electric-field-induced Random Lasing from ZnO and Mg0.1Zn0.9O Films Optically Pumped with an Extremely Low Intensity.

Electrically Pumped ZnO Film Ultraviolet Random Lasers on Silicon Substrate

Electrically Pumped Random Lasing with an Onset Voltage of Sub-3 V from ZnO-based Light-Emitting Devices Featuring Nanometer-Thick MoO3 Interlayers.

Electrically Pumped Random Lasing from ZnO Materials

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Electrically Pumped Random Lasing from the Light-Emitting Device Based on Two-Fold-Tandem Sio2/Zno Structure

Suppression of Randomness in Electrically Pumped Random Lasing from a ZnO Film-Based Light-Emitting Device on Silicon.

Electrically Pumped Random Lasing in Zno-Based Metal-Insulator-Semiconductor Structured Devices: Effect of Zno Film Thickness

Electrically Pumped Simultaneous Ultraviolet and Visible Random Laser Actions from ZnO-CdO Interdiffused Film

Electrically Pumped Random Lasing from Hydrothermal Zno Films of Large Grains

Electrically Pumped Wavelength-Tunable Blue Random Lasing from Cdzno Films on Silicon

Evolution From Random Lasing To Erbium-Related Electroluminescence From Metal-Insulator-Semiconductor Structured Light-Emitting Device With Erbium-Doped Zno Film On Silicon

Electroluminescent and Carrier Transport Mechanisms of MgxZn1−xO∕Si Heterojunctions

Optically and Electrically Pumped Random Lasing from ZnO Films Annealed at Different Temperatures

Low-threshold Electrically Pumped Ultraviolet Random Lasing from ZnO Film Prepared by Pulsed Laser Deposition?

Comparison on Electrically Pumped Random Laser Actions of Hydrothermal and Sputtered ZnO Films

347 Nm Ultraviolet Electroluminescence from MgxZn1−xO-based Light Emitting Devices

Electrically Pumped Ultraviolet Lasing from Zno in Metal-Insulator-Semi Devices