Self‐Assembly and the Properties of a Highly Oriented Hierarchical Nanobelt–Nanoprism Array of Ternary Oxide Zn–In–O
Nan Pan,Haizhou Xue,Jinhua Huang,Guanghui Zhang,Yukun Wu,Ming Li,Xiaoping Wang,Jianguo Hou
DOI: https://doi.org/10.1002/ejic.201000465
IF: 2.551
2010-01-01
European Journal of Inorganic Chemistry
Abstract:A highly oriented, well-aligned hierarchical Zn-In-O nanobelt-nanoprism array was synthesized by vapor-phase transport and condensation using GaN epilayer as the substrate. The upper nanobelts are found to be ZnO:In with an average Zn/In molar ratio of approximately 9:1, and the subjacent nanoprisms are found to be In2O3(ZnO)(m) (m = 2, 3, 4, and 5) structures. During self-assembly, the nanoprisms are vertically grown on GaN and well aligned along the superlattice stacking direction, upon which each nanobelt is horizontally grown along its [10-10] direction. The spatially resolved cathodoluminescence spectra collected on individual hierarchical nanostructures clearly show characteristics for the ZnO:In nanobelt and for the In2O3(ZnO)(m) nanoprism, which are distinctly different from the emissions of the undoped ZnO nanorod. I-V measurements on individual nanobelts reveal good conductivity over 10(3) Sm-1 and high electron concentration of 10(19)-10(20) cm(-3). This bottom-up self-assembled, highly oriented, and well-aligned hierarchical nanoarray may find applications in newly emerging vertically integrated nanoarray circuits.