Abstract:Pre-growth preparation of the Si(001) clean surface is a key process for Ge/Si UHV MBE. It usually includes pre-cleaning by liquid etchants, thermal pretreatment in UHV and removal of SiO2 or a different protective coat prior to MBE. Chemical pre-cleaning usually results in formation of the thin SiO2 film or the surface passivated by H. Depending on chemical pretreatment different purification processes are applied to prepare the clean surface in UHV. A structure of the Si(001) surface which may affect MBE was studied by STM and RHEED. Experiments were carried out in UHV using the Riber SSC2 instrument coupled with GPI-300 STM. Si wafers were either etched beforehand in the solutions of RCA or HF and HNO3 mixture or passivated in the HF solutions. The (2x1) reconstruction was found to mainly arise in UHV after deoxidization processes such as high-temperature annealing or SiO2 removal by a weak flux of Si. The c(8x8) structure was also often observed by STM at room temperature and found to occupy whole surface or a part of it depending on sample cooling rate and chemical pretreatment. The c(8x8) structure observed by STM was evidenced to correspond to (4x4) one in the RHEED patterns; the later replaced (2x1) when the samples were cooled below 600C and turned out to be reversible with the transition point of ~600C. A structural model of the c(8x8) surface and a pathway of its formation in assumption of surface stress field self ordering are proposed.

Surface And Interface Study Of U/Si (111)

Surface and interface study of U/Si (1 1 1)

Formation of Two-Dimensional Uranium Silicide Film and Its Electronic Structure Study

Study Of The Na-Si(111) 3x1 Interface Using Core-Level Photoemission Spectroscopy

Growth of Zirconium Silicide Nanostructures on Vicinal and Flat Si(111)-7 × 7 Surfaces

Formation of the Schottky Barrier at (3 × 1)na/si(111) Surface

Study of Si and Ge growth on Si(100) surface

STM Study of Si(337) Surface

Phase transition on the Si(001) clean surface prepared in UHV MBE chamber: A study by high resolution STM and in situ RHEED

Identifying Atomic Geometry And Electronic Structure Of (2 X 3)-Sr/Si(100) Surface And Its Initial Oxidation

Identifying atomic geometry and electronic structure of (2×3)-Sr/Si(100) surface and its initial oxidation

Nanofaceting of unit cells and temperature dependence of the surface reconstruction and morphology of Si(105) and (103)

Photoemission Study of the Initial Stage of Er/Si(100) Interface Formation

Interfacial Bonding and Structure of Bi2te3 Topological Insulator Films on Si(111) Determined by Surface X-Ray Scattering

Atomic Structure Of The Si(112) 7x1-In Surface

Si(313) 12 X 1: Another Metallic Stable Surface Of Silicon Having A Complex Reconstructed Layer

Epitaxial Growth of the Heavy-Fermion UCu5 (111) Film on the Cu (111) Substrate and Its Electronic Structure Study

Structural modification in Au/Si(100) system: Role of surface oxide and vacuum level

STM and RHEED study of the Si(001)-c(8x8) surface

Surface structures of erbium silicide ultra-thin films formed by solid phase epitaxy on Si(100)

Epitaxial growth of Si thin films with hexagonal close-packed structures on metal substrates