Improvement of structural, optical and electrical properties of indium-doped ZnO nanoparticles synthesized by Co-precipitation method

Junlabhut, Prasopporn

DOI: https://doi.org/10.1007/s10854-022-09418-9

2023-01-08

Abstract:Indium-doped ZnO nanoparticles were synthesized by co-precipitation method using zinc nitrate hexahydrate and Indium (III) nitrate hydrate as precursor. Co-precipitation of indium-doped ZnO with various indium dopant concentrations 0–5 wt.% were obtained by calcination process at 500 °C for 2 h. The effects of indium additive in ZnO host lattice on structural, optical and electrical properties have been investigated by X-ray diffraction (XRD), Scanning electron microscopy (FE-SEM), Energy Dispersive Spectroscopy (EDS), Diffuse Reflectance Spectroscopy (DRS) and four-point probe. XRD results reveal that all Indium-doped ZnO nanoparticles have a single phase hexagonal wurtzite structure. The position of the main diffraction peak of ZnO shifted slightly toward small angle with grain size from 210 to 430 nm. SEM images indicated that the dopant of indium affected the surface morphology of ZnO nanoparticles. The incorporation of indium ions up to 4–5 wt.% reveals that ZnO host matrix can be transformed into the rod-like structure. The element composition in weight percentage of Zn, O and In were presented using EDS element mapping analysis. The results confirmed that the incorporation of indium is doped into the ZnO host matrix with a quite uniform distribution. The optical properties were examined by DRS. The optical transmittance decreases when the indium dopant increases. The absorption band edges also moved toward the longer wavelength as increasing the indium additives. The results indicated that the incorporation of In 3+ ions replaces Zn 2+ ions in host ZnO led to an increase in the defects inside ZnO. The calculated bandgap indium-doped ZnO decreased from 3.01 to 2.86 eV when indium dopant increased from 0 to 5 wt.%. The sheet resistance of indium-doped ZnO was observed by four-point probe measurement in room temperature. The electrical transport results suggested that n-doped by incorporation of 3 wt.% significantly affected the good conducting formation of ZnO.