Abstract:We have prepared ZnO films with similar to 700 nm sized grains on silicon substrates by a simple hydrothermal process. Then, metal-insulator-semiconductor (MIS) structured devices based on such ZnO films have been fabricated in order to achieve low-threshold electrically pumped random lasing (RL). It is found that the MIS structured device using the as-grown hydrothermal ZnO film exhibits a lower RL threshold current than most of our previously reported devices using the sputtered or hydrothermal ZnO films of much smaller grains, indicating the feasibility of using ZnO films of large grains to improve the RL performance. However, the RL threshold current of the MIS structured device using the hydrothermal ZnO film subjected to 700 degrees C anneal is unexpectedly 10 times that of the device using the as-grown hydrothermal ZnO film. This is due to that the 700 degrees C anneal results in deep pores and more defects in the hydrothermal ZnO film, which in turn leads to not only the larger optical loss but also the smaller optical gain. Such an unexpected result suggests that the poor thermal-endurance of the present hydrothermal ZnO films significantly limits their applications into random lasers. (C) 2015 Elsevier B.V. All rights reserved.

Comparison on Electrically Pumped Random Laser Actions of Hydrothermal and Sputtered ZnO Films

Electrically Pumped Random Lasing from Hydrothermal Zno Films of Large Grains

Optically and Electrically Pumped Random Lasing from ZnO Films Annealed at Different Temperatures

Electrically Pumped Ultraviolet Random Lasing from ZnO Films: Compensation Between Optical Gain and Light Scattering

Electrically Pumped Random Lasing in Zno-Based Metal-Insulator-Semiconductor Structured Devices: Effect of Zno Film Thickness

Low-threshold Electrically Pumped Ultraviolet Random Lasing from ZnO Film Prepared by Pulsed Laser Deposition?

Electrically Pumped Random Lasing from the Light-Emitting Device Based on Two-Fold-Tandem Sio2/Zno Structure

Electrically Pumped Random Lasing from ZnO Materials

Electrically Pumped Random Lasing with an Onset Voltage of Sub-3 V from ZnO-based Light-Emitting Devices Featuring Nanometer-Thick MoO3 Interlayers.

Suppression of Randomness in Electrically Pumped Random Lasing from a ZnO Film-Based Light-Emitting Device on Silicon.

Remarkable Decrease in Threshold for Electrically Pumped Random Ultraviolet Lasing from ZnO Film by Incorporation of Zn2TiO4 Nanoparticles.

Electric-field-induced Random Lasing from ZnO and Mg0.1Zn0.9O Films Optically Pumped with an Extremely Low Intensity.

Electrically Pumped ZnO Film Ultraviolet Random Lasers on Silicon Substrate

Electrically Pumped Ultraviolet Random Lasing from Heterostructures Formed by Bilayered Mgzno Films on Silicon

Electrically Pumped Simultaneous Ultraviolet and Visible Random Laser Actions from ZnO-CdO Interdiffused Film

A Chemical Strategy to Reinforce Electrically Pumped Ultraviolet Random Lasing from ZnO Films

Electrically Pumped Ultraviolet Random Lasing from ZnO-based Metal-Insulator-semiconductor Devices: Dependence on Carrier Transport

Electrically Pumped Random Lasing from Fto/Porous Insulator/N-Zno/P(+)-Si Devices

Flexible Electrically Pumped Random Lasing from ZnO Nanowires Based on Metal–insulator–semiconductor Structure

Evolution From Random Lasing To Erbium-Related Electroluminescence From Metal-Insulator-Semiconductor Structured Light-Emitting Device With Erbium-Doped Zno Film On Silicon

Electrically Pumped Wavelength-Tunable Blue Random Lasing from Cdzno Films on Silicon