Indium-Doped Zno Nanowires with Infrequent Growth Orientation, Rough Surfaces and Low-Density Surface Traps

Hongfeng Duan,Haiping He,Luwei Sun,Shiyan Song,Zhizhen Ye
DOI: https://doi.org/10.1186/1556-276x-8-493
2013-01-01
Nanoscale Research Letters
Abstract:Indium-doped ZnO nanowires have been prepared by vapor transport deposition. With increasing In content, the growth orientation of the nanowires switches from [100] to infrequent [023] and the surface becomes rough. No surface-related exciton emission is observed in these nanowires. The results indicate that large surface-to-volume ratio, high free electron concentration, and low density of surface traps can be achieved simultaneously in ZnO nanowires via In doping. These unique properties make In-doped ZnO nanowire a potential material for photocatalysis application, which is demonstrated by the enhanced photocatalytic degradation of Rhodamine B.
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